PHEMT* Low Noise Amplifier
with Bypass Switch
Technical Data
MGA-72543
Features
•Operating Frequency
0.1 GHz ~ 6.0 GHz
•Noise Figure:
1.4 dB at 2 GHz
•Gain: 14 dB at 2 GHz
•Bypass Switch on Chip
Loss = -2.5 dB (Id < 5 µA)
IIP3 = +35 dBm
•Adjustable Input IP3
+2 to +14 dBm
•2.7 V to 4.2 V Operation
•Very Small Surface Mount
Package
Applications
•CDMA (IS-95, J-STD-008)
Receiver LNA
Transmit Driver Amp
•TDMA (IS-136) Handsets
Surface Mount Package
SOT-343 (SC-70)
Pin Connections and
Package Marking
Simplified Schematic
Description
Agilent’s MGA-72543 is an economi-
cal, easy-to-use GaAs MMIC Low
Noise Amplifier (LNA), which is
designed for an adaptive CDMA
receiver LNA and adaptive CDMA
transmit driver amplifier.
The MGA-72543 features a mini-
mum noise figure of 1.4 dB and
14 dB associated gain from a single
stage, feedback FET amplifier. The
Functional Block Diagram
output is internally matched to
50Ω. The input is optimally
internally matched for lowest noise
figure into 50Ω. The input may be
additionally externally matched for
low VSWR through the addition of
a single series inductor. When set
into the bypass mode, both input
and output are internally matched
to 50Ω.
The MGA-72543 offers an inte-
grated solution of LNA with
adjustable IIP3. The IIP3 can be
fixed to a desired current level for
the receiver’s linearity require-
ments. The LNA has a bypass
switch function, which sets the
current to zero and provides low
insertion loss. The bypass mode
also boosts dynamic range when
high level signal is being received.
For the CDMA driver amplifier
applications, the MGA-72543
provides suitable gain and linearity
to meet the ACPR requirements
when the handset transmits the
highest power. When transmitting
lower power, the MGA-72543 can
be bypassed, saving the drawing
current.
The MGA-72543 is a GaAs MMIC,
processed on Agilent’s cost effec-
tive PHEMT (Pseudomorphic High
Electron Mobility Transistor). It is
housed in the SOT343 (SC70 4-lead)
package, and is part of the Agilent
Technologies CDMAdvantage RF
chipset.
GND GND
Output
& Vd
Control
GainFET
Input
&
Vref
72x
GND
INPUT
& Vref
OUTPUT
& Vd
GND
3
4
1
2
RF OUT
SW & Bias Control
RF IN
* Pseudomorphic High
Electron Mobility Transistor
Package marking is 3 characters. The
last character represents date code.
2
MGA-72543 Absolute Maximum Ratings[1]
Absolute Maximum
Symbol Parameter Units Maximum Recommended
VdMaximum Input to V 5.5 4.2
Output Voltage
Vref Maximum Input to V +0.3 +0.1
Ground DC Voltage -5.5 -4.2
IdSupply Current mA 70 60
PdPower Dissipation[2,3] mW 300 250
Pin CW RF Input Power dBm +20 +13
TjJunction Temperature °C 170 150
TSTG Storage Temperature °C -65 to +150 -40 to +85
Thermal Resistance[2]:
θjc = 200°C/W
Notes:
1. Operation of this device in excess of
any one of these limits may cause
permanent damage.
2. Tcase = 25°C
3
MGA-72543 Electrical Specifications, TC = +25°C, ZO = 50 Ω, Id = 20 mA, Vd = 3 V, unless noted.
Symbol Parameters and Test Conditions Units Min. Typ. Max. σ
Vref test[1] f = 2.0 GHz Vd = 3.0 V (Vds = 2.5 V) Id = 20 mA V 0.37 0.51 0.65 0.035
NF test[1] f = 2.0 GHz Vd = 3.0 V (=Vds+Vc) Id = 20 mA dB 1.5 1.8 0.06
Ga test[1] f = 2.0 GHz Vd = 3.0 V (=Vds+Vc) Id = 20 mA dB 13.5 14.4 15.5 0.13
IIP3 test[1] f = 2.04 GHz Vd = 3.0 V (=Vds+Vc) Id = 20 mA dB 8.5 10.5 0.67
IL test[1] f = 2.0 GHz Vd = 3.0 V (Vds = 0 V, Vc = 3 V) Id = 0.0 mA dB 2.5 3.5 0.01
Ig test[1] f = 2.0 GHz Vd = 3.0 V (Vds = 0 V, Vc = 3 V) Id = 0.0 mA uA 2.0 2.0
NFo[2] Minimum Noise Figure f = 1.0 GHz dB 1.35
As measured in Figure 2 Test Circuit f = 1.5 GHz 1.38
(Γopt computed from s-parameter and f = 2.0 GHz 1.42 0.04
noise parameter performance as measured f = 2.5 GHz 1.45
in a 50 Ω impedance fixture) f = 4.0 GHz 1.54
f = 6.0 GHz 1.70
Ga[2] Associated Gain at NFof = 1.0 GHz dB 14.8
As measured in Figure 2 Test Circuit f = 1.5 GHz 14.2
(Γopt computed from s-parameter and f = 2.0 GHz 13.6 0.11
noise parameter performance as measured f = 2.5 GHz 13.0
in a 50 Ω impedance fixture) f = 4.0 GHz 11.2
f = 6.0 GHz 9.2
P1dB[1] Output Power at 1 dB Gain Compression Id = 0 mA dBm +15 .3
As measured in Figure 1 Test Circuit Id = 5 mA +3.2
Frequency = 2.04 GHz Id = 10 mA +8.3
Id = 20 mA +11.2 0.52
Id = 40 mA +14.9
Id = 60 mA +17.1
IIP3[1] Input Third Order Intercept Point Id = 0 mA dBm +35
As measured in Figure 1 Test Circuit Id = 5 mA +3.5
Frequency = 2.04 GHz Id = 10 mA +6.2
Id = 20 mA +10.5 0.67
Id = 40 mA +12.1
Id = 60 mA +14.8
ACP Adjacent Channel Power Rejection,
f = 2 GHz, offset = 1.25 MHz, Pout = 10 dBm Id = 30 mA dBc -55
(CDMA modulation scheme) Id = 40 mA -60
f = 800 MHz, offset = 900 KHz, Pout = 8 dBm Id = 20 mA -57
As measured in Figure 1 Test Circuit Id = 30 mA -60
RLin[1] Input Return Loss as measured in Fig. 1 f = 2.0 GHz dB 10.2 0.22
RLout[1] Output Return Loss as measured in Fig. 1 f = 2.0 GHz dB 19.5 1.1
ISOL[1] Isolation |S12|2 as measured in Fig. 2 f = 2.0 GHz dB -23.2 0.16
Notes:
1. Standard Deviation and Typical Data as measured in the test circuit in Figure 1. Data based at least 500 part sample size
and 3 wafer lots.
2. Typical data computed from s-parameter and noise parameter data measured in a 50Ω system. Data based on 40 parts
from 3 wafer lots.
Figure 1. MGA-72543 Production Test Circuit.
RF
Input
Vref
50 pF
960 pF
2.7 nH
18 nH
1000 Ω
Vd
RF
Output
72x
2
1
4
3
56 pF
56 pF
Figure 2. MGA-72543 Test Circuit for S, Noise, and
Power Parameters Over Frequency.
RF
Input
Bias Tee
Vd
RF
Output
72x
Vref
Bias
Tee
ICM Fixture
4
MGA-72543 Typical Performance,
T
C
= 25°C, Z
O
= 50, V
d
= 3 V, I
d
= 20 mA, unless stated otherwise.
All data as measured in Figure 2 test circuit (Input & Output presented to 50Ω).
1
1.2
1.4
2.2
2
1.8
1.6
01234 65
NF
(dB)
FREQUENCY (GHz)
Figure 3. Minimum Noise Figure vs.
Frequency and Voltage.
2.7V
3.0V
3.3V -3
0
3
18
15
12
9
6
01234 65
G
a
(dB)
FREQUENCY (GHz)
Figure 4. Associated Gain with Fmin
vs. Frequency and Voltage.
2.7V
3.0V
3.3V -3
0
3
18
15
12
9
6
01234 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 5. Input Third Order Intercept
Point vs. Frequency and Voltage.
2.7V
3.0V
3.3V
1
1.2
1.4
2.2
2
1.8
1.6
01234 65
NF
(dB)
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs.
Frequency and Temperature.
-40°C
+22°C
+85°C
-3
0
3
18
15
12
9
6
01234 65
G
a
(dB)
FREQUENCY (GHz)
Figure 7. Associated Gain with Fmin
vs. Frequency and Temperature.
-40°C
+22°C
+85°C
-3
0
3
18
15
12
9
6
01234 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 8. Input Third Order Intercept
Point vs. Frequency and Temperature.
-40°C
+25°C
+85°C
1
2
5
4
3
01234 65
VSWR
(LNA)
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR
vs. Frequency.
In (LNA)
Out (LNA)
1
2
5
4
3
01234 65
VSWR
(Bypass Switch)
FREQUENCY (GHz)
Figure 10. LNA off (Switch on) VSWR
vs. Frequency.
In (Swt)
Out (Swt)
-4
-3
0
-1
-2
01234 65
INSERTION LOSS
(dB)
FREQUENCY (GHz)
Figure 11. Insertion Loss (Switch on)
vs. Frequency and Temperature.
-40°C
+25°C
+85°C
5
MGA-72543 Typical Performance,
continued, T
C
= 25°C, Z
O
= 50, V
d
= 3 V, I
d
= 20 mA, Frequency =
2 GHz, unless stated otherwise. All data as measured in Figure 2 test circuit (Input & Output presented to 50Ω).
-3
0
3
18
15
12
9
6
01234 65
1 dB COMPRESSION (dBm)
FREQUENCY (GHz)
Figure 12. Output Power at 1dB
Compression vs. Frequency and
Voltage.
2.7V
3.0V
3.3V -3
0
3
18
15
12
9
6
01234 65
1 dB COMPRESSION (dBm)
FREQUENCY (GHz)
Figure 13. Output Power at 1dB
Compression vs. Frequency and
Temperature.
-40°C
+25°C
+85°C-3
0
3
18
15
12
9
6
01234 65
INPUT IP3 (dBm)
FREQUENCY (GHz)
Figure 14. Input Third Order Intercept
Point vs. Frequency and Current.
10 mA
20 mA
40 mA
1.0
1.2
1.4
2.6
2.2
2.0
1.8
1.6
0204060 80
NF (dB)
Id CURRENT (mA)
Figure 15. Minimum Noise Figure vs.
Current and Temperature.
-40°C
+25°C
+85°C
2.4
-3
0
3
18
15
12
9
6
Ga (dBm)
Id CURRENT (mA)
Figure 16. Associated Gain (Fmin)
vs. Current and Temperature.
-40°C
+25°C
+85°C
02040 8060 0
3
6
21
18
15
12
9
INPUT IP3 (dBm)
Id CURRENT (mA)
Figure 17. Input Third Order Intercept
Point vs. Current and Temperature.
-40°C
+25°C
+85°C
02040 8060
-3
0
3
18
15
12
9
6
1 dB Compression (dBm)
Id CURRENT (mA)
Figure 18. Output Power at 1dB
Compression vs. Current and
Temperature.
-40°C
+25°C
+85°C
02040 8060
VSWR
Id CURRENT (mA)
Figure 19. Input and Output VSWR
and VSWR of |Γ
opt
| vs. Current.
Gamma
Input
Output
02040 8060
1
2
5
4
3
Vref (V)
Id CURRENT (mA)
Figure 20. V
ref
vs. Current and
Temperature.
02040 8060
0
0.2
1
0.6
0.8
0.4
-40°C
+25°C
+85°C
6
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 0 mA, ZO = 50Ω, Vref = 3.0 V (from S and Noise Parameters in Figure 1 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.97 -13 0.19 74 0.19 74 0.96 -16 -14.5 -0.3 -0.4 -14.2 -14.5
0.20 0.91 -25 0.34 60 0.34 60 0.86 -29 -9.3 -0.8 -1.3 -8.3 -9.3
0.30 0.84 -34 0.46 49 0.46 49 0.77 -40 -6.8 -1.5 -2.3 -5.3 -6.8
0.40 0.77 -43 0.54 40 0.54 40 0.68 -48 -5.3 -2.3 -3.3 -3.7 -5.3
0.50 0.70 -50 0.60 33 0.60 33 0.61 -54 -4.4 -3.1 -4.3 -2.8 -4.4
0.60 0.65 -54 0.64 26 0.64 26 0.54 -60 -3.8 -3.8 -5.4 -2.3 -3.8
0.70 0.59 -60 0.67 20 0.68 21 0.49 -64 -3.4 -4.6 -6.2 -2.1 -3.4
0.80 0.54 -64 0.70 16 0.70 16 0.45 -67 -3.1 -5.3 -6.9 -2.0 -3.1
0.90 0.50 -67 0.71 12 0.72 12 0.42 -70 -2.9 -6.0 -7.6 -1.9 -2.9
1.00 0.47 -71 0.73 8 0.73 8 0.39 -73 -2.7 -6.6 -8.2 -1.8 -2.7
1.10 0.44 -73 0.74 4 0.74 4 0.36 -75 -2.6 -7.1 -8.8 -1.8 -2.6
1.20 0.41 -76 0.75 1 0.75 1 0.34 -77 -2.5 -7.7 -9.3 -1.8 -2.5
1.30 0.39 -78 0.76 -2 0.76 -2 0.33 -80 -2.4 -8.1 -9.8 -1.8 -2.4
1.40 0.37 -80 0.76 -5 0.76 -4 0.31 -82 -2.4 -8.6 -10.2 -1.8 -2.4
1.50 0.35 -82 0.77 -7 0.77 -7 0.29 -83 -2.3 -9.0 -10.6 -1.8 -2.3
1.60 0.34 -84 0.77 -10 0.77 -10 0.28 -85 -2.2 -9.4 -11.1 -1.8 -2.3
1.70 0.32 -86 0.77 -12 0.77 -12 0.27 -86 -2.3 -9.8 -11.5 -1.8 -2.3
1.80 0.31 -87 0.77 -15 0.77 -14 0.26 -88 -2.2 -10.2 -11.8 -1.8 -2.2
1.90 0.30 -89 0.78 -17 0.78 -17 0.25 -89 -2.2 -10.6 -12.2 -1.8 -2.2
2.00 0.28 -90 0.78 -19 0.78 -19 0.24 -90 -2.2 -10.9 -12.6 -1.8 -2.2
2.10 0.27 -92 0.78 -21 0.78 -21 0.23 -92 -2.2 -11.2 -12.9 -1.8 -2.2
2.20 0.26 -93 0.78 -23 0.78 -23 0.22 -93 -2.1 -11.5 -13.3 -1.8 -2.1
2.30 0.26 -94 0.78 -25 0.78 -25 0.21 -94 -2.1 -11.8 -13.7 -1.8 -2.1
2.40 0.25 -95 0.78 -27 0.78 -27 0.20 -96 -2.1 -12.1 -14.0 -1.9 -2.1
2.50 0.24 -96 0.78 -29 0.79 -29 0.19 -97 -2.1 -12.4 -14.4 -1.9 -2.0
2.60 0.23 -98 0.79 -31 0.79 -31 0.18 -98 -2.1 -12.7 -14.8 -1.9 -2.1
2.70 0.23 -99 0.79 -33 0.79 -33 0.17 -100 -2.1 -12.9 -15.2 -1.9 -2.1
2.80 0.22 -99 0.79 -35 0.79 -35 0.17 -101 -2.1 -13.2 -15.5 -1.9 -2.1
2.90 0.21 -100 0.79 -37 0.79 -37 0.16 -103 -2.1 -13.4 -15.9 -1.9 -2.1
3.00 0.21 -101 0.79 -39 0.79 -39 0.15 -104 -2.1 -13.7 -16.3 -1.9 -2.1
3.10 0.20 -102 0.79 -41 0.79 -41 0.15 -106 -2.1 -13.9 -16.7 -1.9 -2.1
3.20 0.20 -103 0.79 -43 0.79 -43 0.14 -108 -2.1 -14.1 -17.1 -1.9 -2.1
3.30 0.19 -104 0.79 -45 0.79 -45 0.13 -110 -2.1 -14.3 -17.5 -1.9 -2.1
3.40 0.19 -105 0.79 -47 0.79 -47 0.13 -111 -2.1 -14.5 -17.9 -1.9 -2.1
3.50 0.19 -106 0.79 -49 0.79 -49 0.12 -113 -2.1 -14.7 -18.2 -1.9 -2.1
3.60 0.18 -107 0.79 -51 0.79 -50 0.12 -115 -2.1 -14.8 -18.6 -1.9 -2.1
3.70 0.18 -108 0.79 -52 0.79 -52 0.11 -117 -2.1 -14.9 -18.9 -1.9 -2.1
3.80 0.18 -110 0.79 -54 0.79 -54 0.11 -120 -2.1 -15.0 -19.1 -1.9 -2.1
3.90 0.18 -112 0.79 -56 0.79 -56 0.11 -122 -2.1 -15.1 -19.4 -1.9 -2.1
4.00 0.17 -113 0.79 -58 0.79 -58 0.10 -124 -2.1 -15.1 -19.6 -1.9 -2.1
4.50 0.17 -123 0.79 -67 0.79 -67 0.01 -138 -2.0 -15.3 -20.1 -2.0 -2.1
5.00 0.18 -136 0.78 -77 0.78 -77 0.10 -150 -2.2 -15.1 -19.7 -2.0 -2.2
5.50 0.19 -149 0.78 -86 0.77 -86 0.12 -161 -2.2 -14.6 -18.7 -2.1 -2.2
6.00 0.16 -176 0.77 -95 0.77 -95 0.13 -178 -2.3 -15.8 -18.1 -2.2 -2.3
6.50 0.20 175 0.76 -105 0.76 -105 0.13 170 -2.4 -13.8 -17.8 -2.2 -2.4
7.00 0.23 171 0.75 -115 0.75 -115 0.13 160 -2.5 -12.8 -17.7 -2.3 -2.5
7.50 0.24 164 0.74 -125 0.74 -125 0.13 150 -2.6 -12.3 -17.5 -2.4 -2.6
8.00 0.25 154 0.73 -135 0.73 -135 0.14 137 -2.8 -12.0 -17.1 -2.5 -2.8
8.50 0.26 142 0.71 -146 0.71 -146 0.16 121 -2.9 -11.8 -16.2 -2.6 -2.9
9.00 0.27 125 0.70 -157 0.70 -157 0.19 104 -3.2 -11.3 -14.4 -2.8 -3.2
7
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 5 mA, ZO = 50 Ω, Vref = 0.7 V (from S and Noise Parameters in Figure 2 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.82 -9 4.01 174 0.05 19 0.60 -8 12.1 1.7 4.5 14.6 -26.2
0.50 0.78 -24 3.83 161 0.05 13 0.58 -15 11.7 2.1 4.8 13.9 -25.4
0.80 0.76 -34 3.70 151 0.06 15 0.56 -23 11.4 2.4 5.0 13.6 -24.8
0.90 0.75 -38 3.65 148 0.06 16 0.56 -26 11.3 2.5 5.0 13.4 -24.6
1.00 0.74 -41 3.61 145 0.06 17 0.56 -28 11.2 2.6 5.0 13.2 -24.4
1.10 0.73 -45 3.57 142 0.06 18 0.56 -30 11.1 2.7 5.1 13.1 -24.2
1.20 0.72 -48 3.52 139 0.06 18 0.56 -32 10.9 2.8 5.1 12.9 -23.9
1.30 0.72 -51 3.48 136 0.07 18 0.55 -35 10.8 2.9 5.2 12.8 -23.7
1.40 0.71 -54 3.45 133 0.07 19 0.55 -37 10.7 3.0 5.2 12.6 -23.4
1.50 0.70 -58 3.40 130 0.07 19 0.55 -39 10.6 3.1 5.2 12.5 -23.2
1.60 0.69 -61 3.36 127 0.07 19 0.54 -42 10.5 3.2 5.3 12.3 -23.0
1.70 0.69 -64 3.32 124 0.07 18 0.54 -44 10.4 3.3 5.4 12.2 -22.7
1.80 0.68 -67 3.29 121 0.07 18 0.54 -45 10.3 3.4 5.4 12.1 -22.5
1.90 0.67 -70 3.25 119 0.08 18 0.53 -47 10.2 3.5 5.5 11.9 -22.3
2.00 0.66 -73 3.22 116 0.08 17 0.53 -49 10.1 3.6 5.5 11.8 -22.1
2.10 0.66 -76 3.18 113 0.08 17 0.53 -51 10.1 3.7 5.6 11.7 -21.9
2.20 0.65 -79 3.15 111 0.08 16 0.52 -53 10.0 3.8 5.6 11.5 -21.7
2.30 0.64 -82 3.12 108 0.08 16 0.52 -55 9.9 3.9 5.7 11.4 -21.5
2.40 0.63 -85 3.08 105 0.09 15 0.51 -57 9.8 4.0 5.8 11.3 -21.3
2.50 0.63 -88 3.06 103 0.09 15 0.51 -59 9.7 4.0 5.9 11.2 -21.1
3.00 0.59 -103 2.92 90 0.01 11 0.48 -69 9.3 4.5 6.4 10.7 -20.3
3.50 0.56 -118 2.80 77 0.10 7 0.44 -80 8.9 5.0 7.1 10.2 -19.7
4.00 0.53 -138 2.65 62 0.11 1 0.40 -94 8.4 5.5 7.9 9.6 -19.1
4.50 0.51 -152 2.55 52 0.12 -3 0.38 -104 8.1 5.8 8.4 9.2 -18.7
5.00 0.50 -169 2.42 40 0.12 -9 0.36 -117 7.7 6.0 8.9 8.8 -18.3
5.50 0.49 176 2.30 28 0.12 -13 0.34 -129 7.2 6.1 9.3 8.3 -18.1
6.00 0.49 160 2.18 18 0.13 -17 0.32 -142 6.8 6.1 9.8 7.8 -17.8
6.50 0.50 148 2.07 7 0.13 -23 0.31 -154 6.3 6.0 10.1 7.5 -17.5
7.00 0.49 136 1.97 -4 0.14 -28 0.29 -165 5.9 6.2 10.7 7.0 -17.3
7.50 0.47 123 1.89 -15 0.14 -32 0.28 -176 5.5 6.5 11.2 6.6 -17.1
8.00 0.47 109 1.82 -26 0.15 -37 0.26 171 5.2 6.5 11.8 6.3 -16.6
Freq. NF
min
Γ
opt
R
n
/Z
o
G
a
|Γ
opt
|RL R
n
P
1dB
OIP
3
IIP
3
(GHz) (dB) Mag Ang (dB) (dB) (
Ω
) (dBm) (dBm) (dBm)
0.80 1.58 0.59 31 0.34 12.53 4.60 17.20 3.4 13.0 3.0
0.90 1.46 0.53 33 0.34 12.19 5.47 16.84 3.3 12.9 3.2
1.00 1.43 0.46 37 0.32 11.84 6.74 16.09 3.2 12.8 3.3
1.50 1.57 0.33 47 0.30 10.97 9.67 14.94 3.2 12.4 3.4
1.80 1.67 0.31 55 0.30 10.64 10.17 14.78 3.2 11.9 3.5
1.90 1.66 0.31 58 0.29 10.53 10.31 14.35 3.3 11.8 3.5
2.00 1.68 0.29 60 0.28 10.42 10.62 14.04 3.2 12.7 3.5
2.10 1.69 0.29 62 0.28 10.33 10.62 13.96 3.3 12.7 3.5
2.20 1.72 0.29 66 0.27 10.23 10.90 13.63 3.3 12.8 3.5
2.30 1.73 0.27 69 0.27 10.12 11.23 13.29 3.4 12.8 3.7
2.40 1.74 0.28 71 0.26 10.03 11.13 13.12 3.4 12.9 3.8
2.50 1.74 0.27 74 0.26 9.95 11.22 12.83 3.5 12.9 3.9
3.00 1.78 0.25 87 0.24 9.53 11.95 11.80 3.4 12.9 4.1
3.50 1.80 0.23 103 0.21 9.13 12.60 10.44 3.3 13.0 4.1
4.00 1.83 0.22 121 0.18 8.74 13.01 9.14 3.1 13.3 4.2
4.50 1.87 0.21 143 0.16 8.31 13.41 8.06 2.4 13.6 4.5
5.00 1.87 0.22 164 0.15 7.87 13.12 7.28 2.3 14.0 4.8
5.50 1.94 0.23 -179 0.14 7.45 12.61 7.13 2.4 14.5 6.8
6.00 1.94 0.26 -150 0.15 7.04 11.76 7.67 2.0 14.2 7.5
8
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 10 mA, ZO = 50 Ω, Vref = 0.6 V (from S and Noise Parameters in Figure 2 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.79 -10 5.30 173 0.05 19 0.49 -9 14.5 2.1 6.3 17.3 -26.9
0.50 0.74 -26 5.04 160 0.05 13 0.47 -17 14.0 2.6 6.6 16.5 -26.2
0.80 0.72 -37 4.84 150 0.05 15 0.45 -24 13.7 2.9 6.9 16.0 -25.7
0.90 0.71 -40 4.77 146 0.05 16 0.45 -27 13.6 3.0 6.9 15.8 -25.5
1.00 0.70 -44 4.71 143 0.05 17 0.45 -29 13.5 3.2 6.9 15.6 -25.3
1.10 0.69 -47 4.64 140 0.06 17 0.45 -31 13.3 3.2 6.9 15.4 -25.0
1.20 0.68 -51 4.58 137 0.06 18 0.45 -33 13.2 3.4 7.0 15.2 -24.8
1.30 0.67 -54 4.51 134 0.06 18 0.45 -36 13.1 3.4 7.0 15.1 -24.6
1.40 0.66 -58 4.45 131 0.06 19 0.44 -38 13.0 3.6 7.1 14.9 -24.3
1.50 0.66 -61 4.39 128 0.06 19 0.44 -40 12.8 3.7 7.1 14.7 -24.1
1.60 0.65 -65 4.33 125 0.06 19 0.44 -42 12.7 3.8 7.2 14.5 -23.9
1.70 0.64 -68 4.27 122 0.07 19 0.43 -44 12.6 3.9 7.3 14.3 -23.7
1.80 0.63 -71 4.21 119 0.07 18 0.43 -46 12.5 4.0 7.3 14.2 -23.5
1.90 0.62 -74 4.15 116 0.07 18 0.43 -48 12.4 4.2 7.4 14.0 -23.3
2.00 0.61 -77 4.01 113 0.07 18 0.42 -50 12.3 4.3 7.5 13.8 -23.1
2.10 0.60 -81 4.04 111 0.07 18 0.42 -52 12.1 4.4 7.5 13.7 -22.9
2.20 0.59 -84 3.99 108 0.07 17 0.42 -54 12.0 4.5 7.6 13.5 -22.7
2.30 0.59 -87 3.94 105 0.07 17 0.41 -55 11.9 4.6 7.7 13.4 -22.5
2.40 0.58 -90 3.89 103 0.08 16 0.41 -57 11.8 4.7 7.8 13.2 -22.4
2.50 0.57 -93 3.84 100 0.08 16 0.40 -59 11.7 4.8 7.9 13.1 -22.2
3.00 0.54 -108 3.62 87 0.08 13 0.37 -69 11.2 5.4 8.6 12.4 -21.5
3.50 0.50 -124 3.42 75 0.09 9 0.34 -79 10.7 6.0 9.3 11.8 -20.8
4.00 0.48 -141 3.23 62 0.01 6 0.31 -90 10.2 6.4 10.1 11.2 -20.3
4.50 0.46 -158 3.05 50 0.10 2 0.29 -103 9.7 6.8 10.8 10.6 -19.8
5.00 0.45 -175 2.88 38 0.11 -3 0.27 -115 9.2 6.9 11.5 10.1 -19.4
5.50 0.45 170 2.72 27 0.11 -6 0.26 -128 8.7 7.0 11.8 9.6 -19.0
6.00 0.45 154 2.57 17 0.12 -10 0.24 -141 8.2 6.9 12.3 9.1 -18.6
6.50 0.46 142 2.43 6 0.12 -14 0.24 -154 7.7 6.7 12.5 8.7 -18.2
7.00 0.45 131 2.31 -5 0.13 -19 0.22 -165 7.3 6.9 13.0 8.2 -17.9
7.50 0.44 119 2.21 -16 0.14 -23 0.21 -176 6.9 7.2 13.5 7.8 -17.4
8.00 0.44 105 2.12 0 0.15 -28 0.20 169 6.6 7.1 14.0 7.5 -16.7
Freq. NF
min
Γ
opt
R
n
/Z
o
G
a
|Γ
opt
|RL R
n
P
1dB
OIP
3
IIP
3
(GHz) (dB) Mag Ang (dB) (dB) (
Ω
) (dBm) (dBm) (dBm)
0.80 1.33 0.45 37 0.23 14.45 6.96 11.52 9.3 17.9 4.1
0.90 1.33 0.43 37 0.24 14.27 7.27 11.84 9.3 17.8 4.2
1.00 1.34 0.38 42 0.24 14.00 8.30 12.24 9.3 17.7 4.3
1.50 1.41 0.27 51 0.24 13.10 11.42 11.94 8.8 17.5 5.0
1.80 1.44 0.25 56 0.23 12.71 11.95 11.35 8.5 17.4 5.1
1.90 1.45 0.25 60 0.22 12.58 12.21 11.02 8.4 17.2 5.2
2.00 1.47 0.23 62 0.22 12.45 12.58 10.85 8.3 17.3 5.2
2.10 1.47 0.23 66 0.21 12.32 12.66 10.66 8.3 17.5 4.5
2.20 1.49 0.23 68 0.21 12.21 12.83 10.55 8.3 17.6 4.8
2.30 1.52 0.22 71 0.21 12.08 13.27 10.26 8.4 17.7 5.0
2.40 1.51 0.22 74 0.20 11.98 13.10 10.23 8.4 17.8 5.4
2.50 1.50 0.22 78 0.20 11.86 13.21 10.02 8.5 17.9 5.6
3.00 1.55 0.20 92 0.19 11.32 13.98 9.33 8.7 18.1 6.1
3.50 1.56 0.18 110 0.17 10.81 14.79 8.31 8.8 18.3 6.8
4.00 1.58 0.17 131 0.15 10.31 15.24 7.46 9.0 19.1 7.9
4.50 1.60 0.17 154 0.14 9.82 15.23 6.92 9.3 19.4 8.7
5.00 1.62 0.19 177 0.13 9.32 14.59 6.51 9.6 19.8 9.1
5.50 1.68 0.21 -167 0.13 8.86 13.61 6.58 10.0 20.2 11.0
6.00 1.67 0.25 -136 0.15 8.45 11.99 7.33 9.8 19.8 11.6
9
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 20 mA, ZO = 50Ω, Vref = 0.5 V (from S and Noise Parameters in Figure 2 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.76 -11 6.35 173 0.04 18 0.40 -11 16.1 2.4 8.0 19.0 -27.5
0.50 0.71 -27 6.00 159 0.05 12 0.38 -17 15.6 3.0 8.4 18.0 -26.9
0.80 0.69 -38 5.74 148 0.05 15 0.37 -25 15.2 3.3 8.7 17.4 -26.5
0.90 0.67 -42 5.65 145 0.05 16 0.37 -27 15.0 3.4 8.7 17.2 -26.3
1.00 0.66 -46 5.57 142 0.05 17 0.37 -29 14.9 3.6 8.7 17.0 -26.1
1.10 0.65 -50 5.48 138 0.05 18 0.37 -32 14.8 3.7 8.7 16.8 -25.9
1.20 0.64 -54 5.39 135 0.05 18 0.37 -33 14.6 3.8 8.7 16.6 -25.6
1.30 0.64 -57 5.32 132 0.05 19 0.36 -36 14.5 3.9 8.8 16.4 -25.4
1.40 0.63 -60 5.23 129 0.05 19 0.36 -38 14.4 4.0 8.9 16.2 -25.2
1.50 0.62 -64 5.15 126 0.06 19 0.36 -40 14.2 4.2 8.9 16.0 -25.0
1.60 0.61 -67 5.06 123 0.06 19 0.36 -42 14.1 4.3 9.0 15.8 -24.8
1.70 0.60 -71 4.98 120 0.06 20 0.35 -44 14.0 4.5 9.0 15.6 -24.6
1.80 0.59 -74 4.90 117 0.06 20 0.35 -46 13.8 4.6 9.1 15.4 -24.4
1.90 0.58 -77 4.83 114 0.06 20 0.35 -47 13.7 4.7 9.2 15.2 -24.2
2.00 0.57 -81 4.75 111 0.06 19 0.34 -49 13.5 4.9 9.3 15.0 -24.0
2.10 0.56 -84 4.68 109 0.06 19 0.34 -51 13.4 5.0 9.3 14.8 -23.8
2.20 0.55 -87 4.61 106 0.07 19 0.34 -52 13.3 5.1 9.4 14.7 -23.6
2.30 0.55 -90 4.54 103 0.07 19 0.33 -54 13.2 5.2 9.5 14.5 -23.4
2.40 0.54 -93 4.48 101 0.07 18 0.33 -56 13.0 5.4 9.6 14.3 -23.2
2.50 0.53 -97 4.41 98 0.07 18 0.33 -57 12.9 5.5 9.7 14.2 -23.1
3.00 0.49 -112 4.11 85 0.08 16 0.30 -66 12.3 6.2 10.5 13.4 -22.3
3.50 0.46 -128 3.85 73 0.08 13 0.27 -75 11.7 6.7 11.3 12.7 -21.6
4.00 0.44 -145 3.61 60 0.09 10 0.25 -86 11.2 7.2 12.2 12.0 -21.0
4.50 0.42 -162 3.39 49 0.01 6 0.22 -98 10.6 7.6 13.1 11.4 -20.4
5.00 0.41 -179 3.18 37 0.10 2 0.21 -111 10.1 7.7 13.8 10.8 -19.9
5.50 0.41 166 2.99 26 0.11 -1 0.20 -124 9.5 7.7 14.1 10.3 -19.5
6.00 0.42 150 2.83 16 0.11 -5 0.19 -138 9.0 7.6 14.6 9.8 -19.0
6.50 0.43 139 2.67 6 0.12 -10 0.18 -151 8.5 7.3 14.8 9.4 -18.5
7.00 0.42 127 2.53 -5 0.12 -14 0.17 -162 8.1 7.6 15.4 8.9 -18.1
7.50 0.41 116 2.42 -15 0.13 -18 0.16 -172 7.7 7.8 15.9 8.4 -17.5
8.00 0.41 102 2.33 -26 0.14 -23 0.15 172 7.3 7.7 16.4 8.1 -16.9
Freq. NF
min
Γ
opt
R
n
/Z
o
G
a
|Γ
opt
|RL R
n
P
1dB
OIP
3
IIP
3
(GHz) (dB) Mag Ang (dB) (dB) (
Ω
) (dBm) (dBm) (dBm)
0.80 1.30 0.37 39 0.25 15.72 8.63 12.40 11.8 23.9 8.8
0.90 1.31 0.35 40 0.25 15.53 9.11 12.47 11.7 23.9 9.0
1.00 1.32 0.35 41 0.22 15.39 9.18 11.01 11.7 23.9 9.1
1.50 1.35 0.27 51 0.21 14.51 11.47 10.50 11.6 24.0 9.7
1.80 1.38 0.22 58 0.20 14.00 13.11 10.05 11.5 24.0 10.0
1.90 1.37 0.22 61 0.20 13.85 13.33 9.89 11.6 24.0 10.1
2.00 1.39 0.21 65 0.19 13.71 13.73 9.71 11.6 24.0 10.2
2.10 1.40 0.20 70 0.19 13.57 13.85 9.48 11.6 24.1 10.3
2.20 1.41 0.20 71 0.19 13.44 13.85 9.47 11.7 24.3 10.4
2.30 1.40 0.20 74 0.19 13.30 13.94 9.26 11.7 24.4 10.5
2.40 1.43 0.20 78 0.18 13.17 14.17 9.12 11.8 24.3 10.6
2.50 1.43 0.20 81 0.18 13.04 14.19 8.95 11.8 24.4 10.7
3.00 1.45 0.18 95 0.17 12.40 15.12 8.45 11.9 24.7 11.2
3.50 1.47 0.16 117 0.15 11.82 15.77 7.52 12.0 24.6 11.8
4.00 1.47 0.16 139 0.14 11.26 16.13 6.86 12.1 24.5 12.6
4.50 1.51 0.16 163 0.13 10.71 15.96 6.47 12.3 24.6 14.3
5.00 1.54 0.18 -175 0.12 10.19 14.85 6.20 12.4 24.8 15.0
5.50 1.60 0.20 -160 0.13 9.71 13.81 6.34 12.5 24.9 15.5
6.00 1.67 0.27 -129 0.14 9.33 11.47 7.13 12.6 25.0 15.7
10
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 40 mA, ZO = 50Ω, Vref = 0.3 V (from S and Noise Parameters in Figure 2 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.75 -11 6.84 173 0.04 17 0.36 -12 16.7 2.5 8.9 19.7 -28.1
0.50 0.70 -28 6.45 159 0.04 11 0.34 -17 16.2 3.1 9.3 18.7 -27.6
0.80 0.68 -39 6.15 148 0.04 14 0.33 -24 15.8 3.4 9.6 18.1 -27.2
0.90 0.67 -43 6.05 144 0.04 15 0.33 -26 15.6 3.5 9.6 17.8 -27.0
1.00 0.65 -47 5.96 141 0.05 16 0.33 -28 15.5 3.7 9.6 17.6 -26.9
1.10 0.64 -51 5.87 138 0.05 17 0.33 -30 15.4 3.8 9.6 17.4 -26.7
1.20 0.63 -55 5.77 134 0.05 18 0.33 -32 15.2 4.0 9.7 17.1 -26.5
1.30 0.63 -58 5.68 131 0.05 19 0.33 -34 15.1 4.1 9.7 17.0 -26.3
1.40 0.62 -62 5.58 128 0.05 19 0.33 -36 14.9 4.2 9.8 16.8 -26.1
1.50 0.61 -65 5.49 125 0.05 20 0.32 -38 14.8 4.3 9.8 16.5 -25.9
1.60 0.60 -69 5.40 122 0.05 20 0.32 -40 14.6 4.5 9.9 16.3 -25.6
1.70 0.59 -72 5.31 119 0.05 20 0.32 -41 14.5 4.6 9.9 16.1 -25.4
1.80 0.58 -75 5.22 116 0.05 20 0.32 -43 14.4 4.8 10.0 15.9 -25.2
1.90 0.57 -79 5.13 113 0.06 20 0.32 -44 14.2 4.9 10.0 15.7 -25.1
2.00 0.56 -82 5.05 110 0.06 21 0.31 -46 14.1 5.1 10.1 15.5 -24.9
2.10 0.55 -85 4.96 108 0.06 21 0.31 -47 13.9 5.2 10.2 15.3 -24.7
2.20 0.54 -89 4.89 105 0.06 20 0.31 -49 13.8 5.3 10.2 15.1 -24.5
2.30 0.53 -92 4.81 102 0.06 20 0.31 -50 13.6 5.5 10.3 14.9 -24.3
2.40 0.53 -95 4.74 100 0.06 20 0.30 -52 13.5 5.6 10.4 14.8 -24.1
2.50 0.52 -98 4.66 97 0.06 20 0.30 -53 13.4 5.7 10.5 14.6 -23.9
3.00 0.48 -114 4.32 84 0.07 18 0.28 -61 12.7 6.4 11.2 13.8 -23.1
3.50 0.45 -130 4.03 72 0.08 16 0.25 -69 12.1 7.0 12.0 13.0 -22.4
4.00 0.42 -147 3.77 60 0.08 14 0.23 -79 11.5 7.5 12.9 12.3 -21.7
4.50 0.41 -164 3.53 48 0.09 11 0.21 -90 11.0 7.8 13.7 11.7 -21.1
5.00 0.40 179 3.31 37 0.09 7 0.19 -102 10.4 7.9 14.4 11.1 -20.5
5.50 0.40 165 3.11 26 0.10 3 0.18 -114 9.9 7.9 14.7 10.6 -20.0
6.00 0.41 148 2.93 16 0.11 0 0.17 -127 9.3 7.8 15.3 10.1 -19.4
6.50 0.42 137 2.77 6 0.11 -5 0.17 -140 8.9 7.5 15.5 9.7 -18.9
7.00 0.41 126 2.63 -5 0.12 -9 0.16 -150 8.4 7.8 16.1 9.2 -18.4
7.50 0.40 115 2.51 -15 0.13 -13 0.15 -158 8.0 8.0 16.5 8.7 -17.8
8.00 0.40 101 2.42 -25 0.14 -18 0.14 -173 7.7 7.9 17.0 8.4 -17.0
Freq. NF
min
Γ
opt
R
n
/Z
o
G
a
|Γ
opt
|RL R
n
P
1dB
OIP
3
IIP
3
(GHz) (dB) Mag Ang (dB) (dB) (
Ω
) (dBm) (dBm) (dBm)
0.80 1.29 0.40 36 0.27 16.44 8.03 13.29 15.2 26.0 10.6
0.90 1.26 0.38 37 0.27 16.25 8.34 13.34 15.1 26.0 10.8
1.00 1.22 0.35 41 0.27 16.02 9.06 13.39 15.1 25.9 11.0
1.50 1.40 0.29 53 0.27 15.13 10.79 13.44 14.8 26.2 11.8
1.80 1.49 0.26 61 0.23 14.62 11.65 11.72 14.8 26.1 11.8
1.90 1.50 0.26 64 0.23 14.46 11.87 11.41 14.8 26.1 11.9
2.00 1.52 0.24 68 0.22 14.30 12.27 11.20 14.9 26.0 12.0
2.10 1.52 0.25 72 0.22 14.16 12.16 10.92 14.9 26.2 12.4
2.20 1.53 0.24 75 0.22 14.01 12.35 10.79 15.0 26.3 12.7
2.30 1.53 0.23 78 0.21 13.86 12.59 10.52 15.0 26.4 13.0
2.40 1.55 0.23 81 0.21 13.73 12.60 10.33 15.1 26.5 13.2
2.50 1.55 0.24 85 0.20 13.59 12.57 10.14 15.1 26.7 13.4
3.00 1.59 0.22 100 0.18 12.91 13.32 9.18 15.2 26.9 14.1
3.50 1.60 0.20 120 0.16 12.29 13.81 8.06 15.3 27.0 14.8
4.00 1.64 0.20 142 0.14 11.71 13.86 7.11 15.6 27.3 15.7
4.50 1.68 0.21 163 0.13 11.15 13.63 6.57 15.5 27.5 16.5
5.00 1.71 0.23 -175 0.13 10.61 12.87 6.35 15.2 27.7 16.7
5.50 1.78 0.25 -159 0.13 10.15 11.91 6.54 16.0 28.1 17.7
6.00 1.74 0.31 -133 0.15 9.76 10.27 7.69 15.5 27.9 18.4
11
MGA-72543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 60 mA, ZO = 50Ω, Vref = 0.1 V (from S and Noise Parameters in Figure 2 test circuit)
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
G
max
Isolation
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB) (dB) (dB)
0.10 0.77 -10 6.38 173 0.04 17 0.37 -11 16.1 2.3 8.5 19.2 -28.2
0.50 0.72 -27 6.01 159 0.04 10 0.36 -16 15.6 2.9 8.9 18.2 -27.8
0.80 0.69 -39 5.75 148 0.04 13 0.35 -22 15.2 3.2 9.2 17.6 -27.5
0.90 0.68 -43 5.66 145 0.04 14 0.35 -24 15.1 3.3 9.2 17.3 -27.3
1.00 0.67 -47 5.58 141 0.04 15 0.35 -26 14.9 3.5 9.2 17.1 -27.2
1.10 0.66 -51 5.49 138 0.04 16 0.35 -28 14.8 3.6 9.2 16.9 -27.0
1.20 0.65 -54 5.40 135 0.05 17 0.35 -30 14.7 3.7 9.2 16.7 -26.8
1.30 0.65 -58 5.32 132 0.05 18 0.35 -32 14.5 3.8 9.2 16.5 -26.6
1.40 0.64 -62 5.23 129 0.05 18 0.34 -34 14.4 3.9 9.3 16.3 -26.5
1.50 0.63 -65 5.15 125 0.05 19 0.34 -36 14.2 4.0 9.3 16.1 -26.3
1.60 0.62 -69 5.07 122 0.05 19 0.34 -38 14.0 4.2 9.4 15.9 -26.1
1.70 0.61 -72 4.98 119 0.05 19 0.34 -39 14.0 4.3 9.4 15.7 -25.9
1.80 0.60 -75 4.90 117 0.05 19 0.34 -41 13.8 4.5 9.4 15.5 -25.7
1.90 0.59 -79 4.82 114 0.05 20 0.34 -42 13.7 4.6 9.5 15.3 -25.5
2.00 0.58 -82 4.75 111 0.05 20 0.33 -44 13.5 4.7 9.5 15.1 -25.3
2.10 0.57 -85 4.67 108 0.06 20 0.33 -45 13.4 4.9 9.6 14.9 -25.2
2.20 0.56 -89 4.60 105 0.06 20 0.33 -46 13.3 5.0 9.7 14.7 -25.0
2.30 0.55 -92 4.53 103 0.06 20 0.33 -48 13.1 5.1 9.7 14.5 -24.8
2.40 0.55 -95 4.47 100 0.06 20 0.32 -49 13.0 5.2 9.8 14.4 -24.7
2.50 0.54 -98 4.39 97 0.06 19 0.32 -51 12.9 5.4 9.9 14.2 -24.5
3.00 0.50 -114 4.09 84 0.07 18 0.30 -58 12.2 6.0 10.5 13.4 -23.7
3.50 0.47 -130 3.83 72 0.07 17 0.28 -66 11.7 6.6 11.1 12.6 -23.1
4.00 0.44 -147 3.59 60 0.08 15 0.25 -75 11.1 7.0 11.9 12.0 -22.4
4.50 0.43 -164 3.36 48 0.08 12 0.23 -86 10.5 7.4 12.6 11.4 -21.8
5.00 0.42 179 3.15 37 0.09 9 0.22 -97 10.0 7.5 13.2 10.8 -21.2
5.50 0.42 164 2.97 26 0.09 6 0.21 -108 9.5 7.5 13.5 10.3 -20.6
6.00 0.43 148 2.80 16 0.10 3 0.20 -121 8.9 7.3 14.0 9.8 -20.0
6.50 0.44 137 2.65 5 0.11 -1 0.20 -132 8.5 7.1 14.2 9.4 -19.4
7.00 0.43 126 2.51 -6 0.11 -5 0.19 -141 8.0 7.3 14.6 8.9 -18.9
7.50 0.42 115 2.40 -16 0.12 -9 0.18 -149 7.6 7.6 14.9 8.4 -18.2
8.00 0.42 101 2.32 -26 0.13 -14 0.17 -162 7.3 7.4 15.4 8.1 -17.4
Freq. NF
min
Γ
opt
R
n
/Z
o
G
a
|Γ
opt
|RL R
n
P
1dB
OIP
3
IIP
3
(GHz) (dB) Mag Ang (dB) (dB) (
Ω
) (dBm) (dBm) (dBm)
0.80 1.61 0.43 36 0.41 15.94 7.42 20.58 17.0 28.0 13.3
0.90 1.46 0.43 37 0.44 15.83 7.27 21.84 17.0 28.2 13.5
1.00 1.51 0.46 40 0.39 15.80 6.81 19.69 16.9 28.4 13.6
1.50 1.70 0.39 53 0.87 14.86 8.21 43.44 16.7 28.5 14.1
1.80 1.81 0.35 64 0.33 14.30 9.20 16.67 16.9 27.7 14.2
1.90 1.83 0.34 67 0.32 14.13 9.47 16.16 16.8 27.9 14.2
2.00 1.85 0.33 71 0.31 13.97 9.65 15.72 17.1 27.8 14.8
2.10 1.85 0.33 74 0.31 13.82 9.69 15.27 16.9 28.1 15.0
2.20 1.86 0.32 77 0.30 13.68 9.82 14.96 17.1 28.2 15.3
2.30 1.88 0.32 81 0.29 13.53 9.99 14.39 17.1 28.4 15.5
2.40 1.89 0.32 84 0.28 13.41 9.98 14.13 17.2 28.6 15.6
2.50 1.90 0.31 87 0.27 13.26 10.01 13.72 17.2 28.8 15.9
3.00 1.95 0.30 103 0.24 12.60 10.54 12.01 17.5 28.4 16.2
3.50 1.99 0.29 122 0.20 12.01 10.75 9.93 17.3 28.8 16.9
4.00 2.02 0.29 143 0.16 11.44 10.79 8.22 17.5 28.7 17.4
4.50 2.09 0.30 163 0.14 10.91 10.60 7.17 17.8 29.2 18.6
5.00 2.13 0.32 -178 0.13 10.40 10.03 6.74 17.5 29.0 18.8
5.50 2.23 0.34 -161 0.14 9.97 9.38 7.17 16.6 27.9 18.5
6.00 2.23 0.38 -138 0.18 9.58 8.43 9.17 16.0 29.0 19.9
12
MGA-72543 Typical Scattering Parameters (LNA/Switch Powered Off)
TC = 25°C, Vd = 0V, Id = 0 mA, ZO = 50 Ω
Freq. S
11
S
21
S
12
S
22
|S
21
|
2
RL
in
RL
out
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (dB) (dB) (dB)
0.8 0.80 0 0.097 50 0.097 50 0.81 167 -20.3 1.9 1.8
1.2 0.75 0 0.122 39 0.122 39 0.81 160 -18.3 2.5 1.8
1.6 0.71 0 0.141 31 0.141 31 0.80 152 -17.0 3.0 1.9
2.0 0.69 0 0.157 25 0.157 25 0.80 145 -16.1 3.2 1.9
2.4 0.66 0 0.171 18 0.171 18 0.80 137 -15.3 3.6 1.9
2.8 0.65 171 0.184 12 0.184 12 0.80 129 -14.7 3.7 1.9
3.2 0.64 157 0.195 6 0.195 6 0.81 122 -14.2 3.9 1.8
3.6 0.64 144 0.204 0 0.204 0 0.80 115 -13.8 3.9 1.9
4.0 0.63 132 0.211 0 0.211 0 0.80 108 -13.5 4.0 1.9
4.4 0.63 121 0.216 0 0.216 0 0.81 102 -13.3 4.0 1.8
4.8 0.63 112 0.218 0 0.218 0 0.81 95 -13.2 4.0 1.8
5.2 0.64 103 0.224 0 0.224 0 0.82 89 -13.0 3.9 1.7
5.6 0.64 94 0.227 0 0.227 0 0.82 83 -12.9 3.9 1.7
6.0 0.64 86 0.229 0 0.229 0 0.82 76 -12.8 3.9 1.7
13
Applications Information:
Designing with the
MGA-72543 RFIC
Amplifier/Bypass Switch
Description
The MGA-72543 is a single-stage,
GaAs RFIC amplifier with an
integrated bypass switch. A
functional diagram of the
MGA-72543 is shown in Figure 1.
The MGA-72543 is designed for
receivers and transmitters operat-
ing from 100 MHz to 6 GHz with
an emphasis on 1.9 GHz CDMA
applications. The MGA-72543
combines low noise performance
with high linearity to make it
especially advantageous for use in
receiver front-ends.
RF
OUTPUT
AMPLIFIER
BYPASS MODE
RF
INPUT
Figure 1. MGA-72543 Functional
Diagram.
The purpose of the switch feature
is to prevent distortion of high
signal levels in receiver applica-
tions by bypassing the amplifier
altogether. The bypass switch can
be thought of as a 1-bit digital
AGC circuit that not only pre-
vents distortion by bypassing the
MGA-72543 amplifier, but also
reduces front-end system gain by
approximately 16 dB to avoid
overdriving subsequent stages in
the receiver such as the mixer.
An additional feature of the
MGA-72543 is the ability to
externally set device current to
balance output power capability
and high linearity with low DC
power consumption. The adjust-
able current feature of the
MGA-72543 allows it to deliver
output power levels in excess of
+15 dBm (P1dB), thus extending
its use to other system applica-
tions such as transmitter driver
stages.
The MGA-72543 is designed to
operate from a +3-volt power
supply and is contained in a
miniature 4-lead, SOT-343 (SC-70)
package to minimize printed
circuit board space.
LNA Applications
For low noise amplifier applica-
tions, the MGA-72543 is typically
biased in the 10 – 20 mA range.
Minimum NF occurs at 20 mA as
noted in the performance curve
of NFmin vs. Id. Biasing at cur-
rents significantly less than
10 mA is not recommended since
the characteristics of the device
began to change very rapidly at
lower currents.
The MGA-72543 is matched
internally for low NF. Over a
current range of 10 – 30 mA, the
magnitude of Γopt at 1900 MHz is
typically less than 0.25 and
additional impedance matching
would only net about 0.1 dB
improvement in noise figure.
Without external matching, the
input return loss for the
MGA-72543 is approximately 5 dB
at 1900 MHz. If desired, a small
amount of NF can be traded off
for a significant improvement in
input match. For example, the
addition of a series inductance of
2.7 to 3.9 nH at the input of the
MGA-72543 will improve the input
return loss to greater than 10 dB
with a sacrifice in NF of only
0.1 dB.
The output of the MGA-72543 is
internally matched to provide an
output SWR of approximately 2:1
at 1900 MHz. Input and output
matches both improve at higher
frequencies.
Driver Amplifier
Applications
The flexibility of the adjustable
current feature makes the
MGA-72543 suitable for use in
transmitter driver stages. Biasing
the amplifier at 40 – 50 mA
enables it to deliver an output
power at 1-dB gain compression
of up to +16 dBm. Power effi-
ciency in the unsaturated driver
mode is on the order of 30%. If
operated as a saturated amplifier,
both output power and efficiency
will increase.
Since the MGA-72543 is internally
matched for low noise figure, it
may be desirable to add external
impedance matching at the input
to improve the power match for
driver applications. Since the
reactive part of the input of the
device impedance is capacitive, a
series inductor at the input is
often all that is needed to provide
a suitable match for many appli-
cations. For 1900 MHz circuits, a
series inductance of 3.9 nH will
match the input to a return loss of
approximately 13 dB.
As in the case of low noise bias
levels, the output of the MGA-
72543 is already well matched to
50 Ω and no additional matching
is needed for most applications.
When used for driver stage
applications, the bypass switch
feature of the MGA-72543 can be
used to shut down the amplifier
to conserve supply current during
non-transmit periods. Supply
14
current in the bypass state is
nominally 2 µA.
Biasing
Biasing the MGA-72543 is similar
to biasing a discrete GaAs FET.
Passive biasing of the MGA-72543
may be accomplished by either of
two conventional methods, either
by biasing the gate or by using a
source resistor.
• Gate Bias
Using this method, Pins 1 and 4 of
the amplifier are DC grounded
and a negative bias voltage is
applied to Pin 3 as shown in
Figure 2. This method has the
advantage of not only DC, but
also RF grounding both of the
ground pins of the MGA-72543.
Direct RF grounding of the
device’s ground pins results in
slightly improved performance
while decreasing potential
instabilities, especially at higher
frequencies. The disadvantage is
that a negative supply voltage is
required.
OUTPUT
& Vd
INPUT 32
41
Vref
Figure 2. Gate Bias Method.
DC access to the input terminal
for applying the gate bias voltage
can be made through either a
RFC or high impedance transmis-
sion line as indicated in Figure 2.
The device current, Id, is deter-
mined by the voltage at Vref
(Pin 3) with respect to ground. A
plot of typical Id vs. Vref is shown
in Figure 3. Maximum device
current (approximately 65 mA)
occurs at Vref = 0.
0
10
50
40
30
20
-0.80 -0.70 -0.60 -0.50 -0.40 -0.20-0.30
I
d
(mA)
V
ref
(V)
Figure 3. Device Current vs. V
ref
.
The device current may also be
estimated from the following
equation:
Vref = 0.11√ Id – 0.96
where Id is in mA and Vref is in
volts.
The gate bias method would not
normally be used unless a nega-
tive supply voltage was readily
available. For reference, this is
the method used in the character-
ization test circuits shown in
Figures 1 and 2 of the MGA-72543
data sheet.
• Source Resistor Bias
The source resistor method is the
simplest way of biasing the
MGA-72543 using a single,
positive supply voltage. This
method, shown in Figure 4,
places the RF Input (Pin 3) at DC
ground and requires both of the
device grounds (Pins 1 and 4) to
be RF bypassed. Device current,
Id, is determined by the value of
the source resistance, Rbias,
between either Pin 1 or Pin 4 of
the MGA-72543 and DC ground.
Note: Pins 1 and 4 are connected
internally in the RFIC. Maximum
device current (approximately
65 mA) occurs for Rbias = 0.
OUTPUT
& V
d
INPUT 32
4
1
R
bias
Figure 4. Source Resistor Bias.
A simple method recommended
for DC grounding the input
terminal is to merely add a
resistor from Pin 3 to ground, as
shown in Figure 4. The value of
the shunt R can be comparatively
high since the only voltage drop
across it is due to minute leakage
currents that in the µA range. A
value of 1 KΩ would adequately
DC ground the input while
loading the RF signal by only
0.2 dB loss.
A plot of typical Id vs. Rbias is
shown in Figure 5.
0
10
60
50
40
30
20
040
20 60 80 100 140120
I
d
(mA)
R
bias
(Ω)
Figure 5. Device Current vs. Rbias.
The approximate value of the
external resistor, Rbias, may also
be calculated from:
Rbias = 964 (1 – 0.112 √ Id)
Id
where Rbias is in ohms and Id is
the desired device current in mA.
15
The source resistor technique is
the preferred and most common
method of biasing the
MGA-72543.
• Adaptive Biasing
For applications in which input
power levels vary over a wide
range, it may be useful to dynami-
cally adapt the bias of the
MGA-72543 to match the signal
level. This involves sensing the
signal level at some point in the
system and automatically adjust-
ing the bias current of the ampli-
fier accordingly. The advantage of
adaptive biasing is conservation
of supply current (longer battery
life) by using only the amount of
current necessary to handle the
input signal without distortion.
Adaptive biasing of the MGA-
72543 can be accomplished by
either analog or digital means.
For the analog control case, an
active current source (discrete
device or IC) is used in lieu of the
source bias resistor. For simple
digital control, electronic
switches can be used to control
the value of the source resistor in
discrete increments. Both meth-
ods of adaptive biasing are
depicted in Figure 6.
• Applying the Device Voltage
Common to all methods of
biasing, voltage Vd is applied to
the MGA-72543 through the RF
Output connection (Pin 2). A RF
choke is used to isolate the RF
signal from the DC supply. The
bias line is capacitively bypassed
to keep RF from the DC supply
lines and prevent resonant dips or
peaks in the response of the
amplifier. Where practical, it may
be cost effective to use a length
of high impedance transmission
line (preferably λ/4) in place of
the RFC.
When using the gate bias method,
the overall device voltage is equal
to the sum of Vref at Pin 3 and
voltage Vd at Pin 2. As an ex-
ample, to bias the device at the
typical operating voltage of 3
volts, Vd would be set to 2.5 volts
for a Vref of -0.5 volts. Figure 7
shows a DC schematic of a gate
bias circuit.
Just as for the gate bias method,
the overall device voltage for
source resistor biasing is equal to
Vref + Vd. Since Vref is zero when
using a source resistor, Vd is the
same as the device operating
voltage, typically 3 volts. A source
resistor bias circuit is shown in
Figure 8.
A DC blocking capacitor at the
output of the RFIC isolates the
supply voltage from succeeding
circuits. If the source resistor
method of biasing is used, the RF
input terminal of the MGA-72543
is at DC ground potential and a
blocking capacitor is not required
unless the input is connected
directly to a preceding stage that
has a DC voltage present.
RF
Output
RFC
V
d
= +2.5 V
Vref = -0.5 V
RF
Input
72
3
2
4
1
Figure 7. DC Schematic for Gate Bias.
RF
Output
RFC
V
d
= +3 V
R
bias
RF
Input
72
3
2
4
1
Figure 8. DC Schematic of Source
Resistor Biasing.
• Biasing for Higher Linearity
or Output Power
While the MGA-72543 is designed
primarily for use up to 50 mA in
+3 volt applications, the output
power can be increased by using
higher currents and/or higher
supply voltages. If higher bias
levels are used, appropriate
caution should be observed for
both the thermal limits and the
Absolute Maximum Ratings.
Analog
Control
32
41
Digital
Control
(b) Digital(a) Analog
32
41
Figure 6. Adaptive Bias Control.
16
As a guideline for operation at
higher bias levels, the Maximum
Operating conditions shown in the
data sheet table of Absolute
Maximum Ratings should be
followed. This set of conditions is
the maximum combination of bias
voltage, bias current, and device
temperature that is recommended
for reliable operation. Note: In
contrast to Absolute Maximum
ratings, in which exceeding any
one parameter may result in
damage to the device, all of the
Maximum Operating conditions
may reliably be applied to the
MGA-72543 simultaneously.
Controlling the Switch
The state of the MGA-72543
(amplifier or bypass mode) is
controlled by the device current.
For device currents greater than
5 mA, the MGA-72543 functions
as an amplifier. If the device
current is set to zero, the MGA-
72543 is switched into a bypass
mode in which the amplifier is
turned off and the signal is routed
around the amplifier with a loss
of approximately 2.5 dB.
The bypass state is normally
engaged in the presence of high
input levels to prevent distortion
of the signal that might occur in
the amplifier. In the bypass state,
the input TOI is very high,
typically +39 dBm at 1900 MHz.
The simplest method of placing
the MGA-72543 into the bypass
mode is to open-circuit the
ground terminals at Pins 1 and 4.
With the ground connection open,
the internal control circuit of the
MGA-72543 auto-switches from
the amplifier mode into a bypass
state and the device current
drops to near zero. Nominal
current in the bypass state is 2 µA
with a maximum of 15 µA.
32
41
Rbias
Bypass Switch
Enable
Figure 9. MGA-72543 Amplifier/
Bypass State Switching.
An electronic switch can be used
to control states as shown in
Figure 9. The control switch
could be implemented with either
a discrete transistor or simple IC.
The speed at which the MGA-
72543 switches between states is
extremely fast and will normally
be limited by the time constants
of external circuit components,
such as the bias circuit and the
bypass and blocking capacitors.
The input and output of the
MGA-72543 while in the bypass
state are internally matched to
50 Ω. The input return loss can be
further improved at 1900 MHz by
adding a 2.7 to 3.9 nH series
inductor added to the input. This
is the same approximate value of
inductor that is used to improve
input match when the MGA-72543
is in the amplifier state.
Thermal Considerations
Good thermal design is always an
important consideration in the
reliable use of any device, since
the Mean Time To Failure
(MTTF) of semiconductors is
inversely proportional to the
operating temperature.
The MGA-72543 is a compara-
tively low power dissipation
device and, as such, operates at
conservative temperatures. When
biased at 3 volts and 20 mA for
LNA applications, the power
dissipation is 3.0 volts x 20 mA,
or 60 mW. The temperature
increment from the RFIC channel
to its case is then 0.060 watt x
200°C/watt, or only 12°C.
Subtracting the channel-to-case
temperature rise from the
suggested maximum junction
temperature of 150°C, the result-
ing maximum allowable case
temperature is 138°C.
The worst case thermal situation
occurs when the MGA-72543 is
operated at its Maximum Operat-
ing conditions in an effort to
maximize output power or
achieve minimum distortion. A
similar calculation for the Maxi-
mum Operating bias of 4.2 volts
and 60 mA yields a maximum
allowable case temperature of
100°C. This calculation further
assumes the worst case of no RF
power being extracted from the
device. When operated in a
saturated mode, both power-
added efficiency and the maxi-
mum allowable case temperature
will increase.
Note: “Case” temperature for
surface mount packages such as
the SOT-343 refers to the inter-
face between the package pins
and the mounting surface, i.e., the
temperature at the PCB mounting
pads. The primary heat path from
the RFIC chip to the system
heatsink is by means of conduc-
tion through the package leads
and ground vias to the
groundplane of the PCB.
PCB Layout and Grounding
When laying out a printed circuit
board for the MGA-72543, several
points should be considered. Of
primary concern is the RF
bypassing of the ground terminals
when the device is biased using
the source resistor method.
17
• Package Footprint
A suggested PCB pad print for the
miniature, 4-lead SOT-343 (SC-70)
package used by the MGA-72543
is shown in Figure 10.
This pad print provides allowance
for package placement by auto-
mated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of
the MGA-72543. The layout is
shown with a footprint of the
MGA-72543 superimposed on the
PCB pads for reference.
1.30
0.051
0.50
0.020
.080
0.031
1.15
0.045
1.71
0.067
0.80
0.031
Figure 10. PCB Pad Print for SOT-343
Package (mm/inches).
• RF bypass
For layouts using the source
resistor method of biasing, both of
the ground terminals of the MGA-
72543 must be well bypassed to
maintain device stability.
Beginning with the package pad
print in Figure 10, an RF layout
similar to the one shown in
Figure 11 is a good starting point
for using the MGA-72543 with
capacitor-bypassed ground
terminals. It is a best practice to
use multiple vias to minimize
overall ground path inductance.
72
Figure 11. Layout for RF Bypass.
Two capacitors are used at each
of the PCB pads for both Pins 1
and 4. The value of the bypass
capacitors is a balance between
providing a small reactance for
good RF grounding, yet not being
so large that the capacitor’s
parasitics introduce undesirable
resonances or loss.
If the source resistor biasing
method is used, a ground pad
located near either Pin 1 or 4 pin
may be used to connect the
current-setting resistor (R
bias
)
directly to DC ground. If the R
bias
resistor is not located immediately
adjacent to the MGA-72543 (as
may be the case of dynamic
control of the device’s linearity),
then a small series resistor (e.g.,
10 Ω) located near the ground
terminal will help de-Q the connec-
tion from the MGA-72543 to an
external current-setting circuit.
• PCB Materials
FR-4 or G-10 type dielectric
materials are typical choices for
most low cost wireless applica-
tions using single or multilayer
printed circuit boards. The
thickness of single-layer boards
usually range from 0.020 to 0.031
inches. Circuit boards thicker
than 0.031 inches are not recom-
mended due to excessive induc-
tance in the ground vias.
Application Example
An example evaluation PCB
layout for the MGA-72543 is
shown in Figure 12. This evalua-
tion circuit is designed for
operation from a +3-volt supply
and includes provision for a 2-bit
DIP switch to set the state of the
MGA-72543. For evaluation
purposes, the 2-bit switch is used
to set the device to either of four
states: (1) bypass mode – switch
bypasses the amplifier, (2) low
noise amplifier mode – low bias
current, (3) and (4) driver ampli-
fier modes – high bias currents.
MGA-71, MGA-72
HM 8/98
VdVin
Vcon
IN
Out
Figure 12. PCB Layout for Evaluation
Circuit.
A completed evaluation amplifier
optimized for use at 1900 MHz is
shown with all related compo-
nents and SMA connectors in
Figure 13. A schematic diagram of
the evaluation circuit is shown in
Figure 14 with component values
in Table 1.
The on-board resistors R3 and R4
form the equivalent source bias
resistor Rbias as indicated in the
schematic diagram in Figure 14.
In this example, resistor values of
R3 = 10 Ω and R4 = 24 Ω were
chosen to set the nominal device
current for the four states to: (1)
bypass mode, 0 mA, (2) LNA
mode, 20 mA, (3) driver, 35 mA,
and, (4) driver, 40 mA.
18
Other currents can be set by
positioning the DIP switch to the
bypass state and adding an
external bias resistor to Vcon.
Unless an external resistor is
used to set the current, the Vcon
terminal is left open. DC blocking
capacitors are provided for the
both the input and output.
The 2-pin, 0.100" centerline single
row headers attached to the Vd
and Vcon connections on the PCB
provide a convenient means of
making connections to the board
using either a mating connector
or clip leads.
A Note on Performance
Actual performance of the
MGA-72543 as measured in an
evaluation circuit may not exactly
match the data sheet specifica-
tions. The circuit board material,
passive components, RF by-
passes, and connectors all
introduce losses and parasitics
that degrade device performance.
For the evaluation circuit above,
fabricated on 0.031-inch thick
GETEK[1] G200D (εr = 4.2)
dielectric material, circuit losses
of about 0.3 dB would be ex-
pected at both the input an output
sides of the RFIC at 1900 MHz.
Measured noise figure (3 volts, 20
mA bias) would then be approxi-
mately 1.8 dB and gain 13.8 dB.
R1 = 5.1 KΩC (3 ea) =100 pF
R2 = 5.1 KΩC (3 ea) =1000 pF
R3 =10 ΩC1 =100 pF
R4 = 24 ΩC2 = 47 pF
L1 = 3.9 nH C3 = 30 pF
RFC = 22 nH C4 = 22 pF
SW1, SW2 DIP switch C5 =22 pF
SC Short C6 =30 pF
Table 1. Component Values for
1900 MHz Amplifier.
Hints and Troubleshooting
• Preventing Oscillation
Stability of the MGA-72543 is
dependent on having very good
RF grounding. Inadequate device
grounding or poor PCB layout
techniques could cause the device
to be potentially unstable.
MGA-71, MGA-72
HM 8/98
C
C0
C
C2
C8
C5
L1C1
R1
R4
R2 C0 SW ON
12
R3
C4
C3
RFC
SC
C
C0
VdVin
Vcon
IN
Out
72
Figure 13. Completed Amplifier with Component Reference Designators.
72
RF
Output
CC0
C2
C
RFC
Vd
R
bias
3
2
4
1
C3
C1 L1
R1
C4
C5
C
C0 SW2
SW1
R2
C6
R3
R4
RF
Input
Vin
C0
Vcon
Figure 14. Schematic Diagram of 1900 MHz Evaluation Amplifier.
[1] General Electric Co.
19
Even though a design may be
unconditionally stable (K > 1 and
B1 > 0) over its full frequency
range, other possibilities exist
that may cause an amplifier
circuit to oscillate. One condition
to check for is feedback in the
bias circuit. It is important to
capacitively bypass the connec-
tions to active bias circuits to
ensure stable operation. In
multistage circuits, feedback
through bias lines can also lead to
oscillation.
Components of insufficient
quality for the frequency range of
the amplifier can sometimes lead
to instability. Also, component
values that are chosen to be much
higher in value than is appropri-
ate for the application can
present a problem. In both of
these cases, the components may
have reactive parasitics that make
their impedances very different
than expected. Chip capacitors
may have excessive inductance,
or chip inductors can exhibit
resonances at unexpected
frequencies.
• A Note on Supply Line
Bypassing
Multiple bypass capacitors are
normally used throughout the
power distribution within a
wireless system. Consideration
should be given to potential
resonances formed by the combi-
nation of these capacitors and the
inductance of the DC distribution
lines. The addition of a small
value resistor in the bias supply
line between bypass capacitors
will often de-Q the bias circuit
and eliminate resonance effects.
Statistical Parameters
Several categories of parameters
appear within the electrical
specification portion of the
MGA-72543 data sheet. Param-
eters may be described with
values that are either “minimum
or maximum,” “typical,” or
“standard deviations.”
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on a statistically significant
number of parts taken from
nonconsecutive process lots of
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g., fits the standard
bell curve.
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
MGA-72543, these parameters are:
Vc test, NFtest, Ga test, IIP3 test, and
IL test. Each of the guaranteed
parameters is 100% tested as part
of the normal manufacturing and
test process.
Values for most of the parameters
in the table of Electrical
Specifications that are described
by typical data are the math-
ematical mean (µ), of the normal
distribution taken from the
characterization data. For param-
eters where measurements or
mathematical averaging may not
be practical, such as S-param-
eters or Noise Parameters and the
performance curves, the data
represents a nominal part taken
from the center of the character-
ization distribution. Typical
values are intended to be used as
a basis for electrical design.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MGA-72543, but
to also evaluate and optimize
trade-offs that affect a complete
wireless system, the standard
deviation (σ) is provided for
many of the Electrical Specifica-
tion parameters (at 25°C). The
standard deviation is a measure
of the variability about the mean.
It will be recalled that a normal
distribution is completely
described by the mean and
standard deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling
between any two values, usually
symmetrically located about the
mean. Referring to Figure 15 for
example, the probability of a
parameter being between ±1σ is
68.3%; between ±2σ is 95.4%; and
between ±3σ is 99.7%.
68%
95%
99%
Parameter Value
Mean (µ)
(typical)
-3σ-2σ-1σ+1σ+2σ+3σ
Figure 15. Normal Distribution Curve.
Phase Reference Planes
The positions of the reference
planes used to specify S-param-
eters and Noise Parameters for
the MGA-72543 are shown in
Figure 16. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
REFERENCE
PLANES
TEST CIRCUIT
Figure 16. Phase Reference Planes.
20
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-343
package, will reach solder reflow
temperatures faster than those
with a greater mass.
The MGA-72543 is has been
qualified to the time-temperature
profile shown in Figure 17. This
profile is representative of an IR
reflow type of surface mount
assembly process. After ramping
up from room temperature, the
circuit board with components
attached to it (held in place with
solder paste) passes through one
or more preheat zones. The
preheat zones increase the
temperature of the board and
components to prevent thermal
shock and begin evaporating
solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235°C.
These parameters are typical for
a surface mount assembly
process for the MGA-72543. As a
general guideline, the circuit
board and components should
only be exposed to the minimum
temperatures an times necessary
to achieve a uniform reflow of
solder.
Electrostatic
Sensitivity
RFICs are electro-
static discharge (ESD)
sensitive devices. Although the
MGA-72543 is robust in design,
permanent damage may occur to
these devices if they are sub-
jected to high-energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equip-
ment) can discharge without
detection and may result in
failure or degradation in perfor-
mance and reliability.
Electronic devices may be
subjected to ESD damage in any
of the following areas:
• Storage & handling
• Inspection
• Assembly & testing
• In-circuit use
The MGA-72543 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting,
testing, assembling, and using
these devices to avoid damage.
Any user-accessible points in
wireless equipment (e.g., antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications is which
the MGA-72543 is used as an
input or output stage with close
coupling to an external antenna,
the RFIC should be protected
from high voltage spikes due to
human contact with the antenna.
Figure 18. In-circuit ESD Protection.
A best practice, illustrated in
Figure 18, is to place a shunt
inductor (RFC) at the antenna
connection to protect the receiver
and transmitter circuits. It is
often advantageous to integrate
the RFC into a diplexer or T/R
switch control circuitry.
Figure 17. Surface Mount Assembly Profile.
TIME (seconds)
T
MAX
TEMPERATURE (°C)
0
0
50
100
150
200
250
60
Preheat
Zone Cool Down
Zone
Reflow
Zone
120 180 240 300
21
MGA-72543 Part Number Ordering Information
Part Number Devices per Container Container
MGA-72543-TR1 3000 7" reel
MGA-72543-TR2 10000 13" reel
MGA-72543-BLK 100 antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
22
Device Orientation
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
72x 72x 72x72x
Tape Dimensions
For Outline 4T
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5968-8054E
October 1, 2001
5988-4279EN
