LITE-ON TECHNOLOGY CORPORATION.
Propert y of Li t e-On O nly
FEATURES
* HIGH PHOTO SENSITIVITY
* SUITABLE FOR VISIABLE LIGHT
* LOW JUNCTION CAPACITANCE
* FAST SWITCHING TIME
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm(.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm(.059") max.
4. Lead spacing is measured where the leads emerge from the package.
5. Active area: 28 x 28 mil
2
6. Refractive index of epoxy: η≒1.5
7. Specifications are subject to change without notice.
Part No. : LTR-763JK-P1 DATA SHEET Page : 1 of 4
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION.
Pro p ert y of Li t e-On O nly
ABSOLUTE MAXIMUM RATINGS AT T
A
=25℃
℃℃
℃
PARAMETER MAXIMUM RATING
UNIT
Power Dissipation 150 mW
Reverse Voltage 30 V
Operating Temperature Range -40℃ to + 85℃
Storage Temperature Range -55℃ to + 100℃
Lead Soldering Temperature
[1.6mm(.063") From Body] 260℃ for 5 Seconds
ELECTRICAL OPTICAL CHARACTERISTICS AT T
A
=25℃
℃℃
℃
PARAMETER SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Reverse Break Down Voltage V
(BR)R
30 V I
R
= 100μA
Ee = 0mW/c㎡
Reverse Dark Current Voltage ID
(R)
30 nA V
R
= 10V
Ee = 0mW/c㎡
Open Circuit Voltage V
OC
350 mV λ = 940nm
Ee = 0.5mW/c㎡
Rise Time Tr 10 nsec
Fall Time Tf 10 nsec
V
R
= 10V
R
L
= 1KΩ
Short Circuit Current I
S
0.6 1 μA
V
R
= 0V
λ = 940nm
Ee = 1mW/c㎡
Total Capacitance C
T
5 pF V
R
= 3V
f = 1MHz
Ee = 0mW/c㎡
Wavelength of the Max Sensitivity λ
SMAX
880 nm
Part No. : LTR-763JK-P1 DATA SHEET Page : 2 of 4
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION.
Pro p ert y of Li t e-On O nly
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
10
-1
0
1
2
3
10
10
10
10
10
-2 -1 0 1 2
10 10 10 10
Fig.1 DARK CURRENT VS.
REVERSE VOLTAGE
TA=25° C, Ee=0 mW/cm
Fig.2 CAPACITANCE VS.
REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm
Fig.3 PHOTOCURRENT VS.
AMBIENT TEMPERATURE Fig.4 DARK CURRENT
AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm
Reverse Voltage VR
Ambient Temperature
Reverse Voltage VR
Ambient Temperature
Dark Current ID
Capacitance Ct
Photocurrent
Dark Current ID
pA
nA
Is amb
22
2
Is 25
4000
3000
2000
1000
00 5 10 2015 V V
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0-20 0 20 40 60 80 C 0 20 40 60 80 100
pF
o
o
C
o
Part No. : LTR-763JK-P1 DATA SHEET Page : 3 of 4
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION.
Pro p ert y of Li t e-On O nly
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
%
100
80
60
40
20
0200 400 600 800 1000
mW
CM
2
uA
175
125
75
25
0
-40
Wavelength
Fig.5 RELATIVE SPECTRAL SENSITIVITY
VS WAVELENGTH
Irradiance Ee
Fig.6 PHOTOCURRENT VS
IRRADIANCE = 940 nm
Photocurrent Ip
Relative Spectral Sensitivity
Fig.7 SENSITIVITY DIAGRAM
Ambient Temperature
Fig.8 TOTAL POWER DISSIPATION VS
AMBIENT TEMPERATURE
Total Power Dissipation mW
Relative Sensitivity
100 C
o
-20 0 20 40 60 80
1200 10
10-1-2
10 1010 10
-2
-1
10
0
10
1
10
2
10
00.30.5 0.60.2 0.4 100
o
0
1.0
0.7
0.8
0.9
70
80
60
50
o
o
o
o
40
30
o
o
o o
10 20
o
Part No. : LTR-763JK-P1 DATA SHEET Page : 4 of 4
BNS-OD-C131/A4
