Rugged Power MOSFETs File Number 2011 Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 350V-400V os(on) = 1.00 and 1.59 Features: @ Single pulse avalanche energy rated li SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF330R, IRF331R, IRF332R and IRF333R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings IRF330R, IRF331R, IRF332R, IRF333R N-CHANNEL ENHANCEMENT MODE 0 92cs-472658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) O33 O GATE 92cs-3780! JEDEC TO - 204AA Parameter IRF330R, IRF331R IRF332R IRF333R Units Vos Drain - Source Voltage 400 350 400 350 Vv Voca Drain - Gate Voltage (Res = 20 KQ) 400 350 400 350 Vv lo @ Tc = 25C Continuous Drain Current 5.5 5.5 4.5 45 A lo @ Te = 100C Continuous Drain Current 3.5 3.5 3.0 3.0 A lom Pulsed Drain Current @ 22 22 18 18 A Ves Gate - Source Voltage +20 Vv Po @ Te = 26C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) Ww/C Eas Single Pulse Avalanche Energy Rating 300 mij Tos Storage Temperature Range ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-47Rugged Power MOSFETs IRF330R, IRF331R, IRF332R, IRF333R Electrical Characteristics @ T. = 25C (Uniess Otherwise Specified) Parameter Type Min. T Typ. Max. | Units Test Conditions BVnss Orain - Source Breakdown Voltage IRF330R, | = IRF332R 400 _ - Vv Vas = OV IRF331R = IRF333R 350 _ - Vv Ip = 250nA Ves _ Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos = Vas, lo = 2500 A loss Gate-Source Leakage Forward ALL = = 100 nA Ves = 20V lass Gate-Source Leakage Reverse ALL = - -100 nA Ves = -20V loss Zero Gate Voltage Drain Current = = 250 HA Vos = Max. Rating, Vos = OV ALL = {1000 | wA_| Vos = Max. Rating x 0.8, Vas = OV, Te = 125C Ino On-State Drain Current @ IRF330R| 55 _ _ A een Vos > lotion: X Rosion max, Vas = 10V IR iaF333R| 45 | A Rosie Static Drain-Source On-State IRF330R| __ 08 10 Q Resistance @ IRF331R Vas = 10V, tp = 3.08 IRF332R | __ 10 18 0 IRF333R : : te Forward Transconductance @ ALL 3.0 40 =- SQ) | Vos > lnion, X Rostonmas, Ip = 3.0A Ciss Input Capacitance ALL _ 700 = pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _ 150 _ pF See Fig. 10 Cras Reverse Transfer Capacitance ALL _- 40 _ pF taton Turn-On Delay Time ALL _ _ 30 ns Voo = 175V, Ip = 3.0A, Zo = 152 te Rise Time ALL = _ 35 ns See Fig. 17 tutor Turn-Off Delay Time ALL _ _ 55 ns (MOSFET switching times are essentially te Fall Time ALL _ _ 35 ns independent of operating temperature.) Qo Total Gate Charge ALL _ 18 39 nc Ves = 10V, lp = 7.0A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qgs Gate-Source Charge. ALL _ " _ nc essentially independent of operating Qoa__Gate-Drain (Miller) Charge ALL | 70 | | ne _| temperature.) Lo internai Drain Inductance ALL _ 5.0 - nH Measured between Modified MOSFET the contact screw on symbol showing the header thatis closer to } internal device source and gate pins inductances and center of die. ut Ls internat Source Inductance ALL - 12.5 _ nH Measured from the source pin,6mm | 6 (0.25 in.) from ss header and source 5 bonding pad. secs cna Thermal Resistance RuJC Junction-to-Case ALL - 1.67. | C/W RinCS Case-to-Sink ALL al 0.1 C/W _| Mounting surface flat, smooth, and greased. RinJA _ Junction-to-Ambient ALL _ _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF330R _ _ 55 A Modified MOSFET symbol (Body Diode) IRF331R . showing the integrat 0 IRF332R 45 A reverse P-N junction rectifier. IRF333R | ~ : Isea Pulse Source Current IRF330R | _ 22 A 6 (Body Diode) @ IRF331R IRF332R 2 ee IRF333R | = 18 A Vsp Diode Forward Voltage @ IRF330R _ = = = IRF331R _- 1.6 Vv Tc = 25C, Is = 5.5A, Vas = OV IRFSSPR} _ | | 45 | Vv | To=25C, lo =4.5A, Vos = OV tee Reverse Recovery Time ALL - 600 = ns Ty = 150C, Ie = 5.5A, die/dt = 100A/us Qra Reverse Recovered Charge ALL _ 40 _ uC Ts = 150C, lk = .5A, dle/dt = 100A/us ton Forward Turn-on Time ALL intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. Ts = 25C to 180C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Vop = 5OV, starting Ty = 25C, L = 17mH, Ros = 250, Ipeax = 5.5A. See figures 15, 16. 6-48Rugged Power MOSFETs IRF330R, IRF331R, IRF332R, IRF333R 00.1 PULSE Vos > 'Dfon) * RoSton} max. Ip, ORAIN CURRENT (AMPERES) Ig. DRAIN CURRENT (AMPERES) 6 50 100 180 200 250 300 a 1 2 3 4 5 & ? Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgs. GATE-TO-SOUACE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 1S LIMITED Ip. ORAIN CUARENT (AMPERES) ip, ORAIN CURRENT (AMPERES) ct: Ty = 150C MAX et IRFSS1R, o 2 4 6 8 0 We 2 5 1 20 $0 100 200 (500 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN-TO-SQUACE VOLTAGE (VOLTS? Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area ~ o 5 in s Et 2 1 QUTY FACTOR. O= z . 2 2 a THERMAL IMPEGANCE! \ 2 PER UNIT BASE = Rinse = 1.67 DEG. CW. 3. Tym - To = Pom Zinc! Zeuctt ype. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 5 02 6 we 2 5 yd 2 5 2 2 5 wl 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maxi Effective Transi Thermal t d. J ion-to-Case Vs. Pulse Duration 6-49Rugged Power MOSFETs IRF330R, IRF331R, IRF332R, [(RF333R o & Rs wn Ty = 150C o ~ - S 5 Fry = 150C Ots. TRANSCONOUCTANCE (SIEMENS! lon. REVERSE DRAIN CURRENT (AMPERES) n Vos > 'p(on) * ROston} max. 80 us PULSE TEST Ty= 25C to 0 2 4 6 8 10 0 1 2 3 4 4p. DRAIN CURRENT {AMPERES} Vsp. SOURCE TO. GRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.28 an 8 2 a = 2 2 a Vgs = 10V as 06 Rag(an}. ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Ip * 2.08 BV oss. ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 02 -40 0 40 a0 120 160 -40 Q 40 80 120 1), JUNCTION TEMPERATURE (Cs T,, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Vos = t=} MHz ( { 1600 Cine * gs + Cg, Cys SHORTED Cres = Ogg Cys Cod Com * Cae ye Cys = Cay * Cog s 8 C, CAPACITANCE (oF) Vgg. GATE-TO SOURCE VOLTAGE (VOLTS) 00 Ip = 7A FOR TEST CIRCUIT SEE FIGURE 18 a 10 20 0 40 50 0 8 16 2 2 40 Vps, ORAIN.TO-SOURCE VOLTAGE (VOLTS) Oy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-50Rugged Power MOSFETs Agsion). DAAIN-TG-SOURCE ON RESISTANCE (GHMS) IRF330R, IRF331R , IRF332R, IRF333R Vgg = 10v JNes + 20v__] 7 4 JAF330R, 331A, A IRF332R, 333R tp. GRAIN CURRENT (AMPERES) Apsian) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION, INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL } 1 iL 1 L Q 0 10 15 20 8 30 28 50 5 100 125 150 ip, ORAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 80 VARY tp TO OBTAIN REQUIRED PEAK |, 70 Pp. POWER DISSIPATION (WATTS) - & 0 a a0 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve 92CS- 42660 Fig. 16 Unclamped Energy Waveforms 92C8- 42659 Fig. 15 Unctamped Energy Test Circuit PRE = 1 kHz Fig. 17 Switching Time Test Circuit Vos USOLATED SUPPLY) CURRENT REGULATOR Vop = 175V SAME TYPE AS DUT s0Q 12v T O2ut ' BATTERY . vo TO SCOPE = - 42724 s 928-42 | | fase a G CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-51