© 2000 IXYS All rights reserved 1 - 2
Advanced Technical Information
VCES = 1700 V
IC25 =16A
VCE(sat) = 6.0 V
tfi(typ) =50ns
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXBH)
Features
• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and
JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Capacitor discharge circuits
Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
98707 (02/23/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 1700 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 VCES 50 mA
VGE = 0 V; Note 1 TJ = 125°C 1.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, V GE = 15 V 6.0 V
Note 2 TJ = 125°C 5.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C16A
IC90 TC= 90°C10A
ICM TC= 25°C, 1 ms 4 0 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 33 WICM =40 A
(RBSOA) Clamped inductive load VCES = 1350 V
tSC VGE = 15 V, VCES = 1200V, TJ = 125°C
(SCSOA) RG = 33 W non repetitive 10 ms
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s 26 0 °C
MdMounting torque (M3) (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
TO-268
(IXBT)
GE
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 16N170A
IXBT 16N170A
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved 2 - 2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 8 12.5 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 1400 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 90 p F
Cres 31 pF
Qg65 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 22 nC
td(on) 15 ns
tri 25 ns
td(off) 160 250 ns
tfi 50 100 ns
Eoff 1.2 2.5 mJ
td(on) 15 ns
tri 28 ns
Eon 2.0 mJ
td(off) 220 ns
tfi 150 ns
Eoff 2.6 mJ
RthJC 0.83 K/W
RthCK (TO-247) 0.25 K/W
Reverse Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF= IC90, VGE = 0 V, Pulse test, 5 . 0 V
t< 300 us, duty cycle d < 2%
IRM IF= IC90, VGE = 0 V, -diF/dt = 50 A/us 1 0 A
trr vR= 100V 360 ns
Inductive load, TJ = 125°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 W
Inductive load, TJ = 25°C
IC= IC90, V GE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 W
IXBH 16N170A
IXBT 16N170A
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268AA (D3 PAK)
Min. Recommended Footprint
Notes:
1. Device must be heatsunk for high
temperature leakage current
measurements to avoid thermal
runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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