©2005 Fairchild Semiconductor Corporation
1
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BDW94CF Rev. A
BDW94CF PNP Epitaxial Silicon Transistor
July 2005
BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93CF Respectively
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -100 V
V
CEO
Collector-Emitter Voltage -100 V
I
C
Collector Current (DC) -12 A
I
CP
Collector Current (Pulse) * -15 A
I
B
Base Current -0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Conditions Min. Typ. Max Units
V
CEO(sus)
Collector-Emitter Sustaining Voltage I
C
-100mA, I
B
= 0 -100 V
I
CBO
Collector Cut-off Current V
CB
= -100V, I
E
= 0 -100 µA
I
CEO
Collector Cut-off Current VV
CE
= -100V, I
B
= 0 -1 mA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -2 mA
h
FE
DC Current Gain * V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
1000
750
100
20000
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
-2
-3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
-2.5
-4
V
V
V
F
Parallel Diode Forward Voltage * I
F
= -5A
I
F
= -10A
-1.3
-1.8
-2
-4
V
V
1
1.Base 2.Collector 3.Emitter
TO-220F
2
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BDW94CF Rev. A
BDW94CF PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Typical Performance Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
BDW94CF BDW94CF TO-220F - - 50
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
-0.1 -1 -10 -100
100
1k
10k
100k
V
CE
= -3V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.1
-1
-10
I
C
= 250 I
B
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.0 -0.8 -1.6 -2.4 -3.2 -4.0
-0
-4
-8
-12
-16
-20
V
CE
= -3V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
f=1MHz
I
E
=0
C
ob
[pF], CAPACTIANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
3
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BDW94CF Rev. A
BDW94CF PNP Epitaxial Silicon Transistor
Mechanical Dimensions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
BDW94CF PNP Epitaxial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I16
BDW94CF PNP Epitaxial Silicon Transistor
4
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BDW94CF Rev. A
