IXTT40N50L2 - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 500 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 40 A

IDM TC= 25°C, pulse width limited by TJM 80 A

IATC= 25°C 40 A

EAS TC= 25°C 2 J

PDTC= 25°C 540 W

TJ -55 to +150 °C

TJM +150 °C

Tstg -55 to +150 °C

TL1.6mm (0.063in) from case for 10s 300 °C

TSOLD Plastic body for 10s 260 °C

MdMounting torque (TO-247&TO-3P) 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

TO-3P 5.5 g

TO-268 4.0 g

N-Channel Enhancement Mode

Avalanche rated

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 500 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS 50 μA

VGS = 0V TJ = 125°C 300 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 170 mΩ

Linear L2TM Power

MOSFET with extended

FBSOA

IXTH40N50L2

IXTQ40N50L2

IXTT40N50L2

DS100100(01/09)

VDSS = 500V

ID25 = 40A

RDS(on) ≤≤

≤≤

≤ 170mΩΩ

ΩΩ

Ω

Features

zDesigned for linear operation

zInternational standard packages

zAvalanche rated

zMolding epoxies meet UL 94 V-0

flammability classification

zGuaranteed FBSOA at 75°C

Applications

zSolid state circuit breakers

zSoft start controls

zLinear amplifiers

zProgrammable loads

zCurrent regulators

Preliminary Technical Information

G = Gate D = Drain

S = Source TAB = Drain

TO-247

TO-3P

DS

G

TO-268

GS

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH40N50L2 IXTQ40N50L2

IXTT40N50L2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 11 15 19 S

Ciss 10.4 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 655 pF

Crss 155 pF

td(on) 50 ns

tr 133 ns

td(off) 127 ns

tf 44 ns

Qg(on) 320 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 64 nC

Qgd 198 nC

RthJC 0.23 °C/W

RthCS (TO-247&TO-3P) 0.25 °C/W

Safe Operating Area Specification

Symbol Test Conditions Min. Typ. Max.

SOA VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s 320 W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0V 40 A

ISM Repetitive, pulse width limited by TJM 160 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr IF = IS, -di/dt = 100A/μs, VR = 100V 500 ns

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-247 (IXTH) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2Ω (External)

e

∅ P

1 2 3

TO-268 (IXTT) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-3P (IXTQ) Outline

IXTH40N50L2 IXTQ40N50L2

IXTT40N50L2

Fig. 1. Ou tp u t C h aracteri sti cs

@ 25ºC

0

5

10

15

20

25

30

35

40

012345678

V

DS

- Vo lt s

I

D

- A mp ere s

V

GS

= 20V

12V

10V

7

V

6V

8

V

9

V

5

V

Fig. 2. Extended Output Characteristics

@ 25º C

0

10

20

30

40

50

60

70

80

90

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- A mp ere s

V

GS

= 20V

12V

10V

9V

7

V

6

V

5

V

8

V

Fi g . 3. Ou tp u t C h ar acter i stic s

@ 125ºC

0

5

10

15

20

25

30

35

40

0246810121416

V

DS

- Volts

I

D

- A m p ere s

V

GS

= 20V

12V

10V

9V

5

V

7V

6V

8V

Fig. 4. RDS(on) Normalized to ID = 20A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- N orma lize d

V

GS

= 10V

I

D

= 40A

I

D

= 20A

Fig. 5. RDS(on) Normalized to ID = 20A Value

vs. D r ain C u r r en t

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 102030405060708090

I

D

- Amperes

R

DS(on)

- N orma lize d

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maximum Dr ai n C ur r en t vs.

Case Temp eratu re

0

5

10

15

20

25

30

35

40

45

-50 -25 0 25 50 75 100 125 150

T

C

- Deg rees Centigrade

I

D

- A m p ere s

IXYS REF: T_40N50L2(8R)01-20-09-A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH40N50L2 IXTQ40N50L2

IXTT40N50L2

Fi g . 7. I n p u t Admi ttan ce

0

10

20

30

40

50

60

70

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

V

GS

- Volts

I

D

- A mpe re s

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

3

6

9

12

15

18

21

24

27

30

33

36

0 10203040506070

I

D

- Amp e re s

g

f s

- S iemen s

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of

In tr in si c Di o de

0

10

20

30

40

50

60

70

80

90

100

110

120

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

V

SD

- Volts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300 350 400 450

Q

G

- NanoCoulom bs

V

GS

- V o lt s

V

DS

= 250V

I

D

= 20A

I

G

= 10mA

Fi g . 11. C ap aci tan ce

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maxi mu m Tr an si ent Ther mal

Impedance

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTH40N50L2 IXTQ40N50L2

IXTT40N50L2

IXYS REF: T_40N50L2(8R)01-20-09-A

Fi g . 13. F o r war d-B i as Safe Op er atin g Area

@ T

C

= 25ºC

0

1

10

100

10 100 1000

V

DS

- Volt s

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

100ms

Fig. 14. Forward-Bias Safe Operating Area

@ T

C

= 75ºC

0

1

10

100

10 100 1000

V

DS

- V olt s

I

D

- Am peres

T

J

= 150ºC

T

C

= 75ºC

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

DC 100ms