Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 VDSS ID25 = 500V = 40A 170m RDS(on) N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 40 A IDM TC = 25C, pulse width limited by TJM 80 A IA TC = 25C 40 A EAS TC = 25C 2 J PD TC = 25C 540 W -55 to +150 C TJ TJM +150 C Tstg -55 to +150 C TL 1.6mm (0.063in) from case for 10s 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque (TO-247&TO-3P) 1.13/10 Nm/lb.in. Weight TO-247 TO-3P TO-268 6.0 5.5 4.0 g g g (TAB) TO-3P G D S (TAB) TO-268 G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z Characteristic Values Min. Typ. Max. TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 z V z 4.5 V 100 nA Applications 50 A A z 300 170 m z z z z (c) 2009 IXYS CORPORATION, All rights reserved Designed for linear operation International standard packages Avalanche rated Molding epoxies meet UL 94 V-0 flammability classification Guaranteed FBSOA at 75C Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators DS100100(01/09) IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 11 VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) Qg(on) Qgs S nF 655 pF 155 pF 50 ns 133 ns 127 ns 44 ns 320 nC 64 nC 198 nC VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.23 C/W RthJC RthCS 19 10.4 Ciss Coss 15 TO-247 (IXTH) Outline (TO-247&TO-3P) C/W 0.25 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400V, ID = 0.8A, TC = 75C, tp = 3s 320 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM Typ. Max. W Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 A Repetitive, pulse width limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/s, VR = 100V 500 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline ns Note 1: Pulse test, t 300s; duty cycle, d 2%. TO-268 (IXTT) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 40 90 VGS = 20V 12V 10V 35 9V 70 25 ID - Amperes 30 ID - Amperes VGS = 20V 12V 10V 9V 80 8V 20 15 7V 10 6V 5 60 50 8V 40 30 7V 20 6V 10 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 40 2.8 VGS = 20V 12V 10V 9V 30 2.6 VGS = 10V 2.4 RDS(on) - Normalized 35 8V ID - Amperes 15 VDS - Volts VDS - Volts 25 20 7V 15 10 2.2 I D = 40A 2.0 1.8 I D = 20A 1.6 1.4 1.2 1.0 6V 0.8 5 0.6 5V 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 45 3.0 VGS = 10V 2.8 TJ = 125C 40 2.6 35 2.4 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 30 25 20 15 1.4 10 TJ = 25C 1.2 5 1.0 0.8 0 0 10 20 30 40 50 ID - Amperes (c) 2009 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: T_40N50L2(8R)01-20-09-A IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 Fig. 8. Transconductance Fig. 7. Input Admittance 36 70 TJ = - 40C 33 60 30 25C 27 g f s - Siemens ID - Amperes 50 TJ = 125C 25C - 40C 40 30 24 125C 21 18 15 12 20 9 6 10 3 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 Fig. 10. Gate Charge 16 120 110 VDS = 250V 14 I D = 20A 100 I G = 10mA 12 90 80 VGS - Volts IS - Amperes 40 ID - Amperes 70 60 50 40 10 8 6 TJ = 125C 4 30 TJ = 25C 20 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Ciss Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 100 100 RDS(on) Limit RDS(on) Limit 25s 25s 100s 100s 10 10 ID - Amperes ID - Amperes 1ms 10ms 100ms 1 1ms 10ms 1 DC 100ms DC TJ = 150C TJ = 150C TC = 25C TC = 75C Single Pulse Single Pulse 0 0 10 100 VDS - Volts (c) 2009 IXYS CORPORATION, All rights reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_40N50L2(8R)01-20-09-A