Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 3 1Publication Order Number:
MMBT4403LT1/D
MMBT4403LT1
Switching Transistor
PNP Silicon
Features
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc
Collector−Base Voltage VCBO −40 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318−08
STYLE 6
12
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
COLLECTOR
3
1
BASE
2
EMITTER
2T = Specific Device Code
D = Date Code
MARKING DIAGRAM
2T D
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc
Collector−Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc
Base Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV − −0.1 Adc
Collector Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX − −0.1 Adc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc) (Note 3)
(IC = −500 mAdc, VCE = −2.0 Vdc) (Note 3)
hFE 30
60
100
100
20
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat) −
−−0.4
−0.75
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −0.75
−−0.95
−1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT200 − MHz
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF
Emitter−Base Capacitance
(VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 k
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500 −
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = −30 Vdc, VEB = −2.0 Vdc, td− 15
ns
Rise Time
(VCC
30
Vdc
,
VEB
2
.
0
Vdc
,
IC = −150 mAdc, IB1 = −15 mAdc) tr− 20 ns
Storage Time (VCC = −30 Vdc, IC = −150 mAdc, ts− 225
ns
Fall Time
(VCC
30
Vdc
,
IC
150
mAdc
,
IB1 = IB2 = −15 mAdc) tf− 30 ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
MMBT4403LT1
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ORDERING INFORMATION
Device Package Shipping†
MMBT4403LT1 SOT−23 (TO−236) 3000 Tape & Reel
MMBT4403LT1G SOT−23 (TO−236)
(Pb−Free) 3000 Tape & Reel
MMBT4403LT3 SOT−23 (TO−236) 10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
−16 V 10 to 100 s,
DUTY CYCLE = 2%
0
1.0 k
−30 V
200
CS* < 10 pF 1.0 k
−30 V
200
CS* < 10 pF
+4.0 V
< 2 ns
1.0 to 100 s,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
−16 V
MMBT4403LT1
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Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10 20
2.0
30
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Ceb
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
ts, STORAGE TIME (ns)
′
t, TIME (ns)
Ccb
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
10 20 50 70 100 200 300 500
30
100
20
70
50
200
0.7 7.0
30
tr, RISE TIME (ns)
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts′ = ts − 1/8 tf
MMBT4403LT1
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5
6
8
10
0
4
2
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
RS = OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 A
100 A
500 A
1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
300
700
30
200
100
1000
hfe, CURRENT GAIN
hie, INPUT IMPEDANCE (OHMS)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100k
100
50
5.0 7.0
20k
10k
5k
2k
1k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.1
20
Figure 13. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
−4
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
500
70
50k
500
200
10
100
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1
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6
STATIC CHARACTERISTICS
Figure 14. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
0
1.00.7 5.0 7.0
CE
IC = 1.0 mA
0.070.050.030.020.01
10 mA 100 mA
10 20 30
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50 70
0.2 0.3
0.2
100
1.00.7 500
30205.0 7.0
FE
TJ = 125°C
−55 °C
2.0
200 300
25°C
VCE = 1.0 V
VCE = 10 V
Figure 16. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
0.5
0
0.5
1.0
1.5
2.0
500
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(sat) @ VCE = 10 V
VC for VCE(sat)
VS for VBE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)°
2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
500 mA
0.005
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PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
SOT−23
2.0
0.079
CASE 318−08
SOT−23 (TO−236)
ISSUE AH
MMBT4403LT1
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MMBT4403LT1/D
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