VS-16TTS..SPbF Series
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Revision: 19-Jun-13 1Document Number: 94589
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Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-16TTS..SPbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
Diode variation Single SCR
IT(AV) 10 A
VDRM/VRRM 800 V, 1200 V
VTM 1.4 V
IGT 60 mA
TJ- 40 °C to 125 °C
3
Gate
2
Anode
1
Cathode
TO-263AB (D
2
PAK)
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper 2.5 3.5
A
Aluminum IMS, RthCA = 15 °C/W 6.3 9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) Sinusoidal waveform 10 A
IRMS 16
VRRM/VDRM 800/1200 V
ITSM 200 A
VT10 A, TJ = 25 °C 1.4 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-16TTS08SPbF 800 800 10
VS-16TTS12SPbF 1200 1200
VS-16TTS..SPbF Series
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Revision: 19-Jun-13 2Document Number: 94589
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 98 °C, 180° conduction, half sine wave 10
A
Maximum RMS on-state current IRMS 16
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 144 A2s
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2000 A2s
Maximum on-state voltage drop VTM 10 A, TJ = 25 °C 1.4 V
On-state slope resistance rtTJ = 125 °C 24.0 m
Threshold voltage VT(TO) 1.1 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IH
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C - 150
Maximum latching current ILAnode supply = 6 V, resistive load,TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ max. linear to 80 % VDRM = Rg - k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
mAAnode supply = 6 V, resistive load, TJ = 25 °C 60
Anode supply = 6 V, resistive load, TJ = 125 °C 35
Maximum required DC gate voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
μsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-16TTS..SPbF Series
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Revision: 19-Jun-13 3Document Number: 94589
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Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 260
Maximum thermal resistance,
junction to case RthJC DC operation 1.3
°C/W
Typical thermal resistance,
junction to ambient RthJA PCB mount (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220) 16TTS08S
16TTS12S
90
95
100
105
110
115
120
125
024681012
30°
60° 90°
120°
180°
Conduction Angle
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
16TTS.. Series
R (DC) = 1.3 °C/W
thJC
90
95
100
105
110
115
120
125
0246810121416
DC
30° 60°
90°
120° 180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 °C/W
thJC
0
2
4
6
8
10
12
14
16
18
01234567891011
RMS Limit
180°
120°
90°
60°
30°
Cond uc tion An gle
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
16TTS.. Series
T = 125°C
J
0
5
10
15
20
25
024681012141618
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Average On-state Current (A)
Max imum Average On-state Power Loss (W)
16TTS.. Series
T = 125°C
J
VS-16TTS..SPbF Series
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Revision: 19-Jun-13 4Document Number: 94589
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
80
100
120
140
160
180
110100
Numb er Of Equa l Amplitude H alf Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Peak Half Sine Wave On-state Current (A)
16TTS..Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS.. Series
1
10
100
1000
012345
T = 25°C
J
T = 125°C
J
Instantaneous On-state Voltage (V)
Instantaneous On-s tate Current (A)
16TTS.. Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Steady State Value
(DC Operation)
16TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedance Z (°C/W)
VS-16TTS..SPbF Series
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Revision: 19-Jun-13 5Document Number: 94589
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16TTS08SPbF 50 1000 Antistatic plastic tubes
VS-16TTS08STRRPbF 800 800 13" diameter reel
VS-16TTS08STRLPbF 800 800 13" diameter reel
VS-16TTS12SPbF 50 1000 Antistatic plastic tubes
VS-16TTS12STRRPbF 800 800 13" diameter reel
VS-16TTS12STRLPbF 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Curren t (A)
Instantaneous Gate Voltage (V)
TJ = 25
°C
TJ = 125 °C
b)Recommended load line for
VGD
IGD Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = -10 °C
16TTS.. Series
08 = 800 V
12 = 1200 V
-
1-Vishay Semiconductors product
2- Current rating
3- Circuit configuration:
4- Package:
-PbF = Lead (Pb)-free and RoHS compliant
5
6- Voltage rating: Voltage code x 100 = VRRM
T = Single thyristor
- Type of silicon:
T = TO-220AC
S = Standard recovery rectifier
9
7- S = D2PAK version
8None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
Device code
51 32 4 6 7 8 9
VS- 16 T T S 12 S TRL PbF
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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