SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 1Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Typical ESD Protection: 2000 V (HBM)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- DC/DC Converter
- Battery Switch
- Load Switch
- Power Management
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.) ID (A)aQg (Typ.)
- 20
0.0350 at VGS = - 4.5 V - 9
10 nC0.0395 at VGS = - 3.7 V - 9
0.0620 at VGS = - 2.5 V - 9
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
Ordering Information:
SiA459EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
S
D
G
Marking Code
X X X
B 3 X
Lot Traceability
and Date code
Part # code
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 9a
A
TC = 70 °C - 9a
TA = 25 °C - 7.4b, c
TA = 70 °C - 6b, c
Pulsed Drain Current (t = 100 μs) IDM - 40
Continuous Source-Drain Diode Current TC = 25 °C IS
- 9a
TA = 25 °C - 2.4b, c
Maximum Power Dissipation
TC = 25 °C
PD
15.6
W
TC = 70 °C 10
TA = 25 °C 2.9b, c
TA = 70 °C 1.8b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t 5 s RthJA 32 43 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 68
SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 2Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 20 V
VDS Temperature Coefficient VDS/TJID = - 250 μA - 12 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ2.2
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 0.6 - 1.2 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 10
μA
VDS = 0 V, VGS = ± 4.5 V ± 0.5
Zero Gate Voltage Drain Current IDSS
VDS = - 20 V, VGS = 0 V - 1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) VDS - 5 V, VGS = - 4.5 V - 10 A
Drain-Source On-State Resistancea R
DS(on)
VGS = - 4.5 V, ID = - 5 A 0.0280 0.0350
VGS = - 3.7 V, ID = - 5 A 0.0310 0.0395
VGS = - 2.5 V, ID = - 2 A 0.0450 0.0620
Forward Transconductanceagfs VGS = - 10 V, ID = - 5 A 15 S
Dynamicb
Input Capacitance Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
885
pFOutput Capacitance Coss 155
Reverse Transfer Capacitance Crss 140
Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 5 A 20 30
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
10 15
Gate-Source Charge Qgs 1.6
Gate-Drain Charge Qgd 2.9
Gate Resistance Rgf = 1 MHz 2.2 11 22
Turn-On Delay Time td(on)
VDD = - 10 V, RL = 1.67
ID - 6 A, VGEN = - 4.5 V, Rg = 1
20 40
ns
Rise Time tr 25 50
Turn-Off Delay Time td(off) 40 80
Fall Time tf 20 40
Turn-On Delay Time td(on)
VDD = - 10 V, RL = 1.67
ID - 6 A, VGEN = - 10 V, Rg = 1
715
Rise Time tr 10 20
Turn-Off Delay Time td(off) 40 80
Fall Time tf 20 40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 9 A
Pulse Diode Forward Current ISM - 40
Body Diode Voltage VSD IS = - 6 A, VGS = 0 V - 0.9 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 6 A, dI/dt = 100 A/μs,
TJ = 25 °C
21 35 ns
Body Diode Reverse Recovery Charge Qrr 920nC
Reverse Recovery Fall Time ta7ns
Reverse Recovery Rise Time tb14
SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 3Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Current vs. Gate-to-Source Voltage
Transfer Characteristics
Capacitance
0.00
4.00
8.00
12.00
16.00
20.00
0 3 6 9 12 15 18
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 2 V
VGS = 2.5 V
VGS = 3 V
V
GS = 5 V thru 3.5 V
V
GS
= 1.5 V
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0 10 20 30 40
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 4.5 V
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
0 3 6 9 12 15 18
IGSS - Gate Current (A)
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
0.0 0.3 0.6 0.9 1.2 1.5 1.8
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
T
C
= 125
°
C
T
C
= - 55
°
C
0
300
600
900
1200
1500
0 4 8 12 16 20
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
Coss
C
rss
SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 4Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Soure-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
D
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.40
0.50
0.60
0.70
0.80
0.90
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V, 3.7 V
ID = 5 A
VGS = 2.5 V
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0 1 2 3 4 5
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 5 A
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 5Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating* Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 ms
1 s
IDM Limited
100 µs
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
DC
0
4
8
12
16
20
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
0.00
4.00
8.00
12.00
16.00
25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
SiA459EDJ
www.vishay.com Vishay Siliconix
S13-2182-Rev. A, 14-Oct-13 6Document Number: 62912
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62912.
10
-3
10
-2
110 100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
10
-3
10
-2
10
-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10
-1
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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