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07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP2450
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 TO-243AA* Die
-500V 30Ω-0.2A VP2450N3 VP2450N8 VP2450ND
Ordering Information
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
TO-243AA
(SOT-89)
G D
S
D
Product marking for TO-243AA:
VP4E❋
Where ❋ = 2-week alpha date code
2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 -0.1A -0.3A 1W 125 170 -0.1A -0.3A
TO-243AA -0.16A -0.80A 1.6W†15 78 -0.16A -0.80A
*ID (continuous) is limited by max rated Tj.
†Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
90%
10%
90%
90%
10% 10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BVDSS -500
VGS(th) Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1mA
∆VGS(th) Change in VGS(th) with Temperature -4.8 mV/°CV
GS = VDS, ID = -1mA
IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 µAV
GS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -75 VGS = -4.5V, VDS = -15V
-200 VGS = -10V, VDS = -15V
RDS(ON) 35 VGS = -4.5V, ID = -50mA
30 VGS = -10V, ID = -100mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/°CV
GS = -10V, ID = -100mA
GFS Forward Transconductance 150 320 m VDS = -15V, ID = -100mA
CISS Input Capacitance 190
COSS Common Source Output Capacitance 75 pF
CRSS Reverse Transfer Capacitance 20
td(ON) Turn-ON Delay Time 10
trRise Time 25
td(OFF) Turn-OFF Delay Time 45
tfFall Time 25
VSD Diode Forward Voltage Drop -1.8 V VGS = 0V, ISD = -100mA
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = -100mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
-1 mA
VV
GS = 0V, ID = -250µA
VGS = 0V, VDS =- 25V
f = 1 MHz
VDD = -25V
ns ID = -200mA
RGEN = 25Ω
Ω
Ω
VP2450
3
Typical Performance Curves
ID(Amperes)
VDS (Volts)
Output Characteristics
0-2-4-6-8-10
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
Saturation Characteristics
ID(Amperes)
VDS (Volts)
GFS (Siemens)
ID(Milliamperes)
Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature
PD (Watts)
TA(¡C)
Maximum Rated Safe Operating Area
ID(amperes)
VDS (Volts)
Thermal Response Characteristics
Thermal Resistance (normalized)
tp(seconds)
-1 -1000-100-10
0 -10 -20 -30 -40 -50
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0 -100 -200 -300 -400 -500
0.0
0.2
0.4
0.6
0.8
1.0
VDS=-20V
TA=-55¡C
TA=25¡C
TA=125¡C
0255075100 125 150
0.0
0.5
1.0
1.5
2.0
TO-243AA
TO-92
TO-243AA (DC)
TO-243AA (pulsed)
TA=25¡C
TO-92 (pulsed)
-0.001
-0.01
-0.1
-1.0
TO-92 (DC)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1
TO-243AA
TA=25
°
C
PD=1.6W
TO-92
PD=1W
TC=25
°
C
VGS=-10V
VGS=-6.0V
VGS=-4.5V
VGS=-3.5V
VGS = -10V
VGS =-3.5V
VGS = -4.5V
VGS = -6.0V
VP2450
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
07/08/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
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VP2450
