IXTC102N20T - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 250 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 50 A

IDM TC= 25°C, Pulse Width Limited by TJM 300 A

IATC= 25°C 25A

EAS TC= 25°C 1J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 180 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

VISOL 50/60 Hz, 1 Minute 2500 V∼

FCMounting Force 11..65/2.5..14.6 N/lb.

Weight 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 250 V

VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V

IGSS VGS = ±20V, VDS = 0V ±200 nA

IDSS VDS = VDSS, VGS = 0V 5 μA

TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 55A, Notes 1, 2 27 mΩ

IXTC110N25T

DS99841C(05/12)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Avalanche Rated

Features

zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

zIsolated Mounting Surface

zInternational Standard Package

z2500V~ Electrical Isolation

zFast Intrinsic Rectifier

zAvalanche Rated

zLow RDS(on)

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zAC Moter Drives

zUninterruptible Power Supplies

(Electrically Isolated Tab)

TrenchTM

Power MOSFETs

VDSS = 250V

ID25 = 50A

RDS(on) ≤≤

≤≤

≤ 27mΩΩ

ΩΩ

Ω

ISOPLUS220

E153432

G = Gate D = Drain

S = Source

GDSIsolated Tab

IXTC110N25T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 55A, Note 1 65 110 S

Ciss 9400 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 850 pF

Crss 55 pF

td(on) 19 ns

tr 27 ns

td(off) 60 ns

tf 27 ns

Qg(on) 157 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 40 nC

Qgd 50 nC

RthJC 0.69 °C/W

RthCS 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 110 A

ISM Repetitive, Pulse Width Limited by TJM 350 A

VSD IF = 55A, VGS = 0V, Note 1 1.2 V

trr 170 ns

IRM 27 A

QRM 2.3 μC

IF = 55A, -di/dt = 250A/μs

VR = 100V, VGS = 0V

Resistive Switching Times

VGS = 15V, VDS = 0.5 • VDSS, ID = 55A

RG = 2Ω (External)

Note: Bottom heatsink (Pin 4) is

electrically isolated from Pins 1,2, & 3.

1.Gate 2. Drain

3.Source 4. Isolated

ISOPLUS220 (IXTC) Outline

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. On through-hole package, RDS(ON) kelvin test contact location must be

5mm or less from the package body.

IXTC110N25T

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

0

20

40

60

80

100

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

5.5V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

0

20

40

60

80

100

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Valu e vs.

Junction T emperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Valu e vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 50 100 150 200 250

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maxi mum D r ain Cu rrent vs.

Case Temperatu r e

0

10

20

30

40

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTC110N25T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Ad mittance

0

20

40

60

80

100

120

140

160

3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

20

40

60

80

100

120

140

160

180

0 20 40 60 80 100 120 140 160

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

50

100

150

200

250

300

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate C h arge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 125V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximu m Tran si ent Ther mal I mped a n ce

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTC110N25T

Fi g . 14. R esi sti ve Tu r n- o n

Ri se Ti me vs. Dr ai n C u r re n t

18

20

22

24

26

28

30

32

20 30 40 50 60 70 80 90 100 110 120

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 2, V

GS

= 15V

V

DS

= 125V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resisti ve Turn -o n

Switch i n g Ti mes vs. Gate Resi st ance

20

25

30

35

40

45

50

2345678910

R

G

- Ohms

t

r

- Nanoseconds

19

21

23

25

27

29

31

t

d

(

o n

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V

I

D

= 110A, 55A

Fig. 16. R esi s tive Tur n -off

Switch i ng Ti mes vs. J u nctio n Temperatu r e

14

18

22

26

30

34

38

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

50

54

58

62

66

70

74

t d

(

o f f

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2, V

GS

= 15V

V

DS

= 125V

I

D

= 55A

I

D

= 110A

Fi g . 17. R esi sti ve Tu r n -o ff

Swit chi n g Ti mes vs. Drain C u rr en t

20

22

24

26

28

30

32

20 30 40 50 60 70 80 90 100 110 120

I

D

- Amperes

t

f - Nanoseconds

40

50

60

70

80

90

100

t d

(

o f f

)

- Nanoseconds

t

f

t

d(off

)

- - - -

R

G

= 2, V

GS

= 15V

V

DS

= 125V

T

J

= 25ºC

T

J

= 125ºC

T

J

= 125ºC

T

J

= 25ºC

Fig. 13. Resisti v e Tu rn-o n

Ri se Ti me vs. Jun ct io n Temper atu r e

20

22

24

26

28

30

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 2, V

GS

= 15V

V

DS

= 125V

I

D

= 110A

I

D

= 55A

Fi g . 18. R esi sti ve Tu rn - of f

Switch ing Ti mes vs. Gate Resistan ce

10

30

50

70

90

110

2345678910

R

G

- Ohms

t

f - Nanoseconds

40

80

120

160

200

240

t d

(

o f f

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V

I

D

= 55A, 110A