HYMP512P72CP4L-C4 - SK Hynix

This document is a general product description and is subject t o change without notice. Hynix Semiconductor do es not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.2 / Sep. 2008 1

240pin DDR2 VLP Registerd DIMMs based on 512 Mb C ver.

This Hynix DDR2 VLP (Very Low Profile) registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C

ver. DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb C

ver. based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of

industry standard. It is suitable for easy interchange and addition.

ORDERING INFORMATION

Note:

1. “P” of part number[12th digit] stands for Lead free products.

SPEED GRADE & KEY PARAMETERS

Part Name Density Org. Component Configuration Ranks Parity

Support

HYMP564P72CP8L-C4/Y5 512MB 64Mx72 64Mx8(HY5PS12821CFP)*9 1 O

HYMP512P72CP4L-C4/Y5 1GB 128Mx72 128Mx4(HY5PS12421CFP)*18 1 O

C4 (DDR2-533) Y5 (DDR2-667) Unit

Speed@CL3 400 400 Mbps

Speed@CL4 533 533 Mbps

Speed@CL5 - 667 Mbps

CL-tRCD-tRP 4-4-4 5-5-5 tCK

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

FEATURES

ADDRESS TABLE

Density Organization Ranks SDRAMs # of

DRAMs # of row/bank/column Address Refresh

Method

512MB 64M x 72 1 64Mb x 8 9 14(A0~A13)/2(BA0~BA1)/10(A0~A9) 8K / 64ms

1GB 128M x 72 1 128Mb x 4 18 14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms

• JEDEC standard 1.8V +/- 0.1V Power Supply

•V

DDQ: 1.8V +/- 0.1V

• All inputs and outputs are compatible with SSTL_1.8 interface

•4 Bank architecture

•Posted CAS

• Programmable CAS Latency 3, 4, 5

• OCD (Off-Chip Driver Impedance Adjustment)

•ODT (On-Die Termination)

• Fully differential clock operations (CK & CK)

• Programmable Burst Length 4 / 8 with both sequential and interleave mode

• Average Auto Refresh Period 7.8us under TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95 ℃

• High Temperature Self-Refresh Entry enable features

• PASR (Partial Array Self- Refresh)

• 8192 refresh cycles / 64ms

• Serial presence detect with EEPROM

• DDR2 SDRAM Package: 60ball FBGA

• 133.35 x 18.29 mm form factor

• Lead-free Products are RoHS compliant

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

Input/Output Functional Description

Symbol Type Polarity Pin Description

CK0 IN Positive

Edge Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.

CK0IN

Negative

Edge Negative li ne of the dif feren tial pair of s ystem cloc k inputs th at drives i nput to the on -DIMM PLL.

CKE[1:0] IN Active

High Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low.

By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.

S[1:0] IN Active

Low

Enables the associated DDR2 SDRAM command decoder when low and disables the command

decoder when high. When the command decoder is disabled, new commands are ignored but

previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1

ODT[1:0] IN Active

High On-Die Termination signals.

RAS, CAS, WE IN Active

Low When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define

the command being entered.

Vref Supply Reference voltage for SSTL18 inputs

VDDQ Supply Power supplies for the DDR2 SDRAM output buff ers to pr ovid e impr ov ed no ise immunity. For all

current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins.

BA[1:0] IN - Selects which DDR2 SDRAM internal bank of four is activated.

A[9:0],

A10/AP

A[13:11] IN -

During a Bank Activate comman d cycl e, Ad dress input defines the row address(RA0~RA13)

During a Read or Write command cycle, Address input defines the column address when sam-

pled at the cross po int of the risin g edge of CK and fa lling edge of CK . In addition to the column

address, AP is used to invoke autoprecharge operation at the end of the burst read or write

cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be pr echarged.

If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in con-

junction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pre-

charged r egardless of t he state of BA0-BAn inputs. If AP is low , then BA0-BAn ar e used to de fine

which bank to precharge.

DQ[63:0],

CB[7:0] IN - Data and Check Bit Input/Output pi ns.

DM[8:0] IN Active

High

DM is an input mask signal for write data. Input data is masked when DM is sampled High coin-

cident with that input data durin g a write access. DM is sampled on both edges of DQS.

Although DM pins are input only, the DM loading matches the DQ and DQS loading.

VDD,VSS Supply Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are

tied to VDD/VDDQ planes on these modules.

DQS[17:0] I/O Positive

Edge Positive line of the differential data strobe for input and output data

DQS[17:0] I/O Negative

Edge Negative line of the differential data strobe for input and output data

SA[2:0] IN - These signals are tied at the system planar to either VSS or VDDSPD to configure the seri al SPD

EEPROM address range.

SDA I/O - This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may

be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up.

SCL IN - This signal is used to cloc k data into and out of the SPD EEPROM. A resistor may be connected

from SCL to VDDSPD to act as a pull up on the system board.

VDDSPD Supply Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane.

EEPROM supply is operable from 1.7V to 3.6V.

RESET IN The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When

low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will

be set to low level (the PLL will remain synchronized with the input clock)

Par_In IN Parity bit for the Address and Control bus(“1”. Odd, “0”.Even)

Err_Out OUT Parity error found in the Address and Control bus

TEST Used by memory bus analysis tools (unused on memory DIMMs)

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

PIN DESCRIPTION

PIN LOCATION

Pin Pin Description Pin Pin Description

CK0 Clock Input, positive line ODT[1:0] On Die Termination Inputs

CK0 Clock input , ne gati v e line VDDQ DQs Power Supply

CKE0~CKE1 Clock Enable Input DQ0~DQ63 Data Input/Output

RAS Row Address Strobe CB0~CB7 Data check bits Input/Output

CAS Column Address Strobe DQS(0~8) Data strobes

WE Write Enable DQS(0~8) Data strobes, negative line

S0,S1 Chip Select Input DM(0~8),

DQS(9~17) Data Maskes/Data strobes

A0~A9,

A11~A13 Address input DQS(9~17) Data strobes, negative line

A10/AP Address input/Autoprecharge RFU Reserved for Future Use

BA0,BA1 SDRAM Bank Address NC No Connect

SCL Serial Presence Detect (SPD) Clock Input TEST Memory bus test tool

(Not Connected and Not Usable on DIMMs)

SDA SPD Data Input/Output VDD Core Power

SA0~SA2 E2PROM Address Inputs VDDQ I/O Power

Par_In Parity bit for the Address and Control bus VSS Ground

Err_Out Parity error found on the Address VREF Input/Output Reference

RESET Reset Enable VDDSPD SPD Power

CB0~CB7 Data Check bit Inputs/Outputs

1 pin

Front Side

64 pin 65 pin 1 20 pin

121 pin

Back Side

184 pin 185 pin 240 pin

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

PIN ASSIGNMENT

NC= No Connect, RFU= Reserved for Future Use.

Note:

1. RESET (Pin 18) is connected to both OE of PLL and Reset of register.

2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.

3. The Test pin (Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules

(DIMMs)

Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name

1 VREF 41 VSS 81 DQ33 121 VSS 161 CB4 201 VSS

2 VSS 42 CB0 82 VSS 122 DQ4 162 CB5 202 DM4/DQS13

3DQ043CB183DQS

4 123 DQ5 163 VSS 203 DQS13

4 DQ1 44 VSS 84 DQS4 124 VSS 164 DM8,DQS17 204 VSS

5VSS45DQS

8 85 VSS 125 DM0/DQS9 165 DQS17 205 DQ38

6DQS

046DQS886DQ34126DQS9 166 VSS 206 DQ39

7 DQS0 47 VSS 87 DQ35 127 VSS 167 CB6 207 VSS

8 VSS 48 CB2 88 VSS 128 DQ6 168 CB7 208 DQ44

9 DQ2 49 CB3 89 DQ40 129 DQ7 169 VSS 209 DQ45

10 DQ3 50 VSS 90 DQ41 130 VSS 170 VDDQ 210 VSS

11 VSS 51 VDDQ 91 VSS 131 DQ12 171 NC,CKE1 211 DM5/DQS14

12 DQ8 52 CKE0 92 DQS5 132 DQ13 172 VDD 212 DQS14

13 DQ9 53 VDD 93 DQS5 133 VSS 173 A15,NC 213 VSS

14 VSS 54 BA2,NC 94 VSS 134 DM1/DQS10 174 A14,NC 214 DQ46

15 DQS155NC, Err_Out95 DQ42 135 DQS10 175 VDDQ 215 DQ47

16 DQS1 56 VDDQ 96 DQ43 136 VSS 176 A12 216 VSS

17 VSS 57 A11 97 VSS 137 RFU 177 A9 217 DQ52

18 RESET 58 A7 98 DQ48 138 RFU 178 VDD 218 DQ53

19 NC 59 VDD 99 DQ49 139 VSS 179 A8 219 VSS

20 VSS 60 A5 100 VSS 140 DQ14 180 A6 220 RFU

21 DQ10 61 A4 101 SA2 141 DQ15 181 VDDQ 221 RFU

22 DQ11 62 VDDQ 102 NC(TEST) 142 VSS 182 A3 222 VSS

23 VSS 63 A2 103 VSS 143 DQ20 183 A1 223 DM6/DQS15

24 DQ16 64 VDD 104 DQS6 144 DQ21 184 VDD 224 NC,DQS15

25 DQ17 Key 105 DQS6 145 VSS Key 225 VSS

26 VSS 65 VSS 106 VSS 146 DM2/DQS11 185 CK0 226 DQ54

27 DQS266 VSS107DQ50147DQS11 186 CK0 227 DQ55

28 DQS2 67 VDD 108 DQ51 148 VSS 187 VDD 228 VSS

29 VSS 68 NC, Err_Out 109 VSS 149 DQ22 188 A0 229 DQ60

30 DQ18 69 VDD 110 DQ56 150 DQ23 189 VDD 230 DQ61

31 DQ19 70 A10/AP 111 DQ57 151 VSS 190 BA1 231 VSS

32 VSS 71 BA0 112 VSS 152 DQ28 191 VDDQ 232 DM7/DQS16

33 DQ24 72 VDDQ 113 DQS7 153 DQ29 192 RAS 233 NC,DQS16

34 DQ25 73 WE 114 DQS7 154 VSS 193 S0 234 VSS

35 VSS 74 CAS 115 VSS 155 DM3/DQS12 194 VDDQ 235 DQ62

36 DQS3 75 VDDQ 116 DQ58 156 DQS12 195 ODT0 236 DQ63

37 DQS3 76 NC, S1 117 DQ59 157 VSS 196 A13,NC 237 VSS

38 VSS 77 NC, ODT1 118 VSS 158 DQ30 197 VDD 238 VDDSPD

39 DQ26 78 VDDQ 119 SDA 159 DQ31 198 VSS 239 SA0

40 DQ27 79 VSS 120 SCL 160 VSS 199 DQ36 240 SA1

80 DQ32 200 DQ37

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

FUNCTIONAL BLOCK DIAGRAM

512MB(64Mbx72): HYMP564P72CP8L

PCK0 to PCK6, PCK8,PCK9 ==> CK: SDRAMs D0 toD8

/PCK0 to /PCK6, /PCK8, /PCK9 ==> /CK: SDRAMs D0 toD8

PCK7 ==> CK: Register

/PCK7 ==> /C K: R egister

CK0

/CK0

/RESET

/RS0

DQ0 I/O 0

DQ1 I/O 1

DQ2 I/O 2

DQ3 I/O 3

DQ4 I/O 4

DQ5 I/O 5

DQ6 I/O 6

I/O 7

DQ7

/DQS0

DM0,DQS9

DQS0

/CS D QS /DQS

RDQS NU

/RDQS

/DQS9

DQ8 I/O 0

DQ9 I/O 1

DQ10 I/O 2

DQ11 I/O 3

DQ12 I/O 4

DQ13 I/O 5

DQ14 I/O 6

I/O 7

DQ15

/DQS1

DM1,DQS10

DQS1

/CS D QS /DQS

RDQS NU

/RDQS

/DQS10

DQ16 I/O 0

DQ17 I/O 1

DQ18 I/O 2

DQ19 I/O 3

DQ20 I/O 4

DQ21 I/O 5

DQ22 I/O 6

I/O 7

DQ23

/DQS2

DM2,DQS11

DQS2

/CS D QS /DQS

RDQS NU

/RDQS

/DQS11

DQ24 I/O 0

DQ25 I/O 1

DQ26 I/O 2

DQ27 I/O 3

DQ28 I/O 4

DQ29 I/O 5

DQ30 I/O 6

I/O 7

DQ31

/DQS3

DM3,DQS12

DQS3

/CS D QS /DQS

RDQS NU

/RDQS

/DQS12

CB0 I/O 0

CB1 I/O 1

CB2 I/O 2

CB3 I/O 3

CB4 I/O 4

CB5 I/O 5

CB6 I/O 6

I/O 7

CB7

/DQS8

DM8DQS17

DQS8

/CS D QS /DQS

RDQS NU

/RDQS

/DQS17

DQ32 I/O 0

DQ33 I/O 1

DQ34 I/O 2

DQ35 I/O 3

DQ36 I/O 4

DQ37 I/O 5

DQ38 I/O 6

I/O 7

DQ39

/DQS4

DM4,DQS13

DQS4

/CS D QS /DQS

RDQS NU

/RDQS

/DQS13

DQ40 I/O 0

DQ41 I/O 1

DQ42 I/O 2

DQ43 I/O 3

DQ44 I/O 4

DQ45 I/O 5

DQ46 I/O 6

I/O 7

DQ47

/DQS5

DM5,DQS14

DQS5

/CS D QS /DQS

RDQS NU

/RDQS

/DQS14

DQ48 I/O 0

DQ49 I/O 1

DQ50 I/O 2

DQ51 I/O 3

DQ52 I/O 4

DQ53 I/O 5

DQ54 I/O 6

I/O 7

DQ55

/DQS6

DM6,DQS15

DQS6

/CS D QS /DQS

RDQS NU

/RDQS

/DQS15

DQ56 I/O 0

DQ57 I/O 1

DQ58 I/O 2

DQ59 I/O 3

DQ60 I/O 4

DQ61 I/O 5

DQ62 I/O 6

I/O 7

DQ63

/DQS7

DM7,DQS16

DQS7

/CS D QS /DQS

RDQS NU

/RDQS

/DQS16

VDD SPD

VDD /

VDDQ

VREF

VSS

Serial PD

DO-D8

SA0 SA1 SA2

SCL SDA

A0 A1 A2

Serial PD

SCL U0 SDA

* : /S0 connects to D/CS and VDD connects to /CSR on register.

ODT0

CKE0

/PCK7

/WE

PCK7

/RESET

/CAS

/RAS

BA0 to BA1

A0 to A13

/CS0*

RODT0 ==> ODT0: SDRAMs D0 to D8

/RWE = = > /WE : S DRA Ms D 0 to D8

RCKE0 ==> CKE: SDRAMs D0 to D8

/RCAS ==>/CAS: SDRAMs D0 to D8

/RRAS ==>/RAS: SDRAMs D0 to D8

/RA0 to RA13 = => A 0 to A 13: S D RAMs D0 to D 8

RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D8

/RS0 to /CS = = > /CS : SDRAMs D0 to D8

/RST

1. Register values are 22 Ohms.

Notes :

PAR_IN PPO

/QERR

VSS

PAR_IN

100K ohms /Err-Out

Signals for Address and Command Parity Function

The resistors on Par_In, A13, A14, A15, BA2 and

the sign a l line of E rr_ O u t re fe r to th e s e c tion:

“Register Options for Unused Address inputs”

VSS

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

FUNCTIONAL BLOCK DIAGRAM

1GB(64Mbx72): HYMP512P72CP4L

/RS0

VSS

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

DQ0

DQ1

DQ2

DQ3

/DQS0

/DQS

DQS0

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS1

/DQS

DQS1

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

DQ16

DQ17

DQ18

DQ19

/DQS2

/DQS

DQS2

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS3

/DQS

DQS3

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS4

/DQS

DQS4

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS5

/DQS

DQS5

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS6

/DQS

DQS6

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS7

/DQS

DQS7

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

CB0

CB1

CB2

CB3

/DQS8

/DQS

DQS8

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

DQ4

DQ5

DQ6

DQ7

/DQS9

/DQS

DQS9

D10

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS10

/DQS

DQS10

D11

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS11

/DQS

DQS11

D12

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS12

/DQS

DQS12

D13

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS13

/DQS

DQS13

D14

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS14

/DQS

DQS14

D15

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS15

/DQS

DQS15

D16

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

/DQS16

/DQS

DQS16

D17

DQS /CS DM

I/O0

I/O1

I/O2

I/O3

CB4

CB5

CB6

CB7

/DQS17

/DQS

DQS17

DQ60

DQ61

DQ62

DQ63

DQ52

DQ53

DQ54

DQ55

DQ44

DQ45

DQ46

DQ47

DQ36

DQ37

DQ38

DQ39

DQ28

DQ29

DQ30

DQ31

DQ20

DQ21

DQ22

DQ23

DQ12

DQ13

DQ14

DQ15

DQ8

DQ9

DQ10

DQ11

DQ24

DQ25

DQ26

DQ27

DQ32

DQ33

DQ34

DQ35

DQ40

DQ41

DQ42

DQ43

DQ48

DQ49

DQ50

DQ51

DQ56

DQ57

DQ58

DQ59

* /S0 connects to D/CS of Register1 and /CSR of Register2. /CSR of register and D/CS of register2 connects to VDD.

** /RESET,PCK7 connect to both Re gisters. Other signals connect to one of two Registers. /S1,CKE1 and ODT1 are NC.

CK0

/CK0

/RESET

PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D17

/PCK0 to /PCK6, /PCK8,/PCK9 = > /CK : SDRAMx D0-D17

PCK7 = > CK: Register

/PCK7 = > /CK: Register

SA0 SA1 SA2

SCL SDA

A0 A1 A2

Serial PD

SCL U0 SDA

VDD SPD

VREF

VDD/VDDQ

VSS

Serial

DO-D17

1. Resistor values are 22 Ohms +/- 5%.

Notes:

ODT0

CKE0

/PCK7

/WE

PCK7

/RESET

/CAS

/RAS

BA0 to BA1

A0 to A13

/CS0*

RODT0 ==> ODT0: SDR AMs D0 to D17

/RWE ==> /WE: SDRAMs D0 to D 17

RCKE0 ==> CKE: SDRAMs D0 to D17

/RCAS ==>/CAS: SDRAMs D0 to D17

/RRAS ==>/RAS: SDRAMs D0 to D17

/RA0 to RA13 ==> A0 to A13: S DRAMs D0 to D17

RBA0 to RBA1 ==> BA0 to BA 1: SD RAMs D0 to D17

/RS0 to /C S = = > /C S : SDR AMs D0 to D17

/RST

C0 A

PAR_IN PPO

/QERR

VSS

VDD

PAR_IN

100K ohms /Err-Out

Signals for Address and Command Parity Function

The resistors on Par_In, A13, A14, A15, BA2 and

the signal line of Err_Out refer to the section:

“Register Options for Unused Address input s”

C0 B

PAR_IN PPO

/QERR

VDD

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

ABSOLUTE MAXIMUM RATINGS

Note:

1. Stress greater than those listed may cause permanent dama ge to the device. This is a stress r ating only, and device

functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con

ditions for extended periods may affect reliablility.

OPERATING CONDITIONS

Note:

1. Up to 9850 ft.

2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to

tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.

DC OPERATING CONDITIONS (SSTL_1.8)

Note:

1. VDDQ must be less than or equal to VDD.

2. Peak to peak ac noise on VREF may not exceed +/-2% VREF(dc)

3. VTT of transmitting device must track VREF of receiving device.

Parameter Symbol Value Unit Note

Voltage on VDD pin relative to Vss VDD - 1.0 V ~ 2.3 V V 1

Voltage on VDDL pin relative to Vss VDDL -0.5V ~ 2.3 V V 1

Voltage on VDDQ pin relative to Vss VDDQ - 0.5 V ~ 2.3 V V 1

Voltage on any pin relative to Vss VIN, VOUT - 0.5 V ~ 2.3 V V 1

Storage Temperature TSTG -50 ~ +100 oC1

Storage Humidity (without condensation) HSTG 5 to 95 %1

Parameter Symbol Rating Units Notes

DIMM Operating temperature (ambient) TOPR 0 ~ +55 oC

DIMM Barometric Pressure (operating & storage) PBAR 105 to 69 K Pascal 1

DRAM Component Case Temperature Range TCASE 0 ~+95 oC2

Parameter Symbol Min Max Unit Note

Power Supply Voltage

VDD 1.7 1.9 V

VDDL 1.7 1.9 V

VDDQ 1.7 1.9 V 1

Input Reference Voltage VREF 0.49 x VDDQ 0.51 x VDDQ V2

EEPROM Supply Voltage VDDSPD 1.7 3.6 V

Termination Voltage VTT VREF-0.04 VREF+0.04 V 3

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

INPUT DC LOGIC LEVEL

INPUT AC LOGIC LEVEL

AC INPUT TEST CONDITIONS

Notes:

1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device

under test.

2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges

and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.

3. AC timings are referenced with input waveforms switching from VIL (ac) to VIH (ac) on the positive transitions

and VIH (ac) to VIL (ac) on the negative transitions.

Parameter Symbol Min Max Unit Notes

Input High Voltage VIH(DC) VREF + 0.125 VDDQ + 0.3 V

Input Low Voltage VIL(DC) -0.30 VREF - 0.125 V

Parameter Symbol DDR2 400/533 DDR2 667/800 Unit Notes

Min Max Min Max

AC Input logic High VIH(AC) VREF + 0.250 - VREF + 0.200 - V

AC Input logic Low VIL(AC) -V

REF - 0.250 - VREF - 0.200 V

Symbol Condition Value Units Notes

VREF Input reference voltage 0.5 * V DDQ V1

VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1

SLEW Input signal minimum slew rate 1.0 V/ns 2, 3

VDDQ

VIH(ac) min

VIH(dc) min

VREF

VIL(dc) max

VIL(ac) max

VSS

SWING(MAX)

delta TRdelta TF

VREF

VIL

(ac)

max

delta TF

Falling Slew = Rising Slew =

VIH

(ac)

min

- V

REF

delta TR

< Figure: AC Input Test Signal Waveform>

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

Differential Input AC logic Level

1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,

LDQS, UDQS and UDQS.

2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as

CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, L DQS or UDQS) level. The mini-

mum value is equal to VIH(DC) - VIL(DC).

Notes:

1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal

(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).

The minimum value is equal to V IH(AC) - VIL(AC).

2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to

track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross.

DIFFERENTIAL AC OUTPUT PARAMETERS

Note:

1. The typical v a lue of V OX(AC) is expected to be about 0.5 * VDDQ of the transmitting devi ce and VOX(AC) is expected to

track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross.

Symbol Parameter Min. Max. Units Note

VID (ac) ac differential input voltage 0.5 VDDQ + 0.6 V 1

VIX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2

Symbol Parameter Min. Max. Units Note

VOX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1

VDDQ

Crossing point

VSSQ

VTR

VCP

VID VIX or VOX

< Differential signal levels >

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

OUTPUT BUFFER LEVELS

OUTPUT AC TEST CONDITIONS

Notes:

1. The VDDQ of the device under test is referenced.

OUTPUT DC CURRENT DRIVE

Notes:

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and

VDDQ - 280 mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device

drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an

SSTL_18 receiver.

The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define

a convenient driver current for measurement.

Symbol Parameter SSTL_18 Units Notes

VOTR Output Timing Measurement Reference Level 0.5 * VDDQ V1

Symbol Parameter SSTl_18 Units Notes

IOH(dc) Output Minimum Source DC Current - 13.4 mA 1, 3, 4

IOL(dc) Output Minimum Sink DC Current 13.4 mA 2, 3, 4

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz)

512MB: HYMP564P72CP8L

1GB: HYMP512P72CP4L

Note:

1. Pins not under test are tied to GND.

2. These value are guaranteed by design and tested on a sample basis only.

Pin Symbol Min Max Unit

CK0, CK0 CCK 7 11 pF

CKE, ODT CI1 8 12 pF

CS CI2 8 12 pF

Address, RAS, CAS, WE CI3 8 12 pF

DQ, DM, DQS, DQS CIO 6 9 pF

Pin Symbol Min Max Unit

CK0, CK0 CCK 7 11 pF

CKE, ODT CI1 8 12 pF

CS CI2 10 15 pF

Address, RAS, CAS, WE CI3 8 12 pF

DQ, DM, DQS, DQS CIO 6 9 pF

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

IDD SPECIFICATIONS (TCASE: 0 to 95oC)

512MB, 64M x 72 VLP Registered DIMM: HYMP564P72CP8L

1GB, 128M x 72 VLP Registered DIMM: HYMP512P72CP4L

Notes:

1. IDD6 current values are guaranteed up to Tcase of 85oC max.

Symbol C4 (533@CL4) Y5 (667@CL5) Unit Notes

IDD0 1370 1460 mA

IDD1 1460 1460 mA

IDD2P 522 522 mA

IDD2Q 920 1010 mA

IDD2N 1010 1010 mA

IDD3P-F 920 920 mA

IDD3P-S 558 558 mA

IDD3N 1100 1100 mA

IDD4W 1820 2000 mA

IDD4R 1640 1910 mA

IDD5 2000 2090 mA 1

IDD6 522 522 mA

IDD7 2540 2630 mA

Symbol C4 (533@CL4) Y5 (667@CL5) Unit Notes

IDD0 2090 2270 mA

IDD1 2270 2270 mA

IDD2P 794 794 mA

IDD2Q 1190 1370 mA

IDD2N 1370 1370 mA

IDD3P-F 1190 1190 mA

IDD3P-S 866 866 mA

IDD3N 1550 1550 mA

IDD4W 2810 3170 mA

IDD4R 2450 2810 mA

IDD5 3150 3330 mA 1

IDD6 594 594 mA

IDD7 4430 4610 mA

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

IDD Measurement Conditions

Notes:

1. IDD specifications are tested after the device is properly initialized

2. Input slew rate is specified by AC Parametric Test Condition

3. IDD parameters are specified with ODT disabled.

4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS , LDQS, UDQS, and UDQS. IDD values must be met with

all combinations of EMRS bits 10 and 11.

5. Definiti ons for IDD

LOW is defined as Vin ≤ VILAC (max)

HIGH is defined as V in ≥ VIHAC (min)

STABLE is defined as inputs stable at a HIGH or LOW level

FLOATING is defined as inputs at VREF = VDDQ/2

SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and

control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)

for DQ signals not including masks or strobes.

Symbol Conditions Units

IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin

(IDD);CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs

are SWITCHING mA

IDD1 Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK =

tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin (IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH between valid

commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA

IDD2P Precharge power-down current; All banks idl e; tCK = tCK(IDD); CKE is LOW; Other control and address bus

inputs are STABLE; Data bus inpu ts are FLOATING mA

IDD2Q Precharge quiet standby current; All bank s idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and

address bus inputs are STABLE; Data bus inputs are FLOATING mA

IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and

address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA

IDD3P Active power-down current; All bank s open; tCK = tCK(IDD); CKE is LOW;

Other control and address bus inputs are STABLE; Data bus inputs are FLOAT-

ING

Fast PDN Exit MRS(12) = 0 mA

Slow PDN Exit MRS(12) = 1 mA

IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP =tRP(IDD); CKE is

HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus

inputs are SWITCHING mA

IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK

= tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;

Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA

IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),

AL = 0; tCK = tCK(IDD), tRAS = tRA Smax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid com-

mands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA

IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is

HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are

SWITCHING mA

IDD6 Self refresh current; CK and CK at 0V; CKE ≤ 0.2 V; Other contr ol and addr ess b us inp uts are FL OATING; Data

bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85℃ max. mA

IDD7

Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),

AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1* tCK(IDD); CKE is

HIGH, CS is HIGH between v alid commands; Addr ess b us inputs are STABLE during DESELECTs; Data pattern is

same as IDD4R; - Refer to the following page for detailed timing conditions

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

Electrical Characteristics & AC Timings

Sp eed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

AC Timing Parameters by Speed Grade

Speed DDR2-667 DDR2-533 Unit

Bin (CL-tRCD-tRP) 5-5-5 4-4-4

Parameter min min

CAS Latency 54

tRCD 15 15 ns

tRP 15 15 ns

tRAS 45 45 ns

tRC 60 60 ns

Parameter Symbol DDR2-667 DDR2-533 Unit Note

Min Max Min Max

Data-Out edge to Clock edge Skew tAC -450 +450 -500 500 ps

DQS-Out edge to Clock edge Skew tDQSCK -400 +400 -500 450 ns

Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK

Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK

Clock Half Period tHP min

(tCL,tCH) -min

(tCL, tCH) -ns

System Clock Cycle Time tCK 3000 8000 3750 8000 ps

DQ and DM input setup time(diffe rential strobe) tDS 100 -100-ps 1

DQ and DM input hold time(differential strobe) tDH 175 -225-ps 1

DQ and DM input setup time(single ended strobe) tDS1 - --25-ps 1

DQ and DM input hold time(single ended strob e) tDH1 - --25-ps 1

Control & Address input Pulse Width for each input tIPW 0.6 -0.6 - tCK

DQ and DM input pulse width for each input tDIPW 0.35 -0.35 - tCK

Data-out high-impedance window from CK, /CK tHZ -tAC max

-tAC max

DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max ps

DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps

DQS-DQ skew for DQS and associated DQ

signals tDQSQ - 240 - 300 ps

DQ hold skew factor tQHS -340- 400 ps

DQ/DQS output hold time from DQS tQH tHP - tQHS -tHP - tQHS -ps

First DQS latchi ng transitio n

to associated clock edge tDQSS -0.25 + 0.25 -0.25 + 0.25 tCK

DQS input high pulse width tDQSH 0.35 -0.35 -tCK

DQS input low pulse width tDQSL 0.35 -0.35 -tCK

DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK

DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK

Mode register set command cycle time tMRD 2 - 2 - tCK

Write postamble tWPST 0.4 0.6 0.4 0.6 tCK

Write preamble tWPRE 0.35 -0.35 -tCK

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

- continued -

Note:

1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS12[4, 8]21BFP).

2. 0°C ≤ TCASE ≤ 85°C

3. 85°C ＜ TCASE ≤ 95°C

Parameter Symbol DDR2-667 DDR2-533 Unit Note

Min Max Min Max

Address and control input setup time tIS 200 - 250 -ps

Address and control input hold time tIH 275 - 375 -ps

Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK

Read postamble tRPST 0.4 0.6 0.4 0.6 tCK

Auto-Refresh to Active/Auto-Refresh

command period tRFC 105 -105 -ns

Row Active to Row Active Delay for 1KB page size tRRD 7.5 -7.5 - ns

Four Activate Window for 1KB page size tFAW 37.5 -37.5 - ns

CAS to CAS command delay tCCD 22tCK

Write recovery time tWR 15 -15-ns

Auto Precharge Write Recovery + Precharge Time tDAL WR+tRP -tWR + tRP - tCK

Write to Read Command Delay tWTR 7.5 -7.5-ns

Internal read to precharge command delay tRTP 7.5 7.5 ns

Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns

Exit self refresh to a read command tXSRD 200 -200 -tCK

Exit precharge power down

to any non-read command tXP 2 - 2 - tCK

Exit active power down to read command tXARD 2 2 tCK

Exit active power down to read command

(Slow exit, Lower power) tXARDS 7 - AL 6 - AL tCK

CKE minimum pulse width

(high and low pulse width) tCKE 33tCK

ODT turn-on delay tAOND 2222tCK

ODT turn-on tAON tAC (min) tAC (max)

+1 tAC (min) tAC (max)

+1 ns

ODT turn-on (Power-Down mode) tAONPD tAC(min)+2 2tCK+

tAC (max)

+1 tAC(min)+2 2tCK+

tAC (max)

+1 ns

ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 tCK

ODT turn-off tAOF tAC (min) tAC (max)

+0.6 tAC (min) tAC (max)

+ 0.6 ns

ODT turn-off (Power-Down mode) tAOFPD tAC(min)+2 2.5tCK

+tAC(max)

+1 tAC(min)+2 2.5tCK

+tAC(max)

+1 ns

ODT to power down entry latency tANPD 33tCK

ODT power down exit latency tAXPD 88tCK

OCD drive mode output delay tOIT 012012ns

Minimum time clocks remains ON after CKE

asynchronously drops LOW tDelay tIS + tCK +

tIH tIS + tCK +

tIH ns

Average periodic Refresh Interval tREFI - 7.8 - 7.8 us 2

tREFI -3.9 -3.9 us 3

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

PACKAGE OUTLINE

64Mx72 (1 rank) - HYMP564P72CP8L

N o te ) A ll dim e n sio n s a re in millimete rs u nle ss o th erwise s tate d.

Front

0.8 ± 0.05

1.0

0.20

D e ta il o f Co n ta c ts A

2.50 ± 0.20

D e tail o f C on ta cts B

2.50

1.50± 0.10

3.80

5.00

Side

4.0 ma x

1.27 ± 0.10

10.0

Back

18.29

4.0±0.1

133.35

63.0

5.175 5.175

55.0

5.0

Detail-A Detail-B

PLL

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

PACKAGE OUTLINE

128Mx72 (1 rank) - HYMP512P72CP4L

N o te ) A ll d im e n sio n s a re in millimete rs u nle ss oth erwise s tate d.

Front

0.8 ± 0.05

1.0

0.20

D e ta il o f Co n ta c ts A

2.50 ± 0.20

D e tail o f C on ta cts B

2.50

1.50± 0.10

3.80

5.00

Side

4.0 ma x

1.27 ± 0.10

10.0

Back

18.29

4.0±0.1

133.35

63.0

5.175 5.175

55.0

5.0

Detail-A Detail-B

PLL

Rev. 0.2 /Sep. 2008

240pin DDR2 VLP Registered DIMMs

REVISION HISTORY

Revision History Date Remark

0.1 Initial Release Jul. 2007

0.2 Editorial Correction Sep. 2008