KST-D003-000 1
STD882D
NPN Silicon Transistor
2
Description
• Suitable for low voltage large current driv ers
• Excellent hFE Linearity
• Complementary pair with STB772D
• Switching Application
Features
• Low collector saturation voltage VCE(sat)=0.4V(Max.)
Ordering Information
Type NO. Marking Package Code
STD882D STD882 D-PAK
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Connectio ns
1. Base
2. Collector
3. Emi t ter
KST-D003-000 2
STD882D
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 40 V
Collector-Emitter voltage VCEO 15 V
Emitter-Base voltage VEBO 7 V
Collector current(DC) IC(DC) 5 A
Collector current(Pulse) * IC(Pulse) * 8 A
Collector dissipation PC 15 W
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
* Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 40 - - V
Collector-Emitter breakdown voltage BVCEO I
C=1mA, IB=0 15 - - V
Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 7 - - V
Collector cut-off current ICBO V
CB=30V, IE=0 - - 0.1
µA
Emitter cut-off current IEBO V
EB=5V, IC=0 - - 0.1
µA
hFE1 VCE=2V, IC=0.5A 160 - 320 -
DC current gain hFE2 VCE=2V, IC=2A 100 - - -
Collector-Emitter saturation voltage VCE(sat) I
C=3A, IB=100mA - - 0.4 V
Transition frequency fT V
CE=6V, IE=-50mA - 150 - MHz
Collector output capacitance Cob V
CB=20V, IE=0, f=1MHz - - 50 pF
KST-D003-000 3
STD882D
Electrical Characteristic Curves
*
Fig. 4 fT - IC
Fig. 3 VCE
(
sat
)
- IC
Fig. 2 hFE - IC
Fig. 6 Safe operating Area
Fig. 1 Pc - Ta
Fig. 5 Cob - VCB
