BFX34 NPN SILICON SWITCHING TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39 The ASI BFX34 is Designed for General Purpose Medium Power Switching and Amplifier applications. MAXIMUM RATINGS IC 5.0 A VCBO 120 V VCEO 60 V PDISS 5.0 W @ TA = 25 C TJ -65 to +200 C TSTG -65 to +200 C JC 35 C/W 1 = Emitter 2 = Base 3 = Collector ELECTRICAL CHARACTERISTICS SYMBOL NONE TA = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 60 V BVCBO IC = 5.0 mA 120 V BVEBO IE = 1.0 mA 6.0 V ICES VCE = 60 V 0.02 A IEBO VEB = 4.0 V 10 A hFE VCE = 2.0 V VCE = 0.6 V VCE = 2.0 V IC = 1.0 A IC = 2.0 A IC = 2.0 A IC = 5.0 A IB = 500 mA 1.0 V IC = 5.0 A IB = 500 mA 1.6 V VCE(SAT) VBE(SAT) 40 100 75 80 --150 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 1/2 Specifications are subject to change without notice. 2N5109 BFX34 NONE DYNAMIC ELECTRICAL CHARACTERISTICS SYMBOL O TA = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS MHz ft VCE = 5.0 V CEBO VEB = 0.5 V f =1.0 MHz 500 pF CCBO VCB = 10 V f =1.0 MHz 100 pF ton toff VCC = 20 V 0.25 1.2 S IC = 500 mA IC= 0.5 A f = 20 MHz 70 IB1 = -IB2 = 500 mA A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 2/2 Specifications are subject to change without notice.