CREAT BY ART
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Typical IR less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UNIT
P
PK
Watts
P
D
Watts
T
JO
C
T
STG O
C
Note 2: V
F
=3.5V on SMCJ5.0 thru SMCJ90 Devices and V
F
=5.0V on SMCJ100 thru SMCJ170 Devices
1. For Bidrectional Use C or CA Suffix for Types SMCJ5.0 through Types SMCJ170
2. Electrical Characterstics Apply in Both Directions
PART NO.
Note 1: "xxxx" defines voltage from 5.0V (SMCJ5.0) to 170V (SMCJ170A)
PART NO.
SMCJ170A
SMCJ170A
SMCJ170A
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
Suface Mount Transient Voltage Suppressor
FEATURES
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
DO-214AB (SMC)
MECHANICAL DATA
Case: DO-214AB (SMC)
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1) 1500
Steady state power dissipation 5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
200 A
Maximum instantaneous forward voltage at 100 A for
Unidirectional only (Note 2) V
F
3.5 / 5.0 Volts
GREEN COMPOUND
CODE
PACKAGE PACKING
Typical thermal resistance R
θJC
R
θJA
10
55 ℃/W
Operating junction temperature range - 55 to +150
SMC 3,000 / 13" Paper reel
M6
Storage temperature range - 55 to +150
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING CODE
PACKING CODE GREEN
COMPOUND DESCRIPTION
SMCJxxxx
(Note 1) Prefix "H"
R7
Suffix "G"
SMC 850 / 7" Plastic reel
R6
SMCJ170A R7G R7 G Green compound
SMC 3,000 / 13" Plastic reel
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED
SMCJ170AHR7 H R7 AEC-Q101 qualified
SMCJ170A R7 R7
CREAT BY ART
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted)
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER (PPPM) OR CURRENT(IPP)
DERATING IN PERCENTAGE, %
TA, AMBIENT TEMPERATURE (oC)
FIG.2 PULSE DERATING CURVE
10
100
1000
1 10 100
IFSM, PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak Value
IPPM
tr=10μs
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
10
100
1000
10000
100000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
TA=25℃
f=1.0MHz
Vsig=50mVp-p
VR
=
0
VR-RATED
STAND-OFF
VOLTAGE
UNIDIRECTIONAL
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (uS)
FIG. 1 PEAK PULSE POWER RATING CURVE
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
CREAT BY ART
Test Stand-Off Maximum
Current Voltage Reverse Leakage
I
T
V
WM
@ V
WM
Min Max (mA) (V) I
D
(uA) (Note3)
SMCJ5.0 GDD 6.4 7.3 10 5 1000 164 9.6
SMCJ5.0A GDE 6.4 7 10 5 1000 171 9.2
SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4
SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3
SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3
SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2
SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3
SMCJ7.0A GDM 7.78 8.6 10 7 200 131 12.0
SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3
SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9
SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0
SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6
SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9
SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4
SMCJ9.0 GDU 10 12.2 1 9 10 93 16.9
SMCJ9.0A GDV 10 11.1 1 9 10 102 15.4
SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8
SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0
SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1
SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2
SMCJ12 GED 13.3 16.3 1 12 1 71 22.0
SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9
SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8
SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5
SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8
SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2
SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9
SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4
SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8
SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0
SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5
SMCJ17A GER 18.9 20.9 1 17 1 57 27.6
SMCJ18 GES 20 24.4 1 18 1 48 32.2
SMCJ18A GET 20 22.1 1 18 1 53 29.2
SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8
SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4
SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4
SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5
SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0
SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9
SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6
SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1
SMCJ28 GFF 31.1 38 1 28 1 31 50.0
SMCJ28A GFG 31.1 34.4 1 28 1 34 45.4
SMCJ30 GFH 33.3 40.7 1 30 1 29 53.5
SMCJ30A GFK 33.3 36.8 1 30 1 32 48.4
SMCJ33 GFL 36.7 44.9 1 33 1 26 59.0
SMCJ33A GFM 36.7 40.6 1 33 1 29 53.3
SMCJ36 GFN 40 48.9 1 36 1 24 64.3
SMCJ36A GFP 40 44.2 1 36 1 27 58.1
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
Breakdown Voltage Maximum
Peak Surge
Current
I
PPM
(A) (Note2)
Maximum
Clamping
Voltage at IPPM
Vc (V)
(Note5)
VBR (V)
at I
T
CREAT BY ART
Test Stand-Off Maximum
Current Voltage Reverse Leakage
I
T
V
WM
@ V
WM
Min Max (mA) (V) I
D
(uA) (Note3)
SMCJ40 GFQ 44.4 54.3 1 40 1 22 71.4
SMCJ40A GFR 44.4 49.1 1 40 1 24 64.5
SMCJ43 GFS 47.8 58.4 1 43 1 20 76.7
SMCJ43A GFT 47.8 52.8 1 43 1 22 69.4
SMCJ45 GFU 50 61.1 1 45 1 19 80.3
SMCJ45A GFV 50 55.3 1 45 1 21 72.7
SMCJ48 GFW 53.3 65.1 1 48 1 18 85.5
SMCJ48A GFX 53.3 58.9 1 48 1 20 77.4
SMCJ51 GFY 56.7 69.3 1 51 1 17 91.1
SMCJ51A GFZ 56.7 62.7 1 51 1 19 82.4
SMCJ54 GGD 60 73.3 1 54 1 16 96.3
SMCJ54A GGE 60 66.3 1 54 1 18 87.1
SMCJ58 GGF 64.4 78.7 1 58 1 15 103
SMCJ58A GGG 64.4 71.2 1 58 1 16 93.6
SMCJ60 GGH 66.7 81.5 1 60 1 14 107
SMCJ60A GGK 66.7 73.7 1 60 1 16 96.8
SMCJ64 GGL 71.1 86.9 1 64 1 13.8 114
SMCJ64A GGM 71.1 78.6 1 64 1 15 103
SMCJ70 GGN 77.8 95.1 1 70 1 12.6 125
SMCJ70A GGP 77.8 86 1 70 1 13.9 113
SMCJ75 GGQ 83.3 102 1 75 1 11.7 134
SMCJ75A GGR 83.3 92.1 1 75 1 13 121
SMCJ78 GGS 86.7 106 1 78 1 11.3 139
SMCJ78A GGT 86.7 95.8 1 78 1 12.5 126
SMCJ85 GGU 94.4 115 1 85 1 10.4 151
SMCJ85A GGV 94.4 104 1 85 1 11.5 137
SMCJ90 GGW 100 122 1 90 1 9.8 160
SMCJ90A GGX 100 111 1 90 1 10.7 146
SMCJ100 GGY 111 136 1 100 1 8.8 179
SMCJ100A GGZ 111 123 1 100 1 9.7 162
SMCJ110 GHD 122 149 1 110 1 8 196
SMCJ110A GHE 122 135 1 110 1 8.9 177
SMCJ120 GHF 133 163 1 120 1 7.3 214
SMCJ120A GHG 133 147 1 120 1 8.1 193
SMCJ130 GHH 144 176 1 130 1 6.8 231
SMCJ130A GHK 144 159 1 130 1 7.5 209
SMCJ150 GHL 167 204 1 150 1 5.8 266
SMCJ150A GHM 167 185 1 150 1 6.4 243
SMCJ160 GHN 178 218 1 160 1 5.4 287
SMCJ160A GHP 178 197 1 160 1 6 259
SMCJ170 GHQ 189 231 1 170 1 5.1 304
SMCJ170A GHR 189 209 1 170 1 5.7 275
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and less, the I
D
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
Maximum
Clamping
Voltage at IPPM
Vc (V)
(Note5)
Maximum
Peak Surge
Current
I
PPM
(A) (Note2)
Device
Device
Marking
Code
Breakdown Voltage
VBR (V)
at I
T
Min Max Min Max
A 2.90 3.20 0.114 0.126
B 6.60 7.11 0.260 0.280
C 5.59 6.22 0.220 0.245
D 2.00 2.62 0.079 0.103
E 1.00 1.60 0.039 0.063
F 7.75 8.13 0.305 0.320
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYOU T
Symbol Unit (mm) Unit (inch)
A 3.3 0.130
B 2.5 0.098
C 6.8 0.268
MARKING DIAGRAM
D 4.4 0.173
E 9.4 0.370
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405073 Version: L14
SMCJ SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
