M@ 4estikR OUTLINE DIMENSIONS STVBL1 : 15,6403 600V 1A 1S Mit Cd at Bio 752M) one Class an %, Gy bac (Bl) Type No. \ ) Date code DODOE@ Unit - mm Mee RATINGS AEXTRAIER Absolute Maximum Ratings m 8 225 | sive veeo | ti item Symbol Conditions : Sivezo . IVER Unit (RARUEIE ance , Storage Temperature Tstg | 40 ; 150 : Cc Hai TG Ao < Operating Junction Temperature } oe ao tt A SEG BE ona ie Maximum Reverse Voltage VRM : 200 600 Vv Hh ite Jo | BOHz IESKIB:, HELA, 7) vb AEB, Ta=25C | 1 A Average Rectified Forward Current 50Hz sine wave, R-load, On glass-epoxi substrate, Ta=25C L tt ATA 3 IRB iE Irs | DOHZIESKIR, JRO L 14 7 +t ASAI, T]=25C 30 A Peak Surge Forward Current s 50Hz sine wave, Non-repetitive | cycle peak value, Tj=25C _ Faint 2 FNS ore Current Squared Time It | lmsSt<10ms Tco=25C 4.5 Aes Bah) - HAE Electrical Characteristics (T/=25C) IE AS TE _ AWARE, 1 BF OBS MAX Forward Voltage Ve | Ip=0.5A, Pulse measurement, Rating of per diode 1.05 Vv TS tt = 28 AMIE, 1 KF YY OBS MAX 48 Reverse Current IR VR=VrM, Pulse measurement, Rating of per diode : Ax 10 BA Bil 2A ab -Y FRI MAX 16. SEH J Between junction and lead . Pelee C/W Thermal Resistance Bia #43) - BE MAX 62, | Between junction and ambientBH CHARACTERISTIC DIAGRAMS WA ray tet: Forward Voltage 1A Bw Ir (A) pulse test per one diode WR EO Vr (V) BARE Power Dissipation @Hwe P CW) HAH To (A) | sine wave] Tj=150C CARD 7 Rin Surge Forward Current Capability sine wave '10ms'10ms, non-repetitive Tj=25C AT PETE Irs (A) jHRIAB (cycle) F4b-F4VGINT Talo Derating Curve Ta~-lo on glass-epoxi substrate y Py a land dmms fe wave R-load in air Hi Mie Jo CA) ABNER Ta CC)