ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip Ideal for automated placement Super fast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter PARAMETER VALUE UNIT IF(AV) 1 A VRRM 200 - 600 V IFSM 30 A TJ MAX 150 C Package DO-214AC (SMA) Configuration Single Die MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 0.06 g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL ES1D-T ES1G-T ES1J-T ES1D ES1G ES1J UNIT Marking code on the device Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V VDC IF(AV) 200 400 600 1 V A IFSM 30 A TJ TSTG - 55 to +150 C - 55 to +150 C Maximum DC blocking voltage Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode) Junction temperature Storage temperature 1 Version:D1910 ES1D-T - ES1J-T Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP Junction-to-ambient thermal resistance RJA 85 UNIT C/W Junction-to-lead thermal resistance RJL 35 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 A - 100 A 16 - pF 18 - pF - 35 ns ES1D-T Forward voltage per diode (1) ES1G-T IF =1A, TJ=25C VF ES1J-T Reverse current @ rated VR per diode TJ = 25C (2) TJ =125C IR ES1D-T Junction capacitance ES1G-T 1 MHz, VR=4.0V CJ ES1J-T IF=0.5A , IR=1.0A Reverse recovery time IRR=0.25A trr Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING CODE ES1x-T (Note 1, 2) R3 R2 M2 PACKING CODE SUFFIX G PACKAGE PACKING SMA SMA SMA 1,800 / 7" Plastic reel 7,500 / 13" Paper reel 7,500 / 13" Plastic reel Notes: 1. "x" defines voltage from 200V (ES1D-T) to 600V (ES1J-T) 2. Whole series with green compound (halogen-free) EXAMPLE P/N EXAMPLE P/N PART NO. PACKING CODE ES1J-T R3G ES1J-T R3 2 PACKING CODE SUFFIX G DESCRIPTION Green compound Version:D1910 ES1D-T - ES1J-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig1. Forward Current Derating Curve Fig2. Typical Junction Capacitance 100 1 0.8 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 1.2 0.6 0.4 0.2 ES1G-T - ES1J-T ES1D-T 10 f=1.0MHz Vsig=50mVp-p Resister or inductive load 1 0 80 90 100 110 120 130 LEAD TEMPERATURE 140 0.1 150 1 100 TJ=125C 1 TJ=25C 0.01 0 20 40 60 80 100 10010 Pulse width=300s 1% duty cycle UF1DLW 1 10 TES1D-T J=125C TJ=25C 0.1 0.01 1 Pulse width 0.001 0.1 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) ES1G-T (A) 1000 0.1 100 Fig4. Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) Fig3. Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) (C) 0.4 0.6 0.5 0.8 0.6 1 0.7 0.8 1.2 0.9 1.4 ES1J-T 1 1.1 1.6 1.8 FORWARD VOLTAGE (V) 3 Version:D1910 1.2 ES1D-T - ES1J-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) Fig5. Maximum Non-repetitive Forward Surge Current 30 8.3ms single half sine wave 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version:D1910 ES1D-T - ES1J-T Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) DIM Unit (mm) Unit (inch) Min Max Min Max A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.93 0.155 D 2.41 0.095 E 5.45 0.215 MARKING DIAGRAM P/N G YW F 5 = Marking Code = Green Compound = Date Code = Factory Code Version:D1910 ES1D-T - ES1J-T Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:D1910