PD- 90372B IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET (R)TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS RDS(on) ID IRF440 500V 0.85 8.0A TO-3 (TO-204AA) Features Description HEXFET(R) MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter Symbol ID1 @ VGS = 10V, TC = 25C Value Continuous Drain Current 8.0 ID2 @ VGS = 10V, TC = 100C Continuous Drain Current 5.0 Units A IDM @TC = 25C Pulsed Drain Current 32 PD @TC = 25C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 700 mJ IAR Avalanche Current 8.0 A EAR Repetitive Avalanche Energy 12.5 mJ dv/dt Peak Diode Recovery 3.5 V/ns TJ Operating Junction and TSTG -55 to + 150 Storage Temperature Range Lead Temperature C 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (Typical) g For footnotes refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ RDS(on) Min. Typ. Max. Units Drain-to-Source Breakdown Voltage 500 --- --- V Breakdown Voltage Temp. Coefficient --- 0.78 --- V/C --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.85 0.98 4.0 --- 25 250 100 -100 68.5 12.5 42 21 73 72 51 VGS(th) Gfs IDSS Gate Threshold Voltage Forward Transconductance IGSS QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- 2.0 4.7 --- --- --- --- 27.3 2.0 11 --- --- --- --- Ls +LD Total Inductance --- 6.1 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1300 310 120 --- --- --- Static Drain-to-Source On-Resistance Zero Gate Voltage Drain Current Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID2 = 5.0A VGS = 10V, ID1 = 8.0A V VDS = VGS, ID = 250A S VDS = 15V, ID2 = 5.0A VDS = 400V, VGS = 0V A VDS = 400V,VGS = 0V,TJ =125C VGS = 20V nA VGS = -20V ID1 = 8.0A nC VDS = 250V VGS = 10V VDD = 250V ID1 = 8.0A ns RG = 9.1 VGS = 10V Measured from Drain lead (6mm / 0.25 in from package) to Source nH lead (6mm/ 0.25 in from package) VGS = 0V pF VDS = 25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units --- --- --- --- --- 8.0 32 1.5 700 8.9 Test Conditions IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A V ns C TJ = 25C,IS = 8.0A, VGS = 0V TJ = 25C ,IF = 8.0A,VDD 50V di/dt = 100A/s Thermal Resistance Min. Typ. Max. RJC Symbol Junction-to-Case Parameter --- --- 1.0 RJA Junction-to-Ambient (Typical socket mount) --- --- 30 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, L = 21.88mH, Peak IL = 8.0A. ISD 8.0A, di/dt 100A/s, VDD = 500V, TJ 150C.Suggested RG = 9.1 Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 V(BR)DSS tp I AS Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 Case Outline and Dimensions - TO-204AA (Modified TO-3) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2019-07-08 IRF440 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 International Rectifier HiRel Products, Inc. 2019-07-08