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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SDA-3000
GaAs DISTRIBUTED AMPLIFIER
RFMD’s SDA-3000 is a directly coupled (DC) GaAs microwave monolithic
integrated circuit (MMIC) driver amplifier die designed for use as a Mach
Zehnder Modulated (MZM) laser driver employing single-ended (SE) archi-
tectures with V
(V-pi) ranging from 4V to 7V, clock driver for return-to-zero
(RZ) and carrier select (CS) Carver Modulators, broadband automated test
equipment (ATE), instrumentation, military, and aerospace applications.
3
2
1
7 6
4
5
VG2
IN
VTI
OUTVTO
VCAS
NC
DC to 24GHz Operation
+25dBm P
3dB
Gain=16dB Typical
Noise Figure=2.1dB at 10GHz
Output Voltage to 7V
PP
Single Supply Voltage
160 mA Total Current
Applications
Driver for Single-ended (SE)
MZM, NRZ, DPSK, ODB, RZ
Clock Driver for RZ and CS Pulse
Carver
Broadband ATE
Instrumentation
Military
Aerospace
DS091020
Die: 3.10mmx1.45mmx0.102mm
SDA-3000
GaAs Distrib-
uted Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Electrical Specifications
TA=+25°C, V
DD
=+8V
DC
, VG2@=+3.5V
DC
,
I
DD
=160mA*
Operating Frequency 0 24 GHz 3dB BW
Gain 15.8 16.8 dB 10GHz
Output Voltage 8 V
P-P
IP3 at 10GHz 32 dBm P
OUT
+10dBm
P1dB 23 dBm 10GHz
P
3dB
25 dBm 10GHz
Noise Figure at Mid-Band 2.1 dB 10GHz
Input Return Loss 12 dB
Output Return Loss 15
Supply Current 160 mA
Supply Voltage 8 V
DC
*Adjust VTI between -1.5V
DC
to +0.2V
DC
to achieve I
DD
=160mA typical., V
G2
=3.5V
DC
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SDA-3000
Typical Electrical Performance
Absolute Maximum Ratings
Parameter Rating Unit
Drain Bias Voltage (V
DD
) +9.0 V
DC
Gate Bias Voltage (VTI) -2 to +0 V
DC
Gate Bias Voltage (V
G2
)(V
DD
-8.0) V
DC
to V
DD
V
RF Input Power (V
DD
=+8.0V
DC
)15dBm
Operating Channel Temperature (T
J
)+175 °C
Continuous Power Dissipation
(T=+85°C) 1.7 W
Thermal Resistance (Pad to Die Bot-
tom) 50 °C/W
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
ESD JESD22-A114 Human Body
Model (HBM) Class 0 (All Pads)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
S11
(dB)
Fre quency (GHz)
S11 versus Frequency
-40C
25C
85C
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30 35 40
S21
(dB)
Frequency (GHz)
S21 versus Frequency
-40C
25C
85C
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20 25 30 35 40
S12
(dB)
Frequency (GHz)
S12 versus Frequency
-40C
25C
85C
-40
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
S22
dB
Frequency (GHz)
S22 versus Frequency
-40C
25C
85C
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SDA-3000
Typical Electrical Performance
0
5
10
15
20
25
0 5 10 15 20 25 30 35
P1dB
(dBm)
Fre quency (GHz)
P1dB versus Frequency
25C
-40C
85C
0
5
10
15
20
25
30
35
40
0 2 4 6 8 101214161820
OIP3
(dB)
Frequency (GHz)
OIP3 versus Frequency
at Po=0 dBm/tone (1MHz tone spacing)
25C
-40C
85C
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35
P1dB
(dBm)
Frequency (GHz)
P3dB versus Frequency
25C
-40C
85C
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35
NF
(dB)
Frequency (GHz)
NF versus Frequency
25C
-40C
85C
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SDA-3000
Package Drawing
Refer to drawing posted at www.rfmd.com for tolerances.
Notes:
1. All dimensions in millimeters
2. No connection required for unlabeled bond pads
3. Die thickness is 0.102mm (4 MIL)
4. Typical bond pad is 0.100mm square
5. Backside metallization: gold
6. Backside metal is ground
7. Bond pad metallization: gold
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SDA-3000
Pin Function Description Interface Schematic
1RFIN
RF Input. This pad is DC coupled and matched to 50 from DC to 24GHz. 50
microstrip transmission line on 0.127mm (5mil) thick alumina thin film sub-
strate is recommended for RF input and output.
2VG2
VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier.
If this port is used, a 1000pF bypass capacitor with the shortest wirebond length
possible is recommended to prevent low frequency gain ripple.
3VTO
The output drain termination pad. This pad requires a suggested 1000pF bypass
capacitor with the shortest wirebond length to prevent low frequency gain rip-
ple.The value of the external capacitance limits the low frequency response of
the amplifier.
4RFOUT and
VDD
RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina
thin film substrate is recommended for RF input and output. Connect the DC bias
(V
DD
) network to provide drain current (I
DD
).
5VCAS
Provides VG2 gate voltage to the cascode amplifier. The value is ~ (V
CC
/2 - abso-
lute value of VTI).
6VG21
Not connected.
7VTI
Input gate voltage, used to bias the amplifier. The value is between -1.5V
DC
(device is pinched OFF) to +0.2V
DC
(fully ON). This pad requires a bypass capaci-
tor to ground with the shortest possible wirebond length to prevent low frequency
gain ripple. The value of the external capacitance limits the low frequency
response of the amplifier.
Die GND Ground connection. Connect die bottom directly to ground plane for best perfor-
mance. NOTE: The die should be connected directly to the ground plane with con-
ductive epoxy.
RFIN
1000 pF
Term
Resistor
10 pF
1000 pF
RFOUT
1000 pF
1000 pF
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SDA-3000
Assembly Diagram
Application Circuit Schematic
50-Ohm
Transmission
Line
1
2
3
1000pF
Capacitor
To GND
1000pF
Capacitor
To GND
3mil
Nominal
Gap
4
5
1000pF
Capacitor
To GND
67
1000pF
Capacitor
To GND
To VTI
Power Supply
To
VG2
Power
Supply
RF & DC Bonds
1mil Gold Wire
1
RFIN
2
VG2
1000pF
3
1000pF
4RFOUT
Vdd
NOTE
NOTE:
Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
5
1000pF
6
7
1000pF
7 of 8DS091020
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SDA-3000
Measurement Technique
All specifications and typical performances reported in this document were measured in the following manner. Data was taken
using a temperature controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and inte-
grated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the
die as shown in the figure below using 1 mil diameter bondwires. The spacing between the test interface and the die was
200μm, and the bond wire loop height was 100 μm. The thickness of the test interface is 125μm (5mil). The calibration of the
test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire
attachment. Therefore, all data represents the integrated circuit and accompanying bond wires.
Ordering Information
Part Number Description Delivery Method Die/GelPak
SDA3000 GaAs Distributed Amplifier, 24GHz,
3.10mmx1.45mm Die GelPak 10 pcs or more
SDA3000SB GaAs Distributed Amplifier, 24GHz,
3.10mmx1.45mm Die GelPak 2 pcs
8 of 8 DS091020
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SDA-3000