S10077 - Hamamatsu Photonics K.K.

CMOS linear image sensor

Digital output, built-in 8/10-bit A/D converter,

single power supply operation

www.hamamatsu.com

S10077

Analytical instruments

Pixel pitch: 14 μm

Pixel height: 50 μmPosition detection

Image reading

1024 pixels

Single power supply operation: 3.3 to 5 V

8-bit/10-bit switchable ADC

Low power consumption

On-chip charge ampliﬁ er with excellent input/output

characteristics

Simultaneous all-pixel integration and variable inte-

gration time function

Built-in timing generator allows operation with only

start and clock pulse inputs.

Video data rate: 1 MHz max.

Spectral response range: 400 to 1000 nm

Digital output

Absolute maximum ratings

Structure

Parameter Symbol Condition Value Unit

Supply voltage Vdd Ta=25 °C -0.3 to +6 V

A/D mode selection voltage Vsel Ta=25 °C -0.3 to +6 V

Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V

Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V

Operating temperature*1Topr -5 to +50 °C

Storage temperature*1Tstg -10 to +60 °C

*1: No condensation

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Parameter Speciﬁ cation Unit

Number of pixels 1024 -

Pixel pitch 14 μm

Pixel height 50 μm

Photosensitive area length 14.336 mm

Package LCP (liquid crystal polymer) -

Window material Tempax -

The S10077 is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge

ampliﬁ er with excellent input/output characteristics. The circuit also includes a 8-bit/10-bit A/D converter.

Features Applications

CMOS linear image sensor S10077

Recommended terminal voltage

Electrical characteristics (Ta=25 °C)

Electrical and optical characteristics (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Supply voltage Vdd 3.3 5 5.25 V

AD mode selection voltage 8-bit Vsel 0 - 0.4 V

10-bit Vdd - 0.25 Vdd Vdd + 0.25 V

Clock pulse voltage High level V(CLK) Vdd - 0.25 Vdd Vdd + 0.25 V

Low level 0 - 0.4 V

Start pulse voltage High level V(ST) Vdd - 0.25 Vdd Vdd + 0.25 V

Low level 0 - 0.4 V

Parameter Symbol Min. Typ. Max. Unit

Clock pulse frequency 8-bit f(CLK) 1 M - 12 M Hz

10-bit 1 M - 6 M

Video data rate VR - f(CLK)/12 - Hz

Digital output rise time (10 to 90%)

CL=10 pF*2

tr --30

CL=30 pF*2--60

Digital output fall time (90 to 10%)

CL=10 pF*2

tf --30

CL=30 pF*2--60

Current

consumoption

Vdd=3.3 V 8-bit*3

-12-

10-bit*4-10-

Vdd=5 V 8-bit*3-16-

10-bit*4-14-

*2: CL=Load capacitance of digital output terminal

*3: f(CLK)=12 MHz

*4: f(CLK)=6 MHz

Parameter Symbol Min. Typ. Max. Unit

Spectral response range λ400 to 1000 nm

Peak sensitivity wavelength λp- 700 - nm

Photosensitivity*5R-30-V/lx · s

Dark output*6

Vdd=3.3 V 8-bit*7

- 0.04 0.6

digit

10-bit*8- 0.16 2.4

Vdd=5 V 8-bit*7- 0.03 0.6

10-bit*8- 0.12 2.4

Saturation output*9

Vdd=3.3 V 8-bit*7

Dsat

255 - -

digit

10-bit*81023 - -

Vdd=5 V 8-bit*7255 - -

10-bit*81023 - -

Readout noise

Vdd=3.3 V 8-bit*7

-0.72

digit

10-bit*8- 2.8 8

Vdd=5 V 8-bit*7-0.72

10-bit*8- 2.8 8

Offset output

Vdd=3.3 V 8-bit*7

11 29 41

digit

10-bit*844 116 164

Vdd=5 V 8-bit*771927

10-bit*828 76 108

Photoresponse nonuniformity*5 *10 PRNU - - ±10 %

*5: Measured with a tungsten lamp of 2856 K

*6: Integration time Ts=10 s

*7: f(CLK)=12 MHz

*8: f(CLK)=6 MHz

*9: Absolute value with respect to 0 digit

*10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly

illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both

ends, and is deﬁ ned as follows:

PRNU= ΔX/X × 100 (%)

X: average output of all pixels, ΔX: difference between X and maximum or minimum output

CMOS linear image sensor S10077

Spectral response (typical example)

Wavelength (nm)

Relative sensitivity (%)

(Ta=25 °C)

400 600 800 1000

100

1200

KMPDB0266EB

Parameter Symbol Speciﬁ cation Unit

Digital output format - Serial output -

Resolution*11 8-bit mode RESO 8bit

10-bit mode 10

Conversion voltage range*12 Vdd=3.3 V -0 to 2.2 V

Vdd=5 V 0 to 3.3

*11: Vsel=0 V (8-bit mode), Vdd (10-bit mode)

*12: Digital output is available from MSB as serial output.

8-bit mode: D7 to D0

10-bit mode: D9 to D0

A/D converter speciﬁ cations (Ta=25 °C)

CMOS linear image sensor S10077

Timing Chart

CLK

tf(CLK) tr(CLK)

tf(ST) tr(ST)

thp(ST)

tlp(ST)

tpi(ST)

KMPDC0224EB

Parameter Symbol Min. Typ. Max. Unit

Start pulse interval tpi(ST) 12339/f(CLK) - 120000/f(CLK) s

Start pulse low period tlp(ST) 45/f(CLK) - - s

Start pulse high period*13 thp(ST) 6000/f(CLK) - - s

Start pulse rise and fall times tr(ST), tf(ST) 0 20 30 ns

Clock pulse duty - 40 50 60 %

Clock pulse rise and fall times tr(CLK), tf(CLK) 0 20 30 ns

*13: Signal charge integration time equals the high period of start pulse + 7 CLK cycles.

The shift register operation starts at the fall of CLK pulse immediately after ST pulse sets to low.

Integration time can be changed by changing the high-to-low ratio of ST pulses.

CMOS linear image sensor S10077

KMPDC0225EB

012345 10

15 20 25

34.5

33 45 57

41.5 46.5 53.5

AO1

34 42

D7 D0 46 54

D7 D0

45 5721

AO2

AO3 AO4

30 35 40 45 50 55

CLK

EOS

Trig(A)

Trig(D)

EOC

tlp(ST)

thp(ST)

tpi(ST)

DO1 DO2

12322

12281.5 12286.5 12293.5 12298.5 12305.5 12310.5 12317.5

12285 12297 12309 12320

12286

AO1023

12297

12282

D0 12286

D7 12294

D0 12298

D7 12306

D0 12310

D7 12318

12285

CLK

EOS

Trig(A)

Trig(D)

EOC

thp(ST)

tpi(ST)

12298

AO1024

DO1022 DO1023 DO1024

Note: When using analog output AO, read the AO output at the falling edge of Trig(A).

When using digital output DO, read the DO output at the falling edge of Trig(D).

8-bit mode

In the neighborhood of start pixel

In the neighborhood of last pixel

CMOS linear image sensor S10077

KMPDC0226EB

10-bit mode

012345 10

15 20 25

34.5 43.5 46.5 55.5

33 45 57

AO1

34 44 46 56

D9 D0 D9 D0

45 5721

AO2

AO3 AO4

30 35 40 45 50 55

CLK

EOS

Trig(A)

Trig(D)

EOC

tlp(ST)

thp(ST)

tpi(ST)

DO1 DO2

12322

12283.5 12286.5 12295.5 12298.5 12307.5 12310.5 12319.5

12285 12297 12309 12320

12297

12284

D0 12286

D9 12296

D0 12298

D9 12308

D0 12310

D9 12320

12285

12286 12298

CLK

EOS

Trig(A)

Trig(D)

EOC

thp(ST)

tpi(ST)

AO1023 AO1024

DO1022 DO1023 DO1024

In the neighborhood of start pixel

In the neighborhood of last pixel

CMOS linear image sensor S10077

Dimensional outline (unit: mm)

Photosensitive area

14.336

41.6 ± 0.2

2.54 0.51

27.94

7.168 ± 0.3

9.1 ± 0.1

4.23 ± 0.4

Photosensitive

area 50 µm

Photosensitive

surface

1 ch

a’

6.83 ± 0.2

10.2 ± 0.5

10.02 ± 0.3

3.0

4.0 ± 0.5

1.4 ± 0.2*2

1.35 ± 0.2*1

0.5 ± 0.05*3

0.2

Tolerance unless otherwise noted: ±0.1

*1: Distance from window upper surface

to photosensitive surface

*2: Distance from package bottom

to photosensitive surface

*3: Glass thickness

Direction of scan

a-a’ cross section

Pin no. Symbol I/O Discription Pin no. Symbol I/O Discription

1 NC No connection 13 NC No connection

2 D.Trig O Trigger signal for digital output 14 NC No connection

3 DO O Digital output 15 NC No connection

4 A.Trig O Trigger signal for analog output 16 EOS O End of scan signal

5 AO O Analog output 17 EOC O Digital conversion end signal

6 NC No connection 18 NC No connection

7 NC No connection 19 Vsel I A/D mode selection voltage

8 Vdd I Supply voltage 20 Vss I GND

9 Vss I GND 21 Vdd I Supply voltage

10 NC No connection 22 CLK I Clock signal

11 NC No connection 23 ST I Start signal

12 NC No connection 24 NC No connection

Note: Leave the “NC” terminals open and do not connect them to GND.

When using the analog output terminal, connect a buffer ampliﬁ er for impedance conversion to it so as to minimize the current

ﬂ ow. As the buffer ampliﬁ er, use a high input impedance operational ampliﬁ er with JFET or CMOS input.

Pin connections

KMPDA0202EE

Cat. No. KMPD1088E07 Jul. 2013 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of July, 2013.

CMOS linear image sensor S10077

Precautions

(1) Electrostatic countermeasures

This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electro-

static charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect

this device from surge voltages which might be caused by peripheral equipment.

(2) Incident window

If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the

window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton

swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so

that no spot or stain remains.

(3) Soldering

To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder-

ing should be performed within 5 seconds at a soldering temperature below 260 °C.

Related information

∙ Notice

∙ Image sensors/Precautions

Precautions