tm
August 2009
FCP9N60N / FCPF9N60NT N-Channel MOSFET
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. A
www.fairchildsemi.com1
SupreMOS
TM
FCP9N60N / FCPF9N60NT
N-Channel MOSFET
600V, 9A, 0.385Ω
Features
•R
DS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Ultra low gate charge ( Typ. Qg = 22nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
TO-220F
FCPF Series
G S
D
G D S
TO-220
FCP Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter FCP9N60N FCPF9N60NT Units
VDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage ±30 V
IDDrain Current -Continuous (TC = 25oC) 9.0 9.0* A
-Continuous (TC = 100oC) 5.7 5.7*
IDM Drain Current - Pulsed (Note 1) 27 27* A
EAS Single Pulsed Avalanche Energy (Note 2) 135 mJ
IAR Avalanche Current 3 A
EAR Repetitive Avalanche Energy 0.83 mJ
dv/dt MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 83.3 29.8 W
- Derate above 25oC0.670.24W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCP9N60N FCPF9N60NT Units
RθJC Thermal Resistance, Junction to Case 1.5 4.2
oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
*Drain current limited by maximum junction temperature
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCP9N60N FCP9N60N TO-220 - - 50
FCPF9N60NT FCPF9N60NT TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 1mA, Referenced to 25oC - 0.72 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μA
VDS = 480V, VGS = 0V, TC = 125oC - - 100
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.33 0.385 Ω
gFS Forward Transconductance VDS = 40V, ID = 4.5A - 7.5 - S
Ciss Input Capacitance VDS = 100V, VGS = 0V
f = 1MHz
- 930 1240 pF
Coss Output Capacitance - 35 50 pF
Crss Reverse Transfer Capacitance - 2 4 pF
Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 20 - pF
Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 106 - pF
Qg(tot) Total Gate Charge at 10V
VDS = 380V, ID = 4.5A,
VGS = 10V
(Note 4)
- 22.0 29 nC
Qgs Gate to Source Gate Charge - 4.1 - nC
Qgd Gate to Drain “Miller” Charge - 7.1 - nC
ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω
td(on) Turn-On Delay Time
VDD = 380V, ID = 4.5A
RG = 4.7Ω
(Note 4)
- 12.7 35.4 ns
trTurn-On Rise Time - 8.7 27.4 ns
td(off) Turn-Off Delay Time - 36.9 83.8 ns
tfTurn-Off Fall Time - 10.2 30.4 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 9.0 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 27 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.5A - - 1.2 V
trr Reverse Recovery Time VGS = 0V, ISD = 4.5A
dIF/dt = 100A/μs
- 213 - ns
Qrr Reverse Recovery Charge - 2.2 - μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10 20
0.1
1
10
100
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
2468
0.1
1
10
60
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250
μ
s Pulse Test
25oC
I
D
, Drain Current[A]
V
GS
, Gate-Source Voltage[V]
0 5 10 15 20 25
0.2
0.4
0.6
0.8
1.0
1.2
*Notes: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25
o
C
0.1 1 10 100 600
0
1000
2000
3000
4000
5000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
*Notes:
I
D
= 4.5A
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
_ FCPF9N60NT
Figure 11. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature
[
o
C
]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 4.5A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
1 10 100 1000
0.01
0.1
1
10
50
10
μ
s
100
μ
s
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
1 10 100 1000
0.01
0.1
1
10
100
10μs
100μs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
2
4
6
8
10
ID, Drain Current [A]
TC, Case Temperature
[
oC
]
_ FCP9N60N
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP9N60N
Figure 13. Transient Thermal Response Curve _ FCPF9N60NT
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.005
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θ
JC
(t) = 1.5
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
10-5 10-4 10-3 10-2 10-1 11010
2103
0.01
0.1
1
5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 3.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
L
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Volta
g
e D ro
p
VSD
I
FM
, B ody D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RG
Sam e Type
as D U T
VGS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
VDD
LL
ISD
10V
VGS
( D riv e r )
ISD
( D U T )
VDS
( DUT )
VDD
Body D iode
Forw ard Volta
g
e D ro
p
VSD
I
FM
, B ody D iode Forw ard C urrent
Body D iode R everse C urrent
IRM
Body D iode R ecovery dv/dt
di/dt
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
8
Dimensions in Millimeters
Mechanical Dimensions
TO-220
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com
9
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
FCP9N60N / FCPF9N60NT N-Channel MOSFET
FCP9N60N / FCPF9N60NT Rev. A www.fairchildsemi.com10
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Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
Fairchild®
Fairchild Semiconductor®
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FACT®
FAST®
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OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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may change in any manner without notice.
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make changes at any time without notice to improve the design.
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Rev. I41
