DCR1595SW37 - Dynex Semiconductor

DCR1595SW

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FEATURES

■Double Side Cooling

■High Surge Capability

APPLICATIONS

■High Power Drives

■High Voltage Power Supplies

■DC Motor Control

■Welding

■Battery Chargers

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table.

For example:

DCR1595SW38

Note: Please use the complete part number when ordering and

quote this number in any future correspondance relating to your

order.

KEY PARAMETERS

VDRM 4200V

IT(AV) (max) 3020A

ITSM (max) 53750A

dV/dt* 1000V/µs

dI/dt 400A/µs

* Higher dV/dt selections available

DCR1595SW

Phase Control Thyristor

Replaces October 2000 version, DS4248-5.0 DS4248-6.1 July 2001

Conditions

Tvj = 0˚ to 125˚C,

IDRM = IRRM = 400mA,

VDRM, VRRM tp = 10ms,

VDSM & VRSM =

VDRM & VRRM + 100V

respectively

Lower voltage grades available.

4200

4100

4000

3900

3800

3700

DCR1595SW42

DCR1595SW41

DCR1595SW40

DCR1595SW39

DCR1595SW38

DCR1595SW37

Part and Ordering

Number Repetitive Peak

Voltages

VDRM and VDRM

Fig. 1 Package outline

Outline type code: W

(See Package Details for further information)

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Symbol

IT(AV)

IT(RMS)

IT(AV)

IT(RMS)

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise.

Test Conditions

Half wave resistive load

Units

Max.

3020

4745

4370

1975

3105

2650

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

Symbol

IT(AV)

IT(RMS)

IT(AV)

IT(RMS)

Tcase = 80˚C unless stated otherwise.

Test Conditions

Half wave resistive load

Units

Max.

2380

3735

3360

1530

2405

1996

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

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Parameter

Surge (non-repetitive) on-state current

I2t for fusing

Surge (non-repetitive) on-state current

I2t for fusing

Test Conditions

10ms half sine, Tcase = 125˚C

VR = 50% VRRM - 1/4 sine

10ms half sine, Tcase = 125˚C

VR = 0

Symbol

ITSM

I2t

ITSM

I2t

SURGE RATINGS

Units

A2s

Max.

43.0

9.25 x 106

53.75

14.4 x 106

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Storage temperature range

Clamping force

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 70.0kN Double side

(with mounting compound) Single side

On-state (conducting)

Reverse (blocking)

THERMAL AND MECHANICAL RATINGS

Symbol

Rth(j-c)

Rth(c-h)

Tvj

Tstg

Units

˚CW

˚C

Max.

0.008

0.016

0.001

0.002

135

125

77.0

Min.

–55

63.0

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Parameter

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Delay time

Turn-off time

Latching current

Holding current

Test Conditions

At VRRM/VDRM, Tcase = 125˚C

To 67% VDRM, Tj = 125˚C, gate open

From 67% V

DRM

to 2x I

T(AV)

Repetitive 50Hz

Gate source 30V, 10Ω,

Non-repetitive

tr < 0.5µs, Tj = 125˚C

At Tvj = 125˚C

VD = 67% VDRM, gate source 30V, 15Ω

tr = 0.5µs, Tj = 25˚C

IT = 5000A, tp = 3.5ms, Tj =125˚C,

VR = 900V, dIRR/dt = 4A/µs,

VDR = 67% VDRM,

dVDR/dt = 20V/µs linear

Tj = 25˚C, VD = 5V

Tj = 25˚C, RG–K = ∞, ITM = 500A, IT = 5A

Symbol

IRRM/IRRM

dV/dt

dI/dt

VT(TO)

tgd

SURGE RATINGS

Units

V/µs

A/µs

mΩ

µs

Max.

400

1000

200

400

1.03

0.19

1000

250

Min.

0.5

550

220

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Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table fig. 8 and 9

Symbol

VGT

IGT

VGD

VFGM

VFGN

VRGM

IFGM

PGM

PG(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

400

0.25

150

Units

CURVES

Fig.2 Maximum (limit) on-state characteristics Fig.3 Maximum (limit) on-state characteristics

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.√IT

Where A = 0.02866651

B = 0.1590393

C = 1.947584x10–4

D = –5.23298x10–3

these values are valid for Tj = 125˚C for IT 500A to 10000A

0.5 1 1.5 2 2.5 3

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

Instantaneous on-state current, I

- (A)

Instantaneous on-state voltage, V

- (V)

= 125˚C

0.6 0.8 1.0 1.2 1.4 1.6

500

1000

1500

2000

2500

3000

3500

4000

Instantaneous on-state current, IT - (A)

Instantaneous on-state voltage, VT - (V)

Tj = 125˚C

1.8

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Fig.4 Sine wave power dissipation Fig.5 Sine wave power dissipation

Fig.6 Square wave power dissipation Fig.7 Square wave power dissipation

0500 1000 1500 2000 2500 3000

1000

2000

3000

4000

5000

6000

Mean on-state current, I

T(AV)

- (A)

Power loss - (W)

180˚

120˚

90˚

60˚

30˚

15˚

Conduction angle

0 200 400 600 800 1000 1200 1400

200

400

600

800

1000

1200

1400

1600

1800

2000

Mean on-state current, I

T(AV)

- (A)

Power loss - (W)

180˚

120˚

90˚

60˚

30˚

15˚

Conduction angle

D.C.

180˚

120˚

90˚

60˚

30˚

0 500 1000 1500 2000 2500

1000

2000

3000

4000

5000

6000

Mean on-state current, I

T(AV)

- (A)

Power loss - (W)

Conduction angle

3000 3500 4000

D.C.

180˚

120˚

90˚

60˚

30˚

0 200 400 600 800 1600

200

400

600

1400

1800

2000

Mean on-state current, I

T(AV)

- (A)

Power loss - (W)

Conduction angle

800

1000

1200

1600

1000 1200 1400

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Fig.8 Gate characteristics

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Gate trigger current, I

- (A)

Gate trigger voltage, V

- (V)

= 125˚C

= 25˚C

= -40˚C

Preferred gate drive area

Upper limit

Lower limit

Pulse Width

µs

100

200

500

1ms

10ms

150

100

150

100

400

150

125

100

Frequency Hz

Table gives pulse power P

in Watts

Fig.9 Gate characteristics

012345678910

Gate trigger current, I

- (A)

Gate trigger voltage, V

- (V)

Upper limit

Lower limit

10W

20W

50W

100W

150W

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Fig.10 Stored charge

Fig.12 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

Fig.11 Surge (non-repetitive) on-state current vs time

(with 50% VRRM at Tcase = 125˚C)

0.001 0.01 0.1 1.0 10

Time - (s)

0.01

0.1

0.001

0.0001

0.00001

Thermal impedance - ˚C/W

Double side cooled

Anode side cooled

Conduction

d.c.

half wave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case - ˚C/W

Double sided

0.0080

0.0088

0.0090

0.0100

Single sided

0.0160

0.0168

0.0170

0.0180

0.1 1.0 10

Rate of decay of on-state current dI/dt - (A/µs)

10000

1000

100

Total stored charge Q

- (µC)

Conditions:

= 50V

= 3000A

= 125˚CMax

Min

dI/dt

110

510150

Cycles at 50Hzms Duration

Peak half sinewave on-state current - (kA)

100

1.0

2.0

3.0

t value for fusing - (A

s x 10

)

4.0

5.0

6.0

7.0

8.0

9.0

10.0

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27.7

26.0

Cathode

Ø84.6 nom

Ø120 max

Anode

2 holes Ø3.6x2.0 deep (in both electrodes)

Cathode tab

Gate

Ø84.6 nom

Nominal weight: 2600g

Clamping force: 70kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: W

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless

stated otherwise. DO NOT SCALE.

DCR1595SW

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,

and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability

of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our

customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution

(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded

clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm

discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer

service office.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.