PHOTOCOUPLER
PS2706-1
AC INPUT RESPONSE
DARLINGTON TRANSISTOR
SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series−
DESCRIPTION
The PS2706-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlington-
connected phototransistor.
This is mounted in a plastic SOP (Small Out-line Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
• AC input response
• High current transfer ratio (CTR = 2 000 % TYP.)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• Small and thin (SOP) package
• High-speed switching (tr, tf = 200
µ
s TYP.)
• Ordering number of taping product: PS2706-1F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
• Hybrid IC
• Telephone, Exchange equipment
• FA/OA equipment
• Programmable logic controllers
ORDERING INFORMATION (Solder Contains Lead)
Part Number Package Safety Standard Approval
Standard specification products PS2706-1 4-pin SOP
• UL approved
PS2706-1-V 4-pin SOP VDE0884 specification products (Option)
ORDERING INFORMATION (Pb-Free)
Part Number Package Safety Standard Approval
Standard specification products PS2706-1-A 4-pin SOP
• UL approved
PS2706-1-V-A 4-pin SOP VDE0884 specification products (Option)
The mark shows major revised points.
Document No. PN10244EJ01V0DS (1st edition)
(Previous No. P11310EJ5V0DS00)
Date Published February 2003 CP(K)
PS2706-1
PACKAGE DIMENSIONS (in millimeters)
PS2706-1
4.0±0.5
7.0±0.3
4.4
0.5±0.3
0.15+0.10
–0.05
2.0
0.1±0.1
2.1±0.2
2.54
0.4+0.10
–0.05 0.25 M
TOP VIEW
1. Anode,Cathode
2. Cathode,Anode
3. Emitter
4. Collector
43
12
Data Sheet PN10244EJ01V0DS
2
PS2706-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF ±50 mA
Power Dissipation Derating
∆
PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current*1 IFP ±1 A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC 200 mA
Power Dissipation Derating
∆
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage*2 BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet PN10244EJ01V0DS 3
PS2706-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = ±5 mA 1.1 1.4 V
Terminal Capacitance Ct V = 0 V, f = 1 MHz 60 pF
Transistor Collector to Emitter Dark
Current ICEO IF = 0 mA, VCE = 40 V 400 nA
Coupled Current Transfer Ratio
(IC/IF) CTR IF = ±1 mA, VCE = 2 V 200 2 000 %
CTR Ratio*1 CTR1/
CTR2 IF = ±1 mA, VCE = 2 V 0.3 1.0 3.0
Collector Saturation
Voltage VCE (sat) IF = ±1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1 kVDC 1011
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time
*2 tr VCC = 5 V, IC = 2 mA, RL = 100 Ω 200
µ
s
Fall Time
*2 tf 200
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2
I
F1
I
F2
I
C1
I
C2
V
CE
*2 Test circuit for switching time
PW = 1 ms,
Duty cycle = 1/10
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
Input monitor
Data Sheet PN10244EJ01V0DS
4
PS2706-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE 200
150
100
50
025 50 75 100
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5 mW/˚C
50 000
1
1 000
5 000
100
10
10 000
500
50
5
–60 0 40 80–40 –20 20 60 100
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
5 V
2 V
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
300
10
0.1
30
0.3
100
3
1
0.6 1.2 1.6
0.4 0.8 1.4
1.0
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 10 mA
1 mA
0.5 mA
5 mA
0.2 mA
0.1 mA
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
80
60
40
20
0
–40
–60
–80
–20
–1.2 0 0.4 1.2 1.6–1.6 –0.8 –0.4 0.8
Data Sheet PN10244EJ01V0DS 5
PS2706-1
1.2
0.6
0.0
0.8
1.0
0.4
0.2
025 50 100
–50 –25 75
Ambient Temperature T
A
(˚C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;
Forward Current I
F
( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1 000
5
1
500
100
50
10
50 500 5 k
100 1 k
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
V
CC
= 5 V, I
C
= 2 mA,
CTR = 2 200 %
t
f
t
r
t
d
t
s
5 000
1
500
1 000
50
5
100
10
50 500 5 k1 k 10 k 50 k100
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
I
F
= 1 mA, V
CC
= 5 V,
CTR = 2 200 % t
f
t
s
t
r
t
d
µ
180
80
0
140
120
20
40
60
100
160
61024 8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
F
= 5 mA
0.5 mA
1 mA
2 mA
10
0
500
1 000
1 500
2 000
2 500
3 000
50 100 300
V
CE
= 2 V
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
8 000
9 000
10 000
10150.5
V
CE
= 2 V
Data Sheet PN10244EJ01V0DS
6
PS2706-1
1.2
1.0
0.0
0.4
0.2
0.8
0.6
102103
110
4105106
Time (Hr)
LONG TERM CTR DEGRADATION
CTR (Relative Value)
IF = 1 mA, TA = 60 ˚C
IF = 1 mA, TA = 25 ˚C
–10
–20
0
–5
–15
5
100
0.5 10.1 5 10 50
Frequency f (kHz)
Normalized Gain GV
FREQUENCY RESPONSE
IF = 1 mA,
VCE = 2 V
RL = 100 Ω
Remark The graphs indicate nominal characteristics.
Data Sheet PN10244EJ01V0DS 7
PS2706-1
TAPING SPECIFICATIONS (in millimeters)
Tape Direciton
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
11.9 to 15.4
Outer edge of
flange
17.5±1.0
13.5±1.0
13.0±0.2
φ
PS2706-1-F3 PS2706-1-F4
1.55±0.1
2.0±0.05
4.0±0.1
1.75±0.1
4.6±0.1
2.9 MAX.
0.3
8.0±0.1
Outine and Dimensions (Tape)
2.4±0.1
1.5
+0.1
–0
7.4±0.1
5.5±0.05
12.0±0.2
Data Sheet PN10244EJ01V0DS
8
PS2706-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
Data Sheet PN10244EJ01V0DS 9
PS2706-1
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10244EJ01V0DS
10
PS2706-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
710
850
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 5 mm
Creepage distance > 5 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg −55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
VIO = 500 V dc at TA MAX. at least 100 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi)
Tsi
Isi
Psi
Ris MIN.
150
200
300
109
°C
mA
mW
Ω
Data Sheet PN10244EJ01V0DS 11
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
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PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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