27
VTB Process Photodiode VTB1112BH, 1113BH
PRODUCT DESCRIPTION
S mall area p lan ar sil ico n ph otod iod e in a le nsed ,
dual lead TO-46 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have very
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 19 TO-46 LENSED HERMETIC
CHIP A CTIVE AREA : .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Te m per at u r e: -4 0°C t o 110° C
Oper ating Te mp eratu r e: -4 0°C t o 110° C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBO L CHARAC T ER I ST IC TEST C O ND IT I O N S VTB1112BH VTB1113BH UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 3.0 6.0 3.0 6.0 µA
TC ISC ISC Temperature Coefficient 2850 K .02 .08 .02 . 08 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV
TC VOC VOC Tem perature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 .31 .31 nF
λrange Spec tral Application Range 330 720 330 720 nm
λpSpectral Response - Peak 580 580 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±15 ±15 Degrees
NEP Noise Equivalent Power 5.3 x 10-14 (Typ.) 1.1 x 10-14 (Ty p.)
D* Specif ic Detectivit y 2.4 x 10 12 ( Typ.) 1.2 x 10 13 (Typ.) WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
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