VTB Process Photodiode VTB1112BH, 1113BH PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC R SH CJ CHARACTERISTIC Typ. 3.0 6.0 Max. Min. Typ. 3.0 6.0 UNITS Max. H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .02 Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 G RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. D* Min. VTB1113BH Short Circuit Current range NEP VTB1112BH TEST CONDITIONS .08 A .02 .08 100 330 720 20 330 720 580 2 40 2 15 -14 (Typ.) nm V 15 Degrees x 10-14 5.3 x 10 1.1 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) 27 nm 40 Specific Detectivity Phone: 877-734-6786 Fax: 450-424-3413 pA 580 Noise Equivalent Power Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 %/C (Typ.) www.excelitas.com W Hz cm Hz W