1/2
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
General Purpose Transistor (50V, 0.15A)
2SA1774EB
Applications Dimensions (Unit : mm)
General purpose small signal amplifier.
Features
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
Structure
PNP silicon epitaxial.
planar transistor.
Absolute maximum (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Parameter
V
CBO
V
CEO
V
EBO
P
D
Tj
Tstg
−60 V
V
V
mA
mW
°C
°C
−50
−6
−150I
C
I
CP
−200
150
150
−55 to +150
Symbol Limits Unit
∗1
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
∗2
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Parameter Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−50
−60
−6
−
−
−
120
−
−
−
−
−
−
−
−
−
140
4.0
−
−
−
−100
−100
−0.5
390
−
5.0
VI
C
=−1mA
I
C
=−50μA
I
E
=−50μA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V, I
C
=−1mA
V
CE
=−12V, I
E
=2mA, f=100MHz
V
CE
=−12V, I
E
=0A, f=1MHz
V
V
nA
nA
V
−
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
hFE rank categories
Rank Q R
h
FE
120 to 270 180 to 390
(1) Base
(2) Emitter
(3) Collector
Each lead has same dimensions
1.6
0.26
0.5 0.5
1.0
1.6
0.86
0.37
0.37
(1) (2)
(3)
0.45
0.7
0.13
0.45
EMT3F
Abbreviated symbol : F∗
∗ = Denotes h
FE
2/2
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
Data Sheet 2SA1774EB
Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
−0.2
COLLECTOR CURRENT : Ic (
mA)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
VCE= −6V
BASE TO EMITTER VOLTAGE : VBE (
V
)
Ta=100˚C
25˚C
−40˚C
Fig.2 Grounded emitter output
characteristics (I)
−0.4
−4
−8
−1.20
−2
−6
−10
−0.8 −1.6 −2
.0
−3.5μA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
IB=0
Ta=25˚C −35.0
COLLECTOR CURRENT : IC (
mA)
COLLECTOR TO MITTER VOLTAGE : VCE (
V
)
Fig.3 Grounded emitter output
characteristics (II)
−40
−80
−
5
−3−4−2−1
−20
−60
−100
0I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
−50μA
−100
−150
−200
−250
−500
−450
−400
−350
−300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50 −10
0
DC CURRENT GAIN : h
FE
Ta=25˚C V
CE
= −5V
−3V
−1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50−10
0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : IC (
mA)
VCE= −6V
Ta=100˚C
−40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (
I)
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −10
0
−1
−0.5
−0.2
−0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=50
20
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
V
)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −10
0
−1
−0.5
−0.2
−0.05
COLLECTOR CURRENT : I
C
(mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
V)
Fig.8 Gain bandwidth product vs.
emitter current
50 10
0
0.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
= −12V
Fig.9
Collector output capacitance vs
.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V
)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
−0.5 −20
2
5
10
−1−2−5−10
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
R0039
A
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