General Purpose Transistor (50V, 0.15A) 2SA1774EB Dimensions (Unit : mm) Applications General purpose small signal amplifier. EMT3F Features 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 (1) 0.5 0.5 1.0 0.45 (3) 0.37 Structure PNP silicon epitaxial. planar transistor. 0.45 1.6 0.86 0.37 0.26 (2) 0.13 Each lead has same dimensions (1) Base (2) Emitter (3) Collector = Denotes hFE Abbreviated symbol : F Absolute maximum (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V IC -150 Collector current Power dissipation Junction temperature Range of storage temperature mA ICP 1 -200 PD 2 150 mW Tj 150 C Tstg -55 to +150 C 1 Pw=1ms Single pulse 2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -50 - - V IC=-1mA Collector-base breakdown voltage BVCBO -60 - - V IC=-50A Emitter-base breakdown voltage BVEBO -6 - - V IE=-50A Collector cutoff current ICBO - - -100 nA VCB=-60V Emitter cutoff current IEBO - - -100 nA VEB=-6V VCE(sat) - - -0.5 V IC/IB=-50mA/-5mA hFE 120 - 390 - VCE=-6V, IC=-1mA Transition frequency fT - 140 - MHz Output capacitance Cob - 4.0 5.0 pF Collector-emitter saturation voltage DC current gain Conditions VCE=-12V, IE=2mA, f=100MHz VCE=-12V, IE=0A, f=1MHz hFE rank categories Rank Q R hFE 120 to 270 180 to 390 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.C 2SA1774EB Data Sheet Electrical characterristic curves -5 -2 -1 -0.5 -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -24.5 -17.5 -4 -10.5 -7.0 -2 -3.5A -0.4 -0.8 -1.2 -1.6 25C 50 -500 -450 -400 -350 -300 -250 -150 -40 -100 -20 -50A IB=0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) Ta=100C -40C 200 Ta=25C -200 IB=0 -2.0 500 100 -60 Fig.2 Grounded emitter output characteristics (I) DC CURRENT GAIN : hFE 100 50 -1 Ta=25C -0.5 -0.2 IC/IB=50 -0.1 20 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) -0.2 -0.1 Ta=100C 25C -40C -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25C VCE= -12V lC/lB=10 -2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) -0.5 -0.2 -0.5 -1 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) -1 VCE= -6V -5 -10 -20 -50 -100 -2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE -14.0 -80 COLLECTOR TO MITTER VOLTAGE : VCE (V) VCE= -5V -3V -1V 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -21.0 -6 0 Fig.1 Grounded emitter propagation characteristics Ta=25C -28.0 -8 BASE TO EMITTER VOLTAGE : VBE (V) 500 -100 -31.5 COLLECTOR CURRENT : IC (mA) -10 -35.0 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -20 -10 VCE= -6V Ta=100C 25C -40C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta=25C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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