FAIRCHILD SEMICONDUCTOR Taal Pn FAIRCHILD Ee A Schlumberger Company ay Ty 34b5674 UUersce wT 2N/PN/MPS/FTSO2369 2N/PN/MPS/FTSO2369A, 2N/FTSO5769 7"""~ NPN High Speed Saturated Switches Veeo ... 15 (Min) ts... 13 ns (Max) @ 10 mA ABSOLUTE MAXIMUM RATINGS Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 400 C Case Temperature 25C Case Temperature Voltages & Currents Vceo Collector to Emitter Voltage (Note 4) Collector to Base Voltage Vces Collector to Emitter Voltage Veso Emitter to Base Voltage Io Collector Current (Pulse = 10 ys) Veso ton ... 12 ns (Max) @ 10 mA, for .-- 18 ns (Max) @ 10 mA Complements ... 2N4209 (TO18), 2N5771 (TO92) PACKAGE 2N2369 TO-18 2N2369A TO-18 2N5769 TO-92 PN2369 TO-92 (Note 1) PN2369A TO-92 MPS2369 TO-92 MPS/PN2369/A MPS2369A TO-92 FTSO2369/69A FTSO2369 TO-286AA/AB 2N2369/69A 2N/FTSOS769 FTSO2369A TO-236AA/AB ~65 C to 200 C -55C to 150C FTSO5769 TO-236AA/AB 200 C 150C . 2N5769 2N2369/A PN/MPS FTSO 0.36 W 0.625 W 0.350 W* 0.68 W 0.260 W 12W 10W 15V 40 V 40V 45V 200 mA 500 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2369A 2369 5769 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown| 40 40 Vv Io = 10 pA, Vee = 0 Voltage BVcso Collector to Base Breakdown 40 40 Vv lc = 10 pA, Vac = 0 Voltage BVeso Emitter to Base Breakdown 45 45 Vv le =10 pA, tb = 0 Voltage NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 G and junction-to-case thermal resistance of 146CAW (derating factor of 6.65 mW/* C); junction-to-arnbient thermal resistance of 486 C/W (derating factor of 2.06 mW/ C) for 2N2369, 2N2369A, PN2369 and PN2369A. These ratings give a maximum junction temperature of 150 C and junction-to-case thermal resistance of 125 CAW (erating factor of 8.0 mW/? C}; junction-to-amblent thermal resistance of 200C/W (derating factor of 5.0 mW/* C) for MPS2369 and 2N5769; (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/ C). OOD Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 zs; duty cycle < 2%. For product family characteristic curves, refer to Curve Set T132. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. A IE en 3-246FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR as 2 Tee By DEM 3465674 OOe?Se? b Tr 84D 27527 Dm 2N/PN/MPS/FTSO2369 2N/PN/MPS/FTSO2369A 2N/FTSO5769 T-36-1S5- ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2369A 2369 5769 SYMBOL } CHARACTERISTIC. MIN MAX | MIN MAX | UNITS TEST CONDITIONS lezo Collector Cutoff Current 400 400 nA |Vca = 20V, le = 0 30 30 vA | Ves = 20V, le = 0, Ta = 150C hee DC Pulse Current Gain 40 | 120 lo = 10 MA, Vee = 1.0 V (Note 5) 20 Io = 100 MA, Vee = 2.0 V 40 120 Ic = 10 MA, Voce = 0.35 V 30 Ie = 30 mA, Vee =04V 20 Io = 100 MA, Voce = 1.0 V 20 le = 10 mA, Vce = 1.0 v, Ta = -55C 20 lc = 10 MA, Vee = 0.35 V, Ta = -5 Cc Veeotsuss | Collector to Emitter Sustaining | 15 15 Vv Ic = 10 mA (pulsed), Is = 0 Voltage (Notes 4 & 5) Vetisan Collector to Emitter Saturation , 0.25 Vv Ic =10 mA, lp = 1.0 mA Voltage (Note 5) 0.2 Vv lo =10 mA, le = 1.0 mA 0.25 Vv le = 30 mA, lp =3.0mMA 0.5 Vv lc = 100 mA, ls = 10 MA 0.3 Vv lo = 10 mA, tp = 10 mA, Ta = 125C Vecieat Base to Emitter Saturation 0.70 | 0.85 | 0,70 | 0.85 Vv lo = 10 mA, lp = 1.0 mA Voltage (Note 5) Cob Output Capacitance 4.0 4.0 pF Ves =5.0 V, le = 0, f =140 kHz Nte High Frequency Current Gain | 5.0 5.0 Ie = 10 MA, Vce = 10 V, f = 100 MHz Ts Charge Storage Time Constant 13 13 ns Ie = 10 mA, lai = faz = 10 MA, (test circuit no. 3111) Veo = 10V ton Turn On Time 12 12 ns lo =10 mA, lei = 3.0 mA, (test circult no. 210) Veo =3.0 V tort Turn Off Time 18 18 ns | lco=10MA, la: = 3.0 mA, (test circuit no. 210) lne = 1.5 MA, Voc = 3.0 V MPS2369 SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown 40 Vv Ic = 10 pA, Vez = 0 Voltage BVcso Collector to Base Breakdown 40 Vv Ic = 10 pA, Vee = 0 Voltage BVeso Emitter to Base Breakdown Voitage 4.5 Vv le = 10 pA, Ic =0 Iczo Collector Cutoff Current 400 nA Vee = 20 V, fe = 0, Ta = 150C Ices Collector Cutoff Current 30 pA | Vea = 20V, le =0, Ta = 125C (rrr a ener a 3-247[FAIRCHILD SEMICONDUCTOR By DE Bsyede74 ooe7ses oO t ns FAIRCHILD fe A Schlumberger Company Transi stor 3469674 FAIRCHILD SEMICONDUCTOR 84D 27529 pm 2N2405 T~-279-23 NPN Low Power Audio Frequency ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE 2N2405 TO-39 Temperatures Storage Temperature -65C to 200C Operating Junction Temperature 176C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 1.0 W a 25C Case Temperature 5.0 W a Voltages & Currents Vceo Collector to Emitter Voltage 90 V (Note 4) Vcso Collector to Base Voltage 140 V Veso Emitter to Base Voltage 7.0V Ic Collector Current 1.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS BVcer Collector to Emitter Breakdown 140 Vv Ic = 100 mA, Ree = 10 22 Voltage BV cso Collector to Base Breakdown 120 Vv Io = 100 pA, ie = 0 Voltage BVeso Emitter to Base Breakdown Voltage 7.0 Vv le = 100 pA, Ic = 0 leso Emitter Cutoff Current 10 nA Ves = 5.0 V Iczo Collector Cutoff Current 10 nA | Vea = 90 V 10 pA Ves = 90 V, le = 0, Ta = 150C LVceo Collector to Emitter Sustain Voltage 90 Vv lc =30 mA 90 Vv fe = 100 mA hee DC Pulse Current Gain (Note 5) 60 200 Ic = 150 mA, Vee = 10 V hre DC Current Gain (Note 5) 35 jo = 10 mA, Voce = 10 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175C and junction-to-case thermal resistance of 30C/W (derating factor of 3.33 mW/*C): junction-to-ambient thermal resistance of 150 C/W (derating factor of 6.6 mW/ C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1.8%. 6. For product family characteristic curves, refer to Curve Set T149. ES TT a Fo 3-249_FAIRCHILD SE i ~ WLaL or EMICONDUCTOR au DE ayese74 g027530 & I 3469674 FAIRCHILD SEMICONDUCTOR 84D 27530 D: 2N2405 T-29-23, ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS Veeisan Collector to Emitter Saturation Voltage 0.5 Vv Io = 150 mA, ls = 15 MA Veetsan Base to Emitter Saturation Voltage 1.4 Vv Io = 150 mA, la = 15 MA Cob Output Capacitance 15 pF Vop = 10 V, le = 0, f = 1.0 MHz Civ input Capacitance 80 pF Ves = 0.5 V, Ile =O Nie Current Gain 50 275 Ic = 5.0 MA, Vce = 5.0 V, f = 1.0 kHz i Nie Input Resistance 4 8 o tc = 5.0 MA, Vee = 10 V, f = 1.0 kHz Nob Output Conductance 0.5 pmhos | Ic = 5.0 mA, Vca = 10 V, f = 1.0 kHz hip Voltage Feedback Ratio 3 x10 | Ic =5.0 mA, Vos = 10 V, f = 1.0 kHz 3-250IFAIRCHILD SEMICONDUCTOR "er ay DE sues po27531 4 i 3469674 FAIRCHILD SEMICONDUCTOR es geen gn ereceameionl FAIRCHILD en ee A Schlumberger Company Vczo ... 60 V (Min) hre ... 100-500 (2N/PN/FTSO2484), 250-500 (2N/FTSO3117) @ 10 vA 84D 27531 D; 2N2484/FTSO2484 PN2484 o 2N3117/FTSO3117 NPN Low Level Low Noise Amplifiers NE... 3.0 dB (Max) (2N/PN/FTSO2484), 1,0 dB (Max) (2N/FTSO3117) @ 1.0 kHz, 2.0 dB (Max) (2N/PN/FTSO2484), 1.0 dB (Max) (2N/FTSO3117) @ 10 kHz ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE 2N2484 TO-18 2N3117 TO-18 PN2484 TO-92 FTSO02484 TO-236AA/AB FTSO3117 TO-236AA/AB 2N2484 200C Temperatures 2N3117 PN/FTSO Storage Temperature ~B5C to 200C -55C to 150C -65C to 300C Operating Junction Temperature 200C 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N PN 25 C Ambient Temperature 0.36 mW 0.625 W 25C Case Temperature 1.2W 1.0W Total Dissipation at FTSO 25 C Ambient Temperature 0.350 W* Voltages & Currents Vceo Collector to Emitter Voltage 60 V (Note 4) Veso Collector to Base Voltage 60 V Veeo Emitter to Base Voltage 6.0V le Collector Current 50 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 2484 3117 SYMBOL | CHARACTERISTIC MIN MAX} MIN MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown 60 60 Vv Ic = 10 pA, te =0 Voltage BVeso Emitter to Base Breakdown 6.0 6.0 Vv fe = 10 pA, Ie = 0 Voltage Iceo Collector to Emitter Cutoff 2.0 nA Vce = 5.0 V, Ip = 0 Current leso Emitter Cutoff Current 10 10 nA Ves = 5.0 V, Ilo =0 ics0 Collector Cutoff Current 10 10 nA Vea = 45 V, le = 0 10 10 pA Vos = 45 V, le =0, Ta = 150C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired 9. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200C and junction-to-case thermal resistance of 147 GW (derating factor of 6.85 mW/? C); junction-to-ambient thermal resistance of 485 C/W (derating factor of 2.06 mW? GC) for 2N2484 and 2N3117. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/? C); junction-to-ambient thermal resistance of 200 CAW (derating factor of 5.0 mW/* C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/* C). > 5. Pulse conditions: tength = 300 ps: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T107. * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. 3-251 Rating refers to a high current point where collector to emitter voltage is lowest. |FAIRCHILD SEMICONDUCTOR au DE sues go27s32 0 5 3469674 FAIRCHILD SEMICONDUCTOR 84D 27532 Da 2N2484/FTSO2484 PN2484 T-28.03 2N3117/FTSO3117 i ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2484 3117 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS hee DC Gurrent Gain (Note 5) 800 lo = 10 mA, Vce = 5.0 V 250 400 le =1.0mA, Voe = 5.0 V 200 Ic = 500 vA, Vce = 5.0 V 175 300 Io = 100 pA, Vee = 5.0 V 100 | 500 | 250 | 500 lo = 10 WA, Vee = 5.0 V 30 100 lo = 1.0 pA, Vee = 5.0 V i 20 50 Io =10 pA, Vee = 5.0 V, Ta = 55C Vceorsus) | Collector to Emitter Sustaining | 60 60 V Ic = 10 mA (pulsed), Is = 0 Voltage (Notes 4 & 5) 2484 3117 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST GONDITIONS Veetsats Collector to Emitter Saturation 0.35 0.35 Vv Ic = 1.0 mA, lp = 0.1 MA Voltage (Note 5) Veecon) Base to Emitter On Voltage | 0.5 | 0.7 0.7 Vv Io = 100 A, Vee = 5.0 V Cop Output Capacitance 6.0 45 pF Vca = 5.0 V, le = 0, f= 140 kHz Co input Capacitance 6.0 6.0 pF Vee = 0.5 V, Ic =0, f= 140 kHz ie High Frequency Current Gain | 2.0 2.0 le = 0.5 mA, Vee = 5.0 V, f = 30 MHz 3.0 Io = 50 BA, Voce = 5.0 V, f = 5.0 MHz 150 | 900 | 400 | 900 Io = 1.0 MA, Voce = 5.0 V, f = 1.0 kHz hie Input Resistance 3.5 | 24 | 10 | 24 kQ | lo = 1.0 MA, Voe = 5.0 V, f= 1.0 kHz Hoe Output Conductance 40 40 umhos | lo = 1.0 mA, Vce = 5.0 V, f = 1.0 kHz Nie Reverse Voltage Feedback Ratio, 800 800 | x10 |Ic = 1.0 mA, Voe =5.0 V, f + 1.0 kHz NF Wide Band Noise Figure 3,0 dB Ilo = 10 pA, Voce = 5.0 V, Rs = 10k, Power Bandwidth of 15.7 KHz with 3.0 dB pts at 10 Hz and 10 kHz 3-252FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 2N2484/FTSO2484 PN2484 2N3117/FTSO3117 ay DE f)s4edn74 0027533 1 i 84D 27533 Dm "T-AQ-2~B Electrical Characteristics (25C Ambient Temperature unless otherwise noted) Symbol Characteristic Min. _ Max. Units Test Conditions NF Narrow Band Noise Figure 3.0 2.0 10 1.0 1.0 4.0 1.5 dB dB dB dB dB dB dB Ic = 10 nA, Voce = 5.0 V, f = 1.0 kHz, Rs = 10 kO Power Bandwidth of 200 Hz Ie =10 pA, Vee =5.0 V, f = 10 kHz, Rs = 10 ko, Power Bandwidth of 2.0 kHz ; lc = 10 A, Vez = 5.0 V, 3 f= 100 Hz, Rs = 10 kO, RE Power Bandwidth of 20 Hz lo = 5.0 BA, Vce = 6.0 V, f= 1.0 kHz, Rs = 50 kQ, Power Bandwidth of 200 Hz Ic = 5.0 pA, Vee = 5.0 V, f = 10 kHz, Rs = 50 ka, Power Bandwidth of 1.0 kHz le =30 BA, Vee = 5.0 V, f = 100 kHz, Rs = 10 k0, Power Bandwidth of 20 Hz Ic = 30 BA, Vee =5.0 Vv, f= 10 Hz, Rs = 10 ko, Power Bandwidth of 2.0 Hz 3-253IFAIRCHILD SEMICONDUCTOR ay DE Bp sucse74 go27534 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27534 D! 2N2586 7-24.23 NPN Low Level Low Noise Type Pee To eee Dann FAIRCHILD Pe A Schlumberger Company ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE 2N2586 TO-18 Temperatures Storage Temperature ~65 C to 200C Operating Junction Temperature 175C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 0.4 W 25C Case Temperature 1.8W Voltages & Currents Vceo Collector to Emitter Voltage 45V (Note 4) Vcso Collector to Base Voltage 60 V Veso Emitter to Base Voitage 6.0V Ic Collector Current 30 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage 60 Vv lo = 10 pA, le =O BVeso Emitter to Base Breakdown Voltage 6.0 Vv le =10 pA, Ic =0 lceo Collector to Emitter Cutoff Current 2.0 nA Voce = 5.0 V, la = 0 Ices Collector to Emitter Cutoff Current 2.0 nA | Vce = 45 V, Vee = 0 10 pA | Vee = 45 V, Vee = 0, Ta = 170C Iceo Collector Cutoff Current 2.0 nA Ves = 45 V, le =O leso Emitter Cutoff Current - 2.0 nA Ves = 5.0 V, lo =O hre DC Pulse Current Gain (Note 5) 600 Ic = 10 MA, Vce = 5.0 V hre DC Current Gain 150 Io = 500 pA, Voe =5.0V 120 | 360 Ic = 10 pA, Voz = 5.0 V 80 Io = 1.0 pA, Vee = 5.0 V 40 Io = 10 pA, Vee = 5.0 V, Ta = 55C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175 C and junction-to-case thermal resistance of 250 C/W (derating factor of 4.0 mW/C); junction-to-ambient thermal resistance of 500 C/W (derating factor of 2.0 mW/* C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys; duty cycle < 2%. 6. For product family characteristic curves, refer to Curve Set T107. 3-254FAIRCHILD SEMICONDUCTOR ay DEB se9b74 go0e7535 5 3469674 FAIRCHILD SEMICONDUCTOR 2N2586 84D 27535 De J- AS -Q4 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise nated) (Note 6) SYMBOL | CHARACTERISTIC MIN j;MAX | UNITS TEST CONDITIONS : Vceowus | Collector to Emitter Sustaining Voltage | 45 Vv Ic = 10 mA, lp =O : (Notes 4 & 5) j Veersan Collector to Emitter Saturation Voltage 0.5 Vv lc = 10 mA, Ip = 0.5 MA Vee Base to Emitter Voltage 0.7 0.9 Vv Io = 10 mA, is =0.5 mA Coto Common Base Open Circuit 7.0 pF Vos = 5.0 V, le = 0, f = 1.0 MHz Output Capacitance Nite High Frequency Current Gain 1.5 Ic = 500 vA, Voce = 5.0 V, f = 30 MHz hte Small Signal Current Gain 150 ; 600 lo = 1.0 MA, Vee = 5.0 V, f = 1.0 kHz hie Input Resistance 4.5 18 ko lo =1.0 MA, Voe = 5.0 V, f = 1.0 kHz Roe Output Admittance 100 | umhos | Ie = 1.0 MA, Vce = 5.0 V, f = 1.0 kHz NF Spot Noise Figure 2.0 dB Io = 1.0 pA, Vee = 5.0 V, Re = 1.0 MQ, f = 10 kHz 2.0 dB Io = 10 pA, Voce = 5.0 V, Re = 10 kO, f = 10 kHz 3.0 dB Ie = 10 pA, Voce = 5.0 V, Re = 10 kQ, f = 1.0 kHz 3.5 dB Ic = 1.0 pA, Vee = 5.0 V, Re = 1 MQ, f = 1.0 kHz 3-255 t i i } : g i