IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 22 40 S
Cies 4810 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 455 pF
Cres 80 pF
Qg(on) 150 nC
Qge IC = 70A, VGE = 15V, VCE = 0.5 • VCES 34 nC
Qgc 60 nC
td(on) 30 ns
tri 70 ns
Eon 2.00 mJ
td(off) 90 ns
tfi 75 ns
Eoff 0.95 1.40 mJ
td(on) 30 ns
tri 65 ns
Eon 3.00 mJ
td(off) 105 ns
tfi 115 ns
Eoff 1.40 mJ
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V
TJ = 150°C 1.4 1.8 V
IRM 8.3 A
trr 140 ns
RthJC 0.30 °C/W
IF = 60A, VGE = 0V, TJ = 100°C
-diF/dt = 200A/μs, VR = 300V
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190