New Product SM15T Series Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Supressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % DO-214AB (SMC) * Excellent clamping capability * Low inductance PRIMARY CHARACTERISTICS VBR 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only) 200 A TJ max. 150 C * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC * Halogen-free according to IEC 61249-2-21 definition APPLICATION NOTES MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 1A whisker test per A 1500 W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit. Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types TYPICAL APPLCIATIONS DEVICES FOR BI-DIRECTION APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. For bi-directional devices use CA suffix (e.g. SM15T12CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) PPPM (1)(2) 1500 W IPPM (1) See next table A PD 6.5 W 200 A - 65 to + 150 C Peak power pulse current with a 10/1000 s waveform (fig. 3) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 10 ms single half sine-wave uni-directional only Operating junction and storage temperature range IFSM (2) TJ, TSTG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal Document Number: 89427 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM15T Series Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE MARKING CODE DEVICE TYPE (1) BREAKDOWN VOLTAGE VBR AT IT (V) (2) MIN. TEST CURRENT IT (mA) STAND-OFF LEAKAGE VOLTAGE CURRENT VRM IRM AT VRM (V) (A) (3) CLAMPING VOLTAGE VC AT IPP 10/1000 s MAX. (V) (A) CLAMPING VOLTAGE VC AT IPP 8/20 s (V) T MAX. 10-4/C UNI BI (A) SM15T6V8A GDE7 GDE7 6.45 7.14 10 5.80 1000 10.5 143 13.4 746 5.7 SM15T7V5A GDK7 BDK7 7.13 7.88 10 6.40 500 11.3 132 14.5 690 6.1 SM15T10A GDT7 BDT7 9.50 10.5 1.0 8.55 10.0 14.5 103 18.6 538 7.3 SM15T12A GDX7 BDX7 11.4 12.6 1.0 10.2 5.0 16.7 90.0 21.7 461 7.8 SM15T15A GEG7 GEG7 14.3 15.8 1.0 12.8 1.0 21.2 71.0 27.2 368 8.4 SM15T18A GEM7 BEM7 17.1 18.9 1.0 15.3 1.0 25.2 59.5 32.5 308 8.8 SM15T22A GET7 BET7 20.9 23.1 1.0 18.8 1.0 30.6 49.0 39.3 254 9.2 SM15T24A GEV7 GEV7 22.8 25.2 1.0 20.5 1.0 33.2 45.0 42.8 234 9.4 SM15T27A GEX7 BEX7 25.7 28.4 1.0 23.1 1.0 37.5 40.0 48.3 207 9.6 SM15T30A GFE7 BFE7 28.5 31.5 1.0 25.6 1.0 41.5 36.0 53.5 187 9.7 SM15T33A GFG7 GFG7 31.4 34.7 1.0 28.2 1.0 45.7 33.0 59.0 169 9.8 SM15T36A GFK7 BFK7 34.2 37.8 1.0 30.8 1.0 49.9 30.0 64.3 156 9.9 SM15T39A GFM7 BFM7 37.1 41.0 1.0 33.3 1.0 53.9 28.0 69.7 143 10.0 SM15T68A GGG7 GGG7 64.6 71.4 1.0 58.1 1.0 92.0 16.3 121 83 10.4 SM15T100A GGV7 GGV7 95.0 105 1.0 85.5 1.0 137 11.0 178 56 10.6 SM15T150A GHK7 GHK7 143 158 1.0 128 1.0 207 7.20 265 38 10.8 SM15T200A GHR7 GHR7 190 210 1.0 171 1.0 274 5.50 353 28 10.8 SM15T220A GHR8 GHR8 209 231 1.0 188 1.0 328 4.60 388 26 10.8 Notes (1) For bi-directional devices add suffix "CA" instead of "A" (2) V BR measured after IT applied for 300 s square wave pulse (3) For bipolar devices with V = 10 V or under, the I limit is doubled R T THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to ambient air RJA Typical thermal resistance, junction to lead (1) RJL VALUE UNIT 75 C/W 15 C/W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM15T10A-M3/57T 0.211 57T 850 7" diameter plastic tape and reel SM15T10A-M3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89427 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM15T Series Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 20 000 100 Measured at Zero Bias CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 10 000 10 1 0.31 x 0.31" (8.0 x 8.0 mm) Copper Pad Areas 0.1 0.1 s 1000 VR, Measured at Stand-Off Voltage, VWM 100 Uni-Directional Bi-Directional 10 1.0 s 10 s 100 s 1.0 ms 1 10 ms 10 100 400 VWM - Reverse Stand-Off Voltage (V) td - Pulse Width (s) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance Uni-Directional 100 100 Transient Thermal Impedance (C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (C) t - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave td 0 10 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only Document Number: 89427 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM15T Series Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89427 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. 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