UMC5N
Document number: DS31205 Rev. 4 - 2 1 of 5
www.diodes.com November 2011
© Diodes Incorporated
UMC5N
DUAL COMPLEMENTAR Y PRE-BIASED TRANSISTORS
Features
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT353
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
UMC5N-7 SOT353 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Bottom View Device Schematic
Package Pin Out
Confi
g
uration
R1 R2
Q
1
(3) (2) (1)
(4) (5)
Q
2
R2
R1
Q
1
R = 47k
1
Ω
R = 47k
2
Ω
Q
2
R = 10k
2
Ω
R = 4.7k
1
Ω
321
45
NP2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
NP2
YM
SOT353
UMC5N
Document number: DS31205 Rev. 4 - 2 2 of 5
www.diodes.com November 2011
© Diodes Incorporated
UMC5N
Maximum Ratings, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage VIN -10 to +40 V
Output Current IO 30 mA
Collector Current IC
(
MAX
)
100 mA
Maximum Ratings, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage VIN -20 to +7 V
Output Current IO -100 mA
Collector Current IC
(
MAX
)
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 150 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R
θ
JA 833 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage (Note 5) VI
(
OFF
)
0.5 ⎯ ⎯ V VCC = 5V, IO = 100μA
(Note 6) VI
(
ON
)
⎯ ⎯ 3 V
VO = 0.3V, IO = 2mA
Output Voltage VO
(
ON
)
⎯ 0.1 0.3 V
IO/ II = 10mA/0.5 mA
Input Current II ⎯ ⎯ 0.18 mA
VI = 5V
Output Current IO
(
OFF
)
⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V
DC Current Gain GI 68 ⎯ ⎯ ⎯ V
O = 5V, IO = 5mA
Gain-Bandwidth Product (Note 7) fT ⎯ 250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz
Input Resistance R1 32.9 47 61.1 kΩ ⎯
Resistance Ratio R2/R1 0.8 1 1.2
⎯ ⎯
Notes: 5. The device is guaranteed to be in “OFF” state with VI(OFF) up to 0.5V
6. The device is guaranteed to be in “ON” state with VI(ON) starting from 3V
7. Characteristic of Transistor – for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage VI
(
OFF
)
-0.3 ⎯ ⎯ V VCC = -5V, IO = -100μA
VI
(
ON
)
⎯ ⎯ -2.5 V
VO = -0.3V, IO = -20mA
Output Voltage VO
(
ON
)
⎯ -0.1 -0.3 V IO/ II = -10mA/-0.5 mA
Input Current II ⎯ ⎯ -1.8 mA
VI = -5V
Output Current IO
(
OFF
)
⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V
DC Current Gain GI 30 ⎯ ⎯ ⎯ VO = -5V, IO = -10mA
Gain-Bandwidth Product (Note 7) fT ⎯ 250 ⎯ MHz VCE = -10V, IE = 5mA, f = 100MHz
Input Resistance R1 3.29 4.7 6.11 kΩ ⎯
Resistance Ratio R2/R1 1.7 2.1 2.6 ⎯ ⎯
Notes: 8. The device is guaranteed to be in “OFF” state with VI(OFF) up to -0.3V
9. The device is guaranteed to be in “ON” state with VI(ON) starting from -2.5V
10. Characteristic of Transistor – for reference only.
UMC5N
Document number: DS31205 Rev. 4 - 2 3 of 5
www.diodes.com November 2011
© Diodes Incorporated
UMC5N
1
10
100
1,000
I , OUTPUT CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Output Current
(Q1, NPN)
O
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
O
0.1 1 10 100
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 20
OI
0.1
1
10
0.01 0.1 1 10
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
CC
0.1
1
10
0.01 0.1 1 10 100
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 0.3V
O
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -5V
O
0.01
0.1
1
110100
-I , OUTPUT CURRENT (mA)
Fig. 6 Typical Output Voltage vs. Output Current
(Q2, PNP)
O
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 20
OI
UMC5N
Document number: DS31205 Rev. 4 - 2 4 of 5
www.diodes.com November 2011
© Diodes Incorporated
UMC5N
0.1
1
10
0.01 0.1 1 10
-I , OUTPUT CURRENT (mA)
Fig . 7 Typi cal Input Off Volt age vs. Output Cur rent
(Q2, PNP)
O
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -5V
CC
0.1
1
10
-I , OUTPUT CURRENT (mA)
Fig . 8 Typi cal In put ON Volt age vs. Ou t put Cur rent
(Q2, PNP)
O
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -0.3V
O
Package Outline Dimensions
Suggested Pad Layout
SOT353
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2C2
G
UMC5N
Document number: DS31205 Rev. 4 - 2 5 of 5
www.diodes.com November 2011
© Diodes Incorporated
UMC5N
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
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