4YbE D MM 6367254 0092973 2 MEMOTET-3005 MOTOROLA SC (XSTRS/R F) MOTOROLA SEMICONDUCTOR Pe TECHNICAL DATA hutind 2C5339HV Chip NPN Silicon pMo Medium-Power Transistor . for use in switching and wide-band amplifier applications. D iSCr ete * Saturation Voltage 1.2 Vdc @ 5.0 Ade Mili tary e DC Current Gain 60-240 @ 2.0 Ade Op e ratio n Complementary to 2C6193 MAXIMUM RATINGS Rating Symbot Value Unit Coliector-Emitter Voltage VCEO 100 Vde Collector-Base Voitage VoBo 100 Vde B & Emutter-Base Voltage VEBO 6.0 Vde Collector Current Ic 5.0 Adc Base Current IB 1.0 Ade Power Dissipation @ Ta = 25C Pr 1.0 Watts Oerate above 25C 5.71 mwrc Physi sical Storage and Junction Temperature Range Tstq. TJ 65 to +200 C y 4 Characteristics: ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Die Size 112 x 112 mils Characteristic |__ Symbol Min Max unit Die Thickness OFF CHARACTERISTICS 10-14 mits Collector Cutott Current IcEO ~ 100 pAde Bond Pad Size: : (Vop = 100 Vde) Emitter 21 x 34 mils Base 21 x 33 mils Covector Cutot Current IcBo _ 10 pAdc Back Metal (Vep = 100 Vac) Titanium . 1000 A (Nom) Collector Cutoff Current ICEX Nickel ... 3000 A (Nom) (VCE = 90 Vde, Vag = 1.5 Vde} 10 pAdc Silver .. 20,000 A (Nom) (VCE = 90 Vde, VBE = 1.5 Vdc, Ta = 150C) - 1.0 mAdc Top Metal Emitter Cutoff Current ERO _ 400 pAde 60 kA Alum. (Nom) (VEp = 6.0 Vde) Back Side = Collector Pulsed Pulse Width 250 to 350 us. Duty Cycle 1 0 to 2 0%. (continued) DISCRETE MILITARY OPERATION DATA 3-277WBE D MM 6367254 0092974 4 MEMOTL MOTOROLA SC (XSTRS/R F) 2C5339HV ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic | symbot [ min =| Max Unit ON CHARACTERISTICS ; DC Current Gain* hee - (ic = 500 mAdc, VcE = 2.0 Vde) 60 _ (Io = 2.0 Ade, Vog = 2.0 Vde) 60 240 (Ig = 5.0 Ade, Vg = 2.0 Vde) 40 = (Ig = 2.0 Adc, Veg = 2.0 Vdc, Ta 2 -55C) 12 _ Collector-Emitter Saturation Voltage VcE(sat) Vde (Iq = 2.0 Adc, Ig = 0 2 Adc) _ 0.7 (Ic = 5.0 Ade, Ip = 0.5 Adc) ' _ 12 Base-Emitter Saturation Voltage VBE(sat) Vde (Ig = 2.0 Ade, Ip = 0.2 Adc) _ 12 (Ic = 5.0 Ade, Ig = 0.5 Ade) _ 1.8 SMALL-SIGNAL CHARACTERISTICS Small-Signal Current Transfer Ratio, Magnitude Intel 3.0 15 _ (Ig = 500 mAdc, Voce = 10 Vde, f = 1.0 MHz) Output Capacitance Cobo _ 250 pF (Vp = 10 Vie, f = 100 kHz - 1.0 MHz) Input Capacitance Cibo _ 1000 pF VBE = 2.0 Vde, f = 100 kHz) SWITCHING CHARACTERISTICS (Ic = 2.0 Adc, Ip = 200 mAdc) Delay Time ta _ 100 ns Rise Time + tr _ 100 ns Storage Time ts _ 2.0 BS Fail Time 4 _ 200 ns ASSURANCE TESTING (Pre/Post Burn-in) Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current IsBO ~ 10 pAde (VcB = 100 Vde) DC Current Gain* hee 60 240 - {Io = 2.0 Ade, Voce = 2.0 Vde) Detta from Pre-GBurn-In Measured Values Min Max Delta Collector Cutoff Current AlcBo _ +100 % of Inttal Value - or 1.0 pAdc whichever Is greater Delta OC Current Gain* AhFE _ 215 % of inital Value * Puised Pulse Width 250 to 350 ys Duty Cycle 1 0 to 2 0% DISCRETE MILITARY OPERATION DATA 3-278