SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$S$196 Unit in mm FEATURES: Small Package SOT-2 3M0D 2 Ho : = dct Low Forward Voltage : Vp=0.9V(Typ.) +1 w . Fast Reverse Recovery Time try=l.6ns (Typ. ) 8 2% 3 Q Small Total Capacitance Cy=0.9pF (Typ.) al cl 3 ne a 3 1 cH | 1 + al a] qo . 3d aa +1 MAXIMUM RATINGS (Ta=25C) $a | 4 3 CHARACTERISTIC SYMBOL RATING UNIT 71 i 4 Maximum (Peak) Reverse Voltage] Vpm 85 Vv | 20 Reverse Voltage VR 80 V rj 3 Maximum (Peak) Forward Current IFM 300 mA qe Average Forward Current Ilo 100 mA L. ANODE Surge Current (10ms) IFsM 2 A 2 NC, Power Dissipation P 150 mW & CATHODE JEDEC - Junction Temperature Tj 125 C FRIAS S0-59 Storage Temperature Range Tstg ~55~ 125 C TOSHIBA 1-3G1A Weight : 0.012g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.| UNIT VF(1)_ | Ip=lmA - [0.60 = Forward Current VF(2) Tp=10mA - 0.72 - Vv VF(3) Ip=100mA - 10.90 11.20 Reverse Current IR Vp=80V - - 0.5 HA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr Ip=lOmA, Fig.1 - 1.6 | 4.0 ns 1131 Marking BR 8 G} [3)1$$196 IR VR 190 A < < 3 & wl fe H Ht g & z f -) fa 10 e E D o o fs] wn a = 10 < > = a) o ino Fey 1 9 20 40 60 105 az O4 a6. a8 10 412 REVERSE VOLTAGE Vp (V) FORWARD VOLTAGE Vp (V) Cr VR ~ & = * a Ta=25C ~ g Fig, 1 a He oO Ee > e] S z < 5 B oO H & Q ina a ie < a oD 4 iso) 1 > < iQ & om Oo et Oz 1 3 10 30 100 200 1 as 1 3 10 REVERSE VOLTAGE Vp CV) FORWARD CURRENT Tp (mA) Fig. 1. REVERSE RECOVERY TIME (try) TEST CIRCUIT INPUT OUTPUT WAVEFORM WAVEFORM INPUT O.O1F DUT 0 OUTPUT 7 a Ip=10ma a a g -6V M 3% SAMPLING 0 c x a sg 8 S & OSCILEOSCOPR Ee E 0 CRyy=500) TR 5Ons PULSER GENERATOR (Royt=50Q) 80 30. 650 rr 1132 O1tR