13PD75LDC-ST, -SMA, -FC, -SC
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 13PD75LDC-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-
46 header and aligned in an AT&T ST active device mount, is a low-dark-current version of the 13PD75-ST
intended for high speed and low noise applications. Planar semiconductor design and dielectric passivation
provide superior low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in
(200°C, 15 hours, Vr = 20V). The ST receptacle is suitable for bulkhead and PC Board mounting.
High Speed InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
GHz
–20
0.11
0.9
0.5
0.7
0.8
1.5
0.65
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
5mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
