Ordering number:N 4703 DZF6.8 to 36 Silicon Diffused Junction Type 1W Zener Diode Features - Plastic mold package. - Voltage regulator use. - Allowable power dissipation : P=1W. - Subdivided voltage range : 6.8 to 36V. : Zener voltage tolerance: +10% Absolute Maximum Ratings at Ta= 25C unit Allowable Power Dissipation P 10 #W Junction Temperature Tj 150 C Storage Temperature Tstg 40te +150 C Package Dimensions 1261 (unit : mm) 29.0 ,3.0 t { | j c iL o A C: Cathode A: Anode 29.0 Mi No products described or contained herein are intended for use in surgica! implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the lixe, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault er negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only: it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN _ 93094MO (KOTO) AX-9033 No.4703-1/2DZF6.8 to 36 Electrical Characteristics at Ta = 25C . Zener Characteristics Temperature Forward Voltage Reverse Current i ro Zener Voltage Dynamic |Current at Coefficient Vv P Currentat | y,' | Voltage at ripen Resistance] which. Z Fo |which Veis! P| which Ip is ype No. z d Vz,rgare measured measured {V] [9] measured [mvV/ C] (Vv) [vA] 2 min typ max max {mA] typ max max [A] _ max [Vv] - DZF6.8 6.2 6.8 7A 60 10 3 4 1,2 0.2 10 3.0 DZF7.5 | 68 | 75 | 83 | 30 10 4 5 | 12 0.2 10 4.5 DZF8.2 T.4 8.2 9.1 30 10 4 6 1.2 0.2 10 49 DZF9.1 8.2 9.1 10.1 30 10 5 8 1.2 0.2 10 5.5 DZF10 9.0 10 11.0 30 10 6 9 1.2 0.2 10 6.0 DZF11 9.9 11 12.1 30 10 7 11 1.2 0.2 10 7.0 DZF12 10.8 12 13.2 30 10 8 13 1,2 0.2 10 8.0 DZF13 11.7 13 14.3 30 10 9 14 1.2 0.2 10 9.0 DZF15 13.6 15 16.5 30 10 11 17 1.2 0.2 10 10.0 DZF16 14.4 16 17.6 36 10 12 19 1.2 0.2 10 11.0 DZF18 16.2 18 19.8 30 10 14 23 | 1.2 0.2 10 13.0 D2F20 18.0 20 22.0 30 10 16 26 1.2 0.2 10 14.0 DZF22 19.8 22 24.2 30 10 18 28 1.2 0.2 16 16.0 D2F24 21.6 24 26.4 30 10 20 32 12 0.2 10 17.0 DZF27 24.3 27 29,7 30 10 23 36 1.2 0.2 10 19.0 B2F30 27.0 30 33.0 30 10 25 40 1.2 0.2 10 21.0 D2F33 29.7 33 36.3 30 10 26 41 1.2 0.2 10 26.4 DZF36 $2.4 a6 39.6 30 9 28 45 1.2 0.2 10 28.8 vz - V2 3 P2(surge) tw 48 O44 1 JL : sp 7 ons os 100 => fe 3 E 32 L 0.1038 3 a ef SS 2 Be aot oS e A 3s / gf 8 _ 5 > 16 3 os iS SF 7 Ee FS g BS 4 y omES 10 o L S md G wo 20 30 40 50 6 we 0.1 24 . 10 c 2 10 Zener Voltage,Vz V Pulse Width,t,, ms = Rth{j-a) - t P - Ta oS 1.2 a = 3 Voy 100 N i FI N as 3 oa & % NY 5 a7 g , a 06 ~ @ : e a OL is 2 3 L z a NX 8 1.0 0 NN oo STom 2s 5793 1.0 10 0 2 40 60 8 00 120 10. 160 8 Time,t s | 5. Ambient Temperature,Ta = C No.4703-2/2