BAS316WS
Taiwan Semiconductor
1 Version: E2007
250mA, 100V High-Speed Switching SMD Diode
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-323F
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 4.60mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF
250
mA
VRRM
100
V
VF at IF = 150mA
1.25
V
TJ MAX
150
°C
Package
SOD-323F
Configuration
Single die
SOD-323F
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
BAS316WS
UNIT
W2
VRRM
100
V
IF
250
mA
Non-repetitive peak forward surge current
Pulse Width = 1μs
IFSM
4
A
Pulse Width = 1ms
1
TJ
-65 to +150
°C
TSTG
-65 to +150
°C
BAS316WS
Taiwan Semiconductor
2 Version: E2007
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance
RӨJA
351
°C/W
Note: Units mounted on PCB (10mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNIT
Forward voltage(1)
IF = 1.0mA, TJ = 25°C
VF
-
0.715
V
IF = 10mA, TJ = 25°C
-
0.855
V
IF = 50mA, TJ = 25°C
-
1.000
V
IF = 150mA, TJ = 25°C
-
1.250
V
Reverse voltage
IR = 100µA, TJ = 25°C
VR
100
-
V
Reverse current @ rated VR(2)
VR = 25V TJ = 25°C
IR
-
0.03
µA
VR = 75V TJ = 25°C
-
1.00
µA
Junction capacitance
1MHz, VR = 0V
CJ
-
1.5
pF
Reverse recovery time
IF = 10mA, IR = 10mA,
Irr = 1mA
trr
-
4.0
ns
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
BAS316WS RR
SOD-323F
3K / 7" Reel
BAS316WS RRG
SOD-323F
3K / 7" Reel
BAS316WS R9
SOD-323F
10K / 13" Reel
BAS316WS R9G
SOD-323F
10K / 13" Reel
Notes:
1. "G" means green compound (halogen-free)
BAS316WS
Taiwan Semiconductor
3 Version: E2007
0
50
100
150
200
250
300
0 0.4 0.8 1.2 1.6
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig.2 Reverse Current VS. Junction Temperature
Fig.3 Power Dissipation Curve
Fig.4 Typical Junction Capacitance
0.01
0.1
1
10
100
020 40 60 80 100 120 140 160 180 200
VR=75V
VR=75V
VR=25V
Typ
Typ
Max
0
50
100
150
200
250
025 50 75 100 125 150
0
0.2
0.4
0.6
0.8
0 2 4 6 8 10 12 14 16
REVERSE CURRENT (uA)
INSTANTANEOUS FORWARD VOLTAGE (V)
POWER DISSIPATION (mW)
AMBIENT TEMPERATURE (oC)
JUNCTION CAPACITANCE (pF)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
REVERSE VOLTAGE (V)
JUNCTION TEMPERATURE (OC)
INSTANTANEOUS FORWARD CURRENT (mA)
BAS316WS
Taiwan Semiconductor
4 Version: E2007
PACKAGE OUTLINE DIMENSION
SOD-323F
SUGGEST PAD LAYOUT
BAS316WS
Taiwan Semiconductor
5 Version: E2007
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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