19-0530; Rev 1; 12/07 175V/2A, High-Speed, Half-Bridge MOSFET Drivers The MAX15012/MAX15013 high-frequency, 175V halfbridge, n-channel MOSFET drivers drive high- and lowside MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from input to output, are matched to within 2ns (typ). The high-voltage operation with very low and matched propagation delay between drivers, and high source/sink current capabilities make these devices suitable for the high-power, high-frequency telecom power converters. A reliable on-chip bootstrap diode connected between V DD and BST eliminates the need for an external discrete diode. The MAX15012A/C and MAX15013A/C offer both noninverting drivers (see the Selector Guide). The MAX15012B/D and MAX15013B/D offer a noninverting high-side driver and an inverting low-side driver. The MAX15012A/B/C/D feature CMOS (VDD/2) logic inputs. The MAX15013A/B/C/D feature TTL logic inputs. The drivers are available in the industry-standard 8-pin SO footprint and pin configuration and a thermally enhanced 8-pin SO package. All devices operate over the -40C to +125C automotive temperature range. Features HIP2100/HIP2101 Pin Compatible (MAX15012A/C and MAX15013A/C) Up to 175V Input Operation 8V to 12.6V VDD Input Voltage Range 2A Peak Source and Sink Current Drive Capability 35ns Typical Propagation Delay Guaranteed 8ns Propagation Delay Matching Between Drivers Up to 500kHz Switching Frequency Available in CMOS (VDD/2) or TTL Logic-Level Inputs with Hysteresis Up to 14V Logic Inputs Independent of Input Voltage Low 2.5pF Input Capacitance Low 70A Supply Current Versions Available with Combination of Noninverting and Inverting Drivers (MAX15012B/D and MAX15013B/D) Available in Industry-Standard 8-Pin SO and Thermally Enhanced SO Packages Applications Ordering Information Telecom Half-Bridge Power Supplies Two-Switch Forward Converters Full-Bridge Converters PART TEMP RANGE PINPACKAGE PKG CODE MAX15012AASA+ -40C to +125C 8 SO Active-Clamp Forward Converters MAX15012BASA+ -40C to +125C 8 SO Power-Supply Modules MAX15012CASA+* -40C to +125C 8 SO-EP** S8E+14 Motor Control MAX15012DASA+* -40C to +125C 8 SO-EP** S8E+14 Pin Configurations and Typical Operating Circuit appear at the end of data sheet. S8-5 S8-5 Ordering Information continued at end of data sheet. +Denotes lead-free package. *Future product--contact factory for availability. **EP = Exposed pad. Selector Guide PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE MAX15012AASA+ Noninverting Noninverting CMOS (VDD/2) HIP 2100IB MAX15012BASA+ Noninverting Inverting CMOS (VDD/2) -- MAX15012CASA+ Noninverting Noninverting CMOS (VDD/2) HIP 2100IB MAX15012DASA+ Noninverting Inverting CMOS (VDD/2) -- MAX15013AASA+ Noninverting Noninverting TTL HIP 2101IB MAX15013BASA+ Noninverting Inverting TTL -- MAX15013CASA+ Noninverting Noninverting TTL HIP 2101IB MAX15013DASA+ Noninverting Inverting TTL -- ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. 1 MAX15012/MAX15013 General Description MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND, unless otherwise noted.) VDD, IN_H, IN_L......................................................-0.3V to +14V DL ...............................................................-0.3V to (VDD + 0.3V) HS............................................................................-5V to +180V DH to HS.....................................................-0.3V to (VDD + 0.3V) BST to HS ...............................................................-0.3V to +14V dV/dt at HS ........................................................................50V/ns Continuous Power Dissipation (TA = +70C) 8-Pin SO (derate 5.9mW/C above +70C)...............470.6mW 8-Pin SO-EP (derate 19.2mW/C above +70C) .....1538.5mW Junction-to-Case Thermal Resistance (JC)(Note 1) 8-Pin SO .......................................................................40C/W 8-Pin SO-EP....................................................................6C/W Junction-to-Ambient Thermal Resistance (JA)(Note 1) 8-Pin SO .....................................................................170C/W 8-Pin SO-EP..................................................................52C/W Maximum Junction Temperature .....................................+150C Operating Temperature Range .........................-40C to +125C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C *Per JEDEC 51 Standard Multilayer board. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a fourlayer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial. ELECTRICAL CHARACTERISTICS (VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40C to +125C, unless otherwise noted. Typical values are at VDD = VBST = +12V and TA = +25C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 12.6 V 140 A 3 mA 15 40 A 3 mA 7.3 8.0 V 6.9 7.8 POWER SUPPLIES Operating Supply Voltage VDD (Notes 3 and 4) VDD Quiescent Supply Current (No Switching) IDD IN_H = IN_L = GND (for A/C versions), IN_H = GND, IN_L = VDD (for B/D versions) VDD Operating Supply Current IDDO fSW = 500kHz, VDD = +12V BST Quiescent Supply Current IBST IN_H = IN_L = GND (for A/C versions), IN_H = GND, IN_L = VDD (for B/D versions) BST Operating Supply Current IBSTO 8.0 70 fSW = 500kHz, VDD = VBST = +12V UVLO (VDD to GND) UVLOVDD VDD rising 6.5 UVLO (BST to HS) UVLOBST BST rising 6.0 UVLO Hysteresis V 0.5 V 0.67 x VDD 0.55 x VDD V 2 1.65 LOGIC INPUT Input-Logic High VIH_ MAX15012_, CMOS (VDD/2) version MAX15013_, TTL version Input-Logic Low VIL_ MAX15012_, CMOS (VDD/2) version MAX15013_, TTL version Logic-Input Hysteresis 2 VHYS 0.4 x VDD 0.33 x VDD 1.4 0.8 MAX15012_, CMOS (VDD/2) version 1.6 MAX15013_, TTL version 0.25 _______________________________________________________________________________________ V V 175V/2A, High-Speed, Half-Bridge MOSFET Drivers (VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40C to +125C, unless otherwise noted. Typical values are at VDD = VBST = +12V and TA = +25C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS -1 +0.001 +1 A VIN_L = VDD for MAX15012B/MAX15012D/ MAX15013B/MAX15013D Logic-Input Current I_IN VIN_H = 0V VIN_L = 0V for MAX15012A/MAX15012C/ MAX15013A/MAX15013C IN_H to GND Input Resistance RIN IN_L to VDD for MAX15012B/MAX15012D/ MAX15013B/MAX15013D 1 M 2.5 pF IN_L to GND for MAX15012A/MAX15012C/ MAX15013A/MAX15013C Input Capacitance CIN HIGH-SIDE GATE DRIVER HS Maximum Voltage VHS_MAX VDD 10.5V (Note 4) 175 V BST Maximum Voltage VBST_MAX VDD 10.5V (Note 4) 189 V Driver Output Resistance (Sourcing) RON_HP VDD = 12V, IDH = 100mA (sourcing) Driver Output Resistance (Sinking) RON_HN VDD = 12V, IDH = 100mA (sinking) TA = +25C 2.5 3.3 TA = +125C 3.5 4.6 TA = +25C 2.1 2.8 TA = +125C 3.2 4.2 DH Reverse Current (Latchup Protection) (Note 5) Power-Off Pulldown Clamp Voltage VBST = 0V or floating, IDH = 1mA (sinking) Peak Output Current (Sourcing) Peak Output Current (Sinking) IDH_PEAK 400 mA 0.94 1.16 V CL = 10nF, VDH = 0V 2 A CL = 10nF, VDH = 12V 2 A LOW-SIDE GATE DRIVER Driver Output Resistance (Sourcing) RON_LP VDD = 12V, IDL = 100mA (sourcing) TA = +25C 2.5 3.3 TA = +125C 3.5 4.6 Driver Output Resistance (Sinking) RON_LN VDD = 12V, IDL = 100mA (sinking) TA = +25C 2.1 2.8 TA = +125C 3.2 4.2 Reverse Current at DL (Latchup Protection) (Note 5) Power-Off Pulldown Clamp Voltage VDD = 0V or floating, IDL = 1mA (sinking) 400 mA 0.95 1.16 V Peak Output Current (Sourcing) IPK_LP CL = 10nF, VDL = 0V 2 A Peak Output Current (Sinking) IPK_LN CL = 10nF, VDL = 12V 2 A INTERNAL BOOTSTRAP DIODE Forward Voltage Drop VF IBST = 100mA 0.91 Turn-On and Turn-Off Time tR IBST = 100mA 40 1.11 V ns _______________________________________________________________________________________ 3 MAX15012/MAX15013 ELECTRICAL CHARACTERISTICS (continued) MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers ELECTRICAL CHARACTERISTICS (continued) (VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40C to +125C, unless otherwise noted. Typical values are at VDD = VBST = +12V and TA = +25C.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (VDD = VBST = +12V) Rise Time Fall Time tR tF CL = 1000pF 7 CL = 5000pF 33 CL = 10,000pF 65 CL = 1000pF 7 CL = 5000pF 33 CL = 10,000pF ns ns 65 CMOS 30 55 35 63 Turn-On Propagation Delay Time tD_ON Figure 1, CL = 1000pF (Note 5) TTL Turn-Off Propagation Delay Time tD_OFF Figure 1, CL = 1000pF (Note 5) CMOS 30 55 TTL 35 63 Delay Matching Between DriverLow and Driver-High tMATCH CL = 1000pF, Figure 1 (Note 5) 2 8 Internal Nonoverlap Minimum Pulse Width Input Logic (Note 6) 1 tPW-min VDD = VBST = 12V 135 VDD = VBST = 8V 170 ns ns ns ns ns Note 2: All devices are 100% tested at TA = +125C. Limits over temperature are guaranteed by design. Note 3: Ensure that the VDD-to-GND or BST-to-HS transient voltage does not exceed 13.2V. Note 4: Maximum operating supply voltage (VDD) reduces linearly from 12.6V to 10.5V with its maximum voltage (VHS_MAX) increasing from 125V to 175V. See the Typical Operating Characteristics and Applications Information sections. Note 5: Guaranteed by design, not production tested. Note 6: See the Minimum Input Pulse Width section. 4 _______________________________________________________________________________________ 175V/2A, High-Speed, Half-Bridge MOSFET Drivers UNDERVOLTAGE LOCKOUT (VDD AND VBST RISING) vs. TEMPERATURE UVLOVDD 0.9 0.8 7.1 7.0 UVLOBST 6.8 0.7 VDD 2V/div 0.5 UVLOBST HYSTERESIS 0.4 0.3 0.2 6.6 0.1 0V IDD 50A/div 0A 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (C) TEMPERATURE (C) INTERNAL BST DIODE (I-V) CHARACTERISTICS 200 MAX15012/13 toc04 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 180 TA = +125C 160 TA = +25C 140 IDIODE (mA) TA = 0C 120 TA = -40C 100 80 60 40 20 0 0.5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VDD (V) 18 1.0 1.1 IBST (A) TA = +25C VBST = VDD + 1V, NO SWITCHING 15 TA = +125C 80 0.9 21 MAX15012/13 toc06 VDD = VBST VHS = GND IN_H = GND IN_L = VDD 100 0.8 BST QUIESCENT CURRENT vs. BST VOLTAGE 160 120 0.7 VDD - VBST (V) VDD QUIESCENT CURRENT vs. VDD (NO SWITCHING) 140 0.6 MAX15012/13 toc07 IDDO + IBSTO (mA) IDDO + IBSTO vs. VDD (fSW = 250kHz) 4ms/div MAX15012/13 toc05 6.5 IN_H = GND IN_L = VDD UVLOVDD HYSTERESIS 0.6 6.7 IDD (A) UVLO (V) 7.2 6.9 MAX15012/13 toc02 7.3 UVLO HYSTERESIS (V) 7.4 IDD vs. VDD MAX15012/13 toc03 1.0 MAX15012/13 toc01 7.5 VDD AND BST UNDERVOLTAGE LOCKOUT HYSTERESIS vs. TEMPERATURE 12 TA = +125C 9 60 6 40 3 20 TA = -40C TA = -40C, TA = 0C, TA = +25C 0 0 0 2 4 6 VDD (V) 8 10 12 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VBST (V) _______________________________________________________________________________________ 5 MAX15012/MAX15013 Typical Operating Characteristics (Typical values are at VDD = VBST = +12V and TA = +25C, unless otherwise specified.) Typical Operating Characteristics (continued) (Typical values are at VDD = VBST = +12V and TA = +25C, unless otherwise specified.) IDDO + IBSTO (mA) 8 7 6 5 4 3 2 1 0 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 MAX15012/13 toc09 CL = 0 SINKING 100mA -40 -25 -10 5 20 35 50 65 80 95 110 125 0 100 200 300 400 500 600 700 800 900 1000 FREQUENCY (kHz) TEMPERATURE (C) PEAK DH AND DL SOURCE/SINK CURRENT DH OR DL RISE TIME vs. TEMPERATURE (CL = 10nF) MAX15012/13 toc10 120 CL = 100nF 108 96 DH OR DL 5V/div VDD = VBST = 8V MAX15012/13 toc11 9 MAX15012/13 toc08 10 DH OR DL OUTPUT LOW VOLTAGE vs. TEMPERATURE OUTPUT LOW VOLTAGE (V) VDD AND BST OPERATING SUPPLY CURRENT vs. FREQUENCY tR (ns) 84 SINK AND SOURCE CURRENT 2A/div 72 60 VDD = VBST = 12V 48 36 24 12 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 1s/div TEMPERATURE (C) 100 90 VDD = VBST = 8V 80 70 60 50 VDD = VBST = 12V 40 30 55 50 45 DH 40 35 30 25 DL 20 15 20 10 10 5 0 6 60 MAX15012/13 toc13 110 PROPAGATION DELAY (ns) 120 DH OR DL RISE PROPAGATION DELAY vs. TEMPERATURE MAX15012/13 toc12 DH OR DL FALL TIME vs. TEMPERATURE (CLOAD = 10nF) tF (ns) MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (C) TEMPERATURE (C) _______________________________________________________________________________________ 175V/2A, High-Speed, Half-Bridge MOSFET Drivers DH OR DL FALL PROPAGATION DELAY vs. TEMPERATURE 175 40 VHS_MAX (V) PROPAGATION DELAY (ns) DH 45 35 30 MAX15012/13 toc15 55 50 VHS_MAX vs. VDD_MAX MAX15012/13 toc14 60 DL 25 125 20 15 10 5 0 0 8 -40 -25 -10 5 20 35 50 65 80 95 110 125 10.5 12.6 VDD_MAX (V) TEMPERATURE (C) DELAY MATCHING (DH/DL FALLING) DELAY MATCHING (DH/DL RISING) MAX15012/13 toc17 MAX15012/13 toc16 CL = 0 CL = 0 INPUT 5V/div INPUT 5V/div DH/DL 5V/div DH/DL 5V/div 10ns/div 10ns/div DH/DL RESPONSE TO VDD GLITCH MAX15012/13 toc18 DH 10V/div DL 10V/div VDD 10V/div INPUT 5V/div 40s/div _______________________________________________________________________________________ 7 MAX15012/MAX15013 Typical Operating Characteristics (continued) (Typical values are at VDD = VBST = +12V and TA = +25C, unless otherwise specified.) 175V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX15012/MAX15013 Pin Description PIN NAME 1 VDD Power Input. Bypass VDD to GND with a parallel combination of 0.1F and 1F ceramic capacitors. 2 BST Boost Flying Capacitor Connection. Connect a 0.1F ceramic capacitor between BST and HS for the high-side MOSFET driver supply. 3 DH High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate. 4 HS Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver. 5 IN_H High-Side Noninverting Logic Input 6 IN_L Low-Side Noninverting Logic Input (MAX15012A/C and MAX15013A/C). Low-side inverting logic input (MAX15012B/D and MAX15013B/D). 7 GND Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs. 8 DL Low-Side-Gate Driver Output. Drives low-side MOSFET gate. -- EP Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground plane to aid in heat dissipation (MAX15012C/D and MAX15013C/D only). IN_L (MAX15012A/C MAX15013A/C) FUNCTION VIH VIL 90% DL 10% tD_OFF1 tD_ON1 tF IN_L (MAX15012B/D MAX15013B/D) tR VIH VIL tD_OFF2 tD_ON2 VIH IN_H VIL 90% DH 10% tD_OFF3 tD_ON3 tF tMATCH = (tD_ON3 - tD_ON1) or (tD_OFF3 - tD_OFF1) FOR "A/C" VERSION tMATCH = (tD_ON3 - tD_ON2) or (tD_OFF3 - tD_OFF2) FOR "B/D" VERSION Figure 1. Timing Characteristics for Noninverting and Inverting Logic Inputs 8 _______________________________________________________________________________________ tR 175V/2A, High-Speed, Half-Bridge MOSFET Drivers The MAX15012/MAX15013 are 175V/2A high-speed, half-bridge MOSFET drivers that operate from a supply voltage of +8V to +12.6V. The drivers are intended to drive a high-side switch without any isolation device like an optocoupler or drive transformer. The high-side driver is controlled by a TTL/CMOS logic signal referenced to ground. The 2A source and sink drive capability is achieved by using low R DS_ON , p- and n-channel driver output stages. The BiCMOS process allows extremely fast rise/fall times and low propagation delays. The typical propagation delay from the logic-input signal to the driver output is 35ns with a matched propagation delay of 2ns typical. Matching these propagation delays is as important as the absolute value of the delay itself. The high 175V input voltage range allows plenty of margin above the 100V transient specification per telecom standards. The maximum operating supply voltage (VDD) must be reduced linearly from 12.6V to 10.5V when the maximum voltage (VHS_MAX) increases from 125V to 175V. See the Typical Operating Characteristics. escent current. The maximum on-time is dependent on the size of CBST, IBST (40A max), and UVLOBST. Output Driver The MAX15012/MAX15013 have low 2.5 RDS_ON pchannel and n-channel devices (totem pole) in the output stage. This allows for a fast turn-on and turn-off of the high gate-charge switching MOSFETs. The peak source and sink current is typically 2A. Propagation delays from the logic inputs to the driver outputs are matched to within 8ns. The internal p- and n-channel MOSFETs have a 1ns break-before-make logic to avoid any cross conduction between them. This internal break-before-make logic eliminates shoot-through currents reducing the operating supply current as well as the spikes at VDD. See the Minimum Input Pulse Width section to understand the effects of propagation delays on DH and DL. The DL voltage is approximately equal to VDD, the DHto-HS voltage is approximately equal to VDD minus a diode drop, when they are in a high state and to zero when in a low state. The driver RDS_ON is lower at higher VDD. Lower RDS_ON means higher source and sink currents and faster switching speeds. Undervoltage Lockout Internal Bootstrap Diode Both the high- and low-side drivers feature undervoltage lockout (UVLO). The low-side driver's UVLOLOW threshold is referenced to GND and pulls both driver outputs low when VDD falls below 6.8V. The high-side driver has its own UVLO threshold (UVLOHIGH), referenced to HS, and pulls DH low when BST falls below 6.4V with respect to HS. During turn-on, once VDD rises above its UVLO threshold, DL starts switching and follows the IN_L logic input. At this time, the bootstrap capacitor is not charged and the BST-to-HS voltage is below UVLOBST. For synchronous buck and half-bridge converter topologies, the bootstrap capacitor can charge up in one cycle and normal operation begins in a few microseconds after the BST-to-HS voltage exceeds UVLOBST. In the two-switch forward topology, the BST capacitor takes some time (a few hundred microseconds) to charge and increase its voltage above UVLOBST. The typical hysteresis for both UVLO thresholds is 0.5V. The bootstrap capacitor value should be selected carefully to avoid unintentional oscillations during turn-on and turn-off at the DH output. Choose the capacitor value about 20 times higher than the total gate capacitance of the MOSFET. Use a low-ESR-type X7R dielectric ceramic capacitor at BST (typically a 0.1F ceramic capacitor is adequate) and a parallel combination of 1F and 0.1F ceramic capacitors from VDD to GND. The high-side MOSFET's continuous on-time is limited due to the charge loss from the high-side driver's qui- An internal diode connects from VDD to BST and is used in conjunction with a bootstrap capacitor externally connected between BST and HS. The diode charges the capacitor from VDD when the DL low-side switch is on and isolates VDD when HS is pulled high as the highside driver turns on (see the Typical Operating Circuit). The internal bootstrap diode has a typical forward voltage drop of 0.9V and has a 10ns typical turn-off/turn-on time. For lower voltage drops from VDD to BST, connect an external Schottky diode between VDD and BST. Driver Logic Inputs (IN_H, IN_L) The MAX15012A/B/C/D are CMOS (VDD/2) logic-input drivers while the MAX15013A/B/C/D have TTL-compatible logic inputs. The logic-input signals are independent of VDD. For example, the IC can be powered by a 10V supply while the logic inputs are provided from a 12V CMOS logic. Also, the logic inputs are protected against voltage spikes up to 14V, regardless of the VDD voltage. The TTL and CMOS logic inputs have 250mV and 1.6V hysteresis, respectively, to avoid double pulsing during transition. The logic inputs are high-impedance pins and should not be left floating. The low 2.5pF input capacitance reduces loading and increases switching speed. The noninverting inputs are pulled down to GND and the inverting inputs are pulled up to VDD internally using a 1M resistor. The PWM output from the controller must assume a proper state while powering up the device. With the logic inputs floating, the DH and DL outputs pull low as VDD rises up above the UVLO threshold. _______________________________________________________________________________________ 9 MAX15012/MAX15013 Detailed Description MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers Minimum Input Pulse Width The MAX15012/MAX15013 use a single-shot level-shifter architecture to achieve low propagation delay. Typical level shifter architecture causes a minimum (high or low) pulse width (tDmin) at the output that may be higher than the logic-input pulse width. For the MAX15012/ MAX15013 devices, the DH minimum high pulse-width (tDmin-DH-H) is lower than the DL minimum low pulse width (t Dmin-DL-L) to avoid any shoot-through in the absence of external BBM delay during the narrow pulse at low duty cycle. See Figure 2. At high duty cycle (close to 100%), the DH minimum low pulse width (tDmin-DH-L) must be higher than the DL minimum low pulse width (tDmin-DL-L) to avoid the overlap and shoot-through. See Figure 3. In case of the MAX15012/MAX15013, there is a possibility of about 40ns overlap if an external BBM delay is not provided. It is recommended to add external delay in the INH path so that the minimum low pulse width seen at INH is always longer than t PW-min . See the Electrical Characteristics table for the typical values of tPW-min. VDD VIN PW-MIN INH DH N VOUT HS INL DL N MAX15012B/ MAX15012D/ MAX15013B/ MAX15013D PW-MIN tDMIN-DH-H DH IN-BUILT DEAD TIME DL tDMIN-DL-L Figure 2. Minimum Pulse-Width Behavior for Narrow Duty-Cycle Input (On-Time < tPW-min) 10 ______________________________________________________________________________________ 175V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX15012/MAX15013 VDD VIN EXTERNAL BBM DELAY PW-MIN INH DH N VOUT HS INL DL N MAX15012B/ MAX15012D/ MAX15013B/ MAX15013D VDD EXTERNAL BBM DELAY PW-MIN VIN INH DH N VOUT HS DL INL N MAX15012A/C MAX15013A/C PW-MIN tDMIN-DH-L EXTERNAL BBM DELAY DH POTENTIAL OVERLAP TIME DL tDMIN-DL-H Figure 3. Minimum Pulse-Width Behavior for High Duty-Cycle Input (Off-Time < tPW-min) ______________________________________________________________________________________ 11 MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers Applications Information Supply Bypassing and Grounding Pay extra attention to bypassing and grounding the MAX15012/MAX15013. Peak supply and output currents may exceed 4A when both drivers are driving large external capacitive loads in-phase. Supply drops and ground shifts create forms of negative feedback for inverters and may degrade the delay and transition times. Ground shifts due to insufficient device grounding may also disturb other circuits sharing the same AC ground return path. Any series inductance in the VDD, DH, DL, and/or GND paths can cause oscillations due to the very high di/dt when switching the MAX15012/ MAX15013 with any capacitive load. Place one or more 0.1F ceramic capacitors in parallel as close to the device as possible to bypass V DD to GND. Use a ground plane to minimize ground return resistance and series inductance. Place the external MOSFET as close as possible to the MAX15012/MAX15013 to further minimize board inductance and AC path resistance. Power Dissipation Power dissipation in the MAX15012/MAX15013 is primarily due to power loss in the internal boost diode and the nMOS and pMOS FETs. For capacitive loads, the total power dissipation for the device is: PD = CL x VDD2 x fSW + (IDDO + IBSTO ) x VDD where CL is the combined capacitive load at DH and DL. VDD is the supply voltage and fSW is the switching frequency of the converter. PD includes the power dissipated in the internal bootstrap diode. The internal power dissipation reduces by PDIODE, if an external bootstrap Schottky diode is used. The power dissipation in the internal boost diode (when driving a capacitive load) is the charge through the diode per switching period multiplied by the maximum diode forward voltage drop (Vf = 1V). Layout Information The MAX15012/MAX15013 drivers source and sink large currents to create very fast rise and fall edges at the gates of the switching MOSFETs. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled. Use the following PC board layout guidelines when designing with the MAX15012/MAX15013: * It is important that the VDD voltage (with respect to ground) or BST voltage (with respect to HS) does not exceed 13.2V. Voltage spikes higher than 13.2V from VDD to GND or BST to HS can damage the device. Place one or more low ESL 0.1F decoupling ceramic capacitors from VDD to GND, and from BST to HS as close as possible to the part. The ceramic decoupling capacitors should be at least 20 times the gate capacitance being driven. * There are two AC current loops formed between the device and the gate of the MOSFET being driven. The MOSFET looks like a large capacitance from gate to source when the gate is being pulled low. The active current loop is from the MOSFET driver output (DL or DH) to the MOSFET gate, to the MOSFET source, and to the return terminal of the MOSFET driver (either GND or HS). When the gate of the MOSFET is being pulled high, the active current loop is from the MOSFET driver output, (DL or DH), to the MOSFET gate, to the MOSFET source, to the return terminal of the drivers decoupling capacitor, to the positive terminal of the decoupling capacitor, and to the supply connection of the MOSFET driver. The decoupling capacitor is either the flying capacitor connected between BST and HS or the decoupling capacitor for VDD. Care must be taken to minimize the physical length and the impedance of these AC current paths. PDIODE CDH x (VDD - 1) x fSW x Vf The total power dissipation when using the internal boost diode is P D and, when using an external Schottky diode, is PD - PDIODE. The total power dissipated in the device must be kept below the maximum of 0.471W for the 8-pin SO package at TA = +70C ambient. 12 ______________________________________________________________________________________ 175V/2A, High-Speed, Half-Bridge MOSFET Drivers VIN = 0 TO 175V* VDD = 8V TO 12.6V VDD BST N DH MAX15012A/C IN_H MAX15013A/C PWM CONTROLLER HS IN_L N DL VOUT GND PIN COMPATIBLE WITH THE HIP2100/HIP2101 *DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS. Figure 4. MAX15012A/MAX15013A Half-Bridge Conversion VDD = 8V TO 12.6V VIN = 0 TO 175V* CBST VDD BST DH PWM IN_H MAX15012A/C N HS VOUT MAX15013A/C IN_L DL N GND *DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS. Figure 5. Two-Switch Forward Conversion ______________________________________________________________________________________ 13 MAX15012/MAX15013 Typical Application Circuits 175V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX15012/MAX15013 Functional Diagrams MAX15012A/C MAX15012B/D VDD/2 CMOS VDD/2 CMOS BST 2 5 IN_H DH 3 BST 2 5 IN_H DH HS 4 VDD 1 6 IN_L DL 8 HS 4 VDD 1 6 IN_L DL 8 GND 7 GND 7 SO SO MAX15013A/C MAX15013B/D TTL TTL BST 2 BST 2 5 IN_H DH 3 5 IN_H DH IN_L DL 8 6 IN_L DL 8 GND 7 GND 7 SO 14 3 HS 4 VDD 1 HS 4 VDD 1 6 3 SO ______________________________________________________________________________________ 175V/2A, High-Speed, Half-Bridge MOSFET Drivers VIN = 0 TO 175V* VDD = 8V TO 12.6V VDD CBST BST DH PWM IN_H N MAX15012B/D MAX15013B/D VOUT HS IN_L DL N GND *DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS. Pin Configurations TOP VIEW 1 DH MAX15012A/B MAX15013A/B 3 HS 4 TEMP RANGE PINPACKAGE PKG CODE MAX15013AASA+ -40C to +125C 8 SO MAX15013BASA+ -40C to +125C 8 SO 7 GND MAX15013CASA+* -40C to +125C 8 SO-EP** S8E+14 MAX15013DASA+* -40C to +125C 8 SO-EP** S8E+14 6 IN_L 5 IN_H 8 BST 2 PART DL + VDD Ordering Information (continued) S8-5 S8-5 +Denotes lead-free package. *Future product--contact factory for availability. **EP = Exposed pad. SO Chip Information + VDD 1 BST 2 DH 3 MAX15012C/D MAX15013C/D HS 4 8 DL 7 GND 6 IN_L 5 IN_H TRANSISTOR COUNT: 790 PROCESS: HV BiCMOS SO-EP ______________________________________________________________________________________ 15 MAX15012/MAX15013 Typical Operating Circuit Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) DIM A A1 B C e E H L N E H INCHES MILLIMETERS MAX MIN 0.069 0.053 0.010 0.004 0.014 0.019 0.007 0.010 0.050 BSC 0.150 0.157 0.228 0.244 0.016 0.050 MAX MIN 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 1.27 BSC 3.80 4.00 5.80 6.20 0.40 SOICN .EPS MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers 1.27 VARIATIONS: 1 INCHES TOP VIEW DIM D D D MIN 0.189 0.337 0.386 MAX 0.197 0.344 0.394 MILLIMETERS MIN 4.80 8.55 9.80 MAX 5.00 8.75 10.00 N MS012 8 AA 14 AB 16 AC D A B e C 0-8 A1 L FRONT VIEW SIDE VIEW PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, .150" SOIC APPROVAL DOCUMENT CONTROL NO. 21-0041 16 ______________________________________________________________________________________ REV. B 1 1 175V/2A, High-Speed, Half-Bridge MOSFET Drivers 8L, SOIC EXP. PAD.EPS PACKAGE OUTLINE 8L SOIC, .150" EXPOSED PAD 21-0111 C 1 1 ______________________________________________________________________________________ 17 MAX15012/MAX15013 Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) MAX15012/MAX15013 175V/2A, High-Speed, Half-Bridge MOSFET Drivers Revision History REVISION NUMBER REVISION DATE 0 5/06 Initial release 1 12/07 Added exposed paddle versions of the MAX15012A/B and MAX15013A/B, added Figures 2 and 3 and added SO-EP package outline DESCRIPTION PAGES CHANGED -- 1-4, 8-11, 13-17 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 18 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 (c) 2007 Maxim Integrated Products Heaney is a registered trademark of Maxim Integrated Products, Inc.