053-7052 Rev - 10-2002
MS1079
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
V
CBO Collector-Base Voltage 110 V
VCEO Collector-Emitter Voltage 55 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 12 A
PDISS Power Dissipation 320 W
TJ Junction Temperature +200 °
°°
°C
TSTG Storage Temperature -65 to +150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.7 °
°°
°C/W
Features
• 30 MHz
• 50 VOLTS
• POUT = 220 W
• GP = 13 dB MINIMUM
• COMMON EMITTER CONFIGURATION
053-7052 Rev - 10-2002
MS1079
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCBO I
C = 200mA IE = 0mA 110 --- --- V
BVCEO I
C = 200mA IB = 0mA 55 --- --- V
BVEBO I
E = 20mA IC = 0mA 4.0 --- --- V
ICEO V
CE = 30V IE = 0mA --- --- 5 mA
ICES V
CE = 55V IE = 0mA --- --- 10 mA
hFE V
CE = 6V IC = 10A 15 --- 80 ---
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f =30 MHz VCE = 50 V ICQ=150mA 220 --- --- WPEP
Gp f =30 MHz VCE = 50 V ICQ=150mA 13 --- --- dB
IMD f =30 MHz VCE = 50 V ICQ=150mA --- --- -30 dBc
η
ηη
ηC f =30 MHz VCE = 50 V ICQ=150mA 40 --- --- %
COB f = 1 MHz VCB = 50 V --- --- 390 pF
Conditions f1= 30.000 MHz f2 = 30.001 MHz
053-7052 Rev - 10-2002
MS1079
TYPICAL PERFORMANCE
TYPICAL PERFORMANCE TYPICAL PERFORMANCE
TYPICAL PERFORMANCE
053-7052 Rev - 10-2002
MS1079
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
