A D V A N C E D S E M I C O N D U C T O R, I N C. REV 0
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 60 mA 32 V
BVCES IC = 8.0 mA VBE = 0 V 55 V
IEBO VCE = 2.0 V 500 µA
ICBO VCB = 30 V 500 µA
hFE VCE = 10 V IC = 400 mA 20 200 ---
Cob VCB = 28 V f = 1.0 MHz 10 15
pF
Pout
η
ηη
ηc
VCE = 28 V IC = 400 mA f = 400 MHz
PIN = 0.63 W 7.9
55 10.7
65 W
%
NPN SILICON RF POWER TRANSISTOR
2SC2893
DESCRIPTION:
The ASI 2SC2893 is Designed f or
use in UHF amplif ier s up t o 400 MHz.
FEATURES:
• POUT = 10.7 W Typical at 400 MHz
•
••
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC 1.5 A
VCB 55 V
VCE 32 V
VEB 3.0 V
PDISS 22 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 8.0 °C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / m m
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / m m
H.245 / 6.22 .255 / 6.48
DIM
1 .0 1 0 / 25 .6 5 1 .0 5 5 / 26 .8 0
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
KH
F
E
D C
B
45 ° A
#8-32 U NC
I
J
E
E
B
C
