MSCXXXX.PDF 08-19-02
MSC1350M
DESCRIPTION:DESCRIPTION:
THE MSC1350M IS A SILICON NPN BIPOLAR DEVICE
SPECIFICALLY DESIGNED FOR IFF AVIONICS APPLICATIONS.
GOLD METALLIZATION AND EMITTER BALLASTING ASSURE
HIGH RELIABILITY UNDER CLASS A LINEAR AMPLIFIER
OPERATION. THE DEVICE IS CAPABLE OF WITHSTANDING
A 20:1 VSWR AT ALL PHASE ANGLES UNDER FULL LOAD
CONDITIONS.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCC Collector-Supply Voltage*55 V
ICDevice Current*19.8 A
PDISS Power Dissipation*720 W
TJJunction Temperature 200 °°C
TSTG Storage Temperature -65 to +200 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case*0.2 °°C/W
FeaturesFeatures
• 1090 MHz
• COMMON BASE
• GOLD METALLIZATION
• CLASS C OPERATION
• POUT = 350 W MIN. WITH 7.0 dB GAIN
• WITHSTANDS 20:1 VSWR UNDER FULL LOAD
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 08-19-02
MSC1350M
*Applies only to rated RF Amplifier Operation
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 10mA IE = 0mA 65 --- --- V
BVEBO IE = 1mA IC = 0mA 3.5 --- --- V
BVCER IC = 25mA RBE = 10ΩΩ 65 --- --- V
ICES VCE = 50 V --- --- 25 mA
hFE VCE = 5 V IC = 1A 15 --- 120 ---
DYNAMIC DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 1090 MHz PIN = 70W VCC = 50V 350 360 --- W
ηηCf = 1090 MHz PIN = 70W VCC = 50V 40 44 --- %
GPf = 1090 MHz PIN = 70W VCC = 50V 7.0 7.1 --- dB
Condition
s
Pulse Width = 10uS Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN (ΩΩ)ZCL (ΩΩ)
1025 MHz 5.0 + j5.0 7.0 - j2.5
1090 MHz 7.0 + j2.5 7.5 - j2.8
1150 MHz 3.6 + j2.5 6.8 - j2.7
VCC = 50V
PIN = 70W
MSCXXXX.PDF 08-19-02
MSC1350M
PACKAG PACKAGE MECHANICAL DATAE MECHANICAL DATA
