2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features * * * * * * Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to NPN 2N4921, 2N4922, 2N4923 Pb-Free Package is Available* 3.0 A, 40-80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS MAXIMUM RATINGS 4 Rating Symbol Collector - Emitter Voltage 2N4918 2N4919 2N4920 Collector - Base Voltage 2N4918 2N4919 2N4920 Emitter - Base Voltage VCEO VCBO Value Unit Vdc 40 60 80 Vdc 5.0 Vdc IC (Note 2) 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 30 0.24 W W/C TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current-handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. THERMAL CHARACTERISTICS (Note 3) Characteristic Thermal Resistance, Junction-to-Case FRONT VIEW 40 60 80 VEBO Collector Current - Continuous (Note 1) 3 2 1 1 2 3 Symbol Max Unit qJC 4.16 C/W BACK VIEW TO-225 CASE 077 STYLE 1 MARKING DIAGRAM YWW 2N 49xx xx Y WW = 18, 19, 20 = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 3. Recommend use of thermal compound for lowest thermal resistance. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2004 January, 2017 - Rev. 12 1 Publication Order Number: 2N4918/D 2N4918 - 2N4920 Series IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 - - - - - - 0.5 0.5 0.5 - - 0.1 0.5 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, IB = 0) 2N4918 2N4919 2N4920 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N4918 2N4919 2N4920 VCEO(sus) ICEO Vdc mAdc Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C ICEX mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO - 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 1.0 mAdc 40 30 10 - 150 - ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) - 0.6 Vdc Base-Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) - 1.3 Vdc Base-Emitter On Voltage (Note 4) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) - 1.3 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob - 100 pF Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 - - 4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0% ORDERING INFORMATION Package Shipping 2N4918 TO-225 500 Unit / Bulk 2N4919 TO-225 500 Unit / Bulk 2N4920 TO-225 500 Unit / Bulk TO-225 (Pb-Free) 500 Unit / Bulk Device 2N4920G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 2N4918 - 2N4920 Series PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating VBE(off) 5.0 0 APPROX -11 V VCC Vin t1 RC t2 Vin RB APPROX -11 V 0 t1 < 15 ns 100 < t2 < 500 ms t3 < 15 ns t3 TURN-OFF PULSE IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C 2.0 SCOPE Cjd<<Ceb APPROX 9.0 V VCC = 30 V IC/IB = 20 3.0 t, TIME (s) Vin +4.0 V RB and RC varied to obtain desired current levels 1.0 0.7 0.5 tr VCC = 60 V 0.3 0.2 0.1 0.07 0.05 DUTY CYCLE 2.0% VCC = 30 V td VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 Figure 2. Switching Time Equivalent Test Circuit 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time www.onsemi.com 3 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4918 - 2N4920 Series 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) qJC(t) = r(t) qJC qJC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 100 ms 1.0 ms 5.0 ms 5.0 TJ = 150C 2.0 dc 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25C 0.5 PULSE CURVES APPLY BELOW RATED VCEO 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 5.0 5.0 IC/IB = 20 3.0 1.0 IC/IB = 10 0.7 0.5 ts = ts - 1/8 tf 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 2.0 t f , FALL TIME (s) t s, STORAGE TIME (s) 3.0 2.0 TJ = 25C TJ = 150C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 500 700 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time Figure 6. Storage Time www.onsemi.com 4 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 500 700 1000 2N4918 - 2N4920 Series hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL DC CHARACTERISTICS VCE = 1.0 V TJ = 150C 300 200 25C 100 70 50 -55C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 IC = 0.1 A 1.0 A TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 100 50 200 Figure 9. Collector Saturation Region 108 1.5 VCE = 30 V IC = 10 ICES 107 1.2 106 VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.5 A 0.6 Figure 8. Current Gain IC ICES 105 IC = 2x ICES ICES VALUES OBTAINED FROM FIGURE 13 104 TJ = 25C 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 103 0 30 60 90 120 0 2.0 3.0 5.0 150 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 102 +2.5 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT (A) 0.25 A 0.8 101 TJ = 150C 100 10-1 100C 10-2 IC = ICES VCE = 30 V 104 REVERSE 103 -0.2 -0.1 25C FORWARD 0 +0.1 +0.2 +0.3 +0.4 +2.0 *APPLIES FOR IC/IB < +1.5 +1.0 TJ = 100C to 150C +0.5 *qVC FOR VCE(sat) 0 TJ = -55C to +100C -0.5 -1.0 -1.5 qVB FOR VBE -2.0 -2.5 2.0 3.0 5.0 +0.5 hFE@VCE + 1.0V 2 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients www.onsemi.com 5 2N4918 - 2N4920 Series PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE AD E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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