HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6808
Issued Date : 1998.02.01
Revised Date : 2002. 10.24
Page No. : 1/3
HBCW65C HS MC Product Specification
HBCW65C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBCW65C is a general purpose transistor.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temper atur e............................................................................................ -65 ~ +150 °C
Junction Temper ature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 32 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 800 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=10uA
BVCEO 32 - - V IC=10mA
BVEBO 5 - - V IE=10uA
ICBO - - 20 nA VCB=32V, IE=0
IEBO - - 20 nA VEB=4V, IC=0
*VCE(sat)1 - - 700 mV IC=500mA, IB=50mA
*VCE(sat)2 - - 300 mV IC=100mA, IB=10mA
*VBE(sat) - - 2.0 V IC=500mA, IB=50mA
*hFE1 80 - - VCE=10V, IC=100uA
*hFE2 180 - - VCE=1V, IC=10mA
*hFE3 250 - 630 VCE=1V, IC=100mA
*hFE4 100 - - VCE=2V, IC=500mA
fT - 170 - MHz VCE=10V, IC=20mA, f=100MHz
Cob - 8 - pF VCB=10V, f=1.0MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23