SGP30N60 - Infineon Technologies

SGP30N60

SGW30N60

1 Rev. 2.3 Sep. 07

Fast IGBT in NPT-technology

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE I

C VCE(sat) Tj Marking Package

SGP30N60 600V 30A 2.5V

150°C G30N60 PG-TO-220-3-1

SGW30N60 600V 30A 2.5V

150°C G30N60 PG-TO-247-3-21

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCE 600 V

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax ICpuls 112

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

- 112

Gate-emitter voltage VGE ±20 V

Avalanche energy, single pulse

IC = 30 A, VCC = 50 V, RGE = 25 Ω,

start at Tj = 25°C

EAS 165 mJ

Short circuit withstand time2

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

tSC 10 µs

Power dissipation

TC = 25°C

Ptot 250 W

Operating junction and storage temperature Tj , Tstg -55...+150

Soldering temperature,

wavesoldering, 1.6mm (0.063 in.) from case for 10s

Ts 260

°C

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

PG-TO-220-3-1 PG-TO-247-3-21

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SGP30N60

SGW30N60

2 Rev. 2.3 Sep. 07

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC 0.5 K/W

Thermal resistance,

junction – ambient

RthJA PG-TO-220-3-1

PG-TO-247-3-21

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions

min. Typ. max.

Unit

Static Characteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA600 - -

Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=30A

Tj=25°C

Tj=150°C

1.7

2.1

2.5

2.4

3.0

Gate-emitter threshold voltage VGE(th) IC=700µA,VCE=VGE 3 4 5

Zero gate voltage collector current

ICES VCE=600V,VGE=0V

Tj=25°C

Tj=150°C

3000

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V, IC=30A - 20 - S

Dynamic Characteristic

Input capacitance Ciss - 1600 1920

Output capacitance Coss - 150 180

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz - 92 110

Gate charge QGate VCC=480V, IC=30A

VGE=15V

- 140 182 nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE PG-TO-220-3-1

PG-TO-247-3-21

- nH

Short circuit collector current2) IC(SC) VGE=15V,tSC≤10µs

VCC ≤ 600V,

Tj ≤ 150°C

- 300 - A

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

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SGP30N60

SGW30N60

3 Rev. 2.3 Sep. 07

Switching Characteristic, Inductive Load, at Tj=25 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time td(on) - 44 53

Rise time tr - 34 40

Turn-off delay time td(off) - 291 349

Fall time tf - 58 70

Turn-on energy Eon - 0.64 0.77

Turn-off energy Eoff - 0.65 0.85

Total switching energy Ets

Tj=25°C,

VCC=400V,IC=30A,

VGE=0/15V,

RG=11Ω,

1) =180nH,

1) =900pF

Energy losses include

“tail” and diode

reverse recovery. - 1.29 1.62

Switching Characteristic, Inductive Load, at Tj=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time td(on) - 44 53

Rise time tr - 34 40

Turn-off delay time td(off) - 324 389

Fall time tf - 67 80

Turn-on energy Eon - 0.98 1.18

Turn-off energy Eoff - 0.92 1.19

Total switching energy Ets

Tj=150°C

VCC=400V,IC=30A,

VGE=0/15V,

RG= 11Ω,

1) =180nH,

1) =900pF

Energy losses include

“tail” and diode

reverse recovery. - 1.90 2.38

1) Leakage inductance L

and Stray capacity Cσ due to dynamic test circuit in Figure E.

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SGP30N60

SGW30N60

4 Rev. 2.3 Sep. 07

IC, COLLECTOR CURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

20A

40A

60A

80A

100A

120A

140A

160A

TC=110°C

TC=80°C

IC, COLLECTOR CURRENT

1V 10V 100V 1000V

0.1A

10A

100A

1ms

200µs

50µs

15µs

tp=4µs

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 11Ω)

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

Ptot, POWER DISSIPATION

25°C 50°C 75°C 100°C 125°C

50W

100W

150W

200W

250W

300W

IC, COLLECTOR CURRENT

25°C 50°C 75°C 100°C 125°C

10A

20A

30A

40A

50A

60A

Limited by bond wire

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

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SGP30N60

SGW30N60

5 Rev. 2.3 Sep. 07

IC, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V

10A

20A

30A

40A

50A

60A

70A

80A

90A

15V

13V

11V

VGE=20V

IC, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V

10A

20A

30A

40A

50A

60A

70A

80A

90A

15V

13V

11V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(Tj = 25°C)

Figure 6. Typical output characteristics

(Tj = 150°C)

IC, COLLECTOR CURRENT

0V 2V 4V 6V 8V 10V

10A

20A

30A

40A

50A

60A

70A

80A

90A

100A

-55°C

+150°C

Tj=+25°C

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

-50°C 0°C 50°C 100°C 150°C

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

(VCE = 10V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(VGE = 15V)

IC = 30A

IC = 60A

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SGP30N60

SGW30N60

6 Rev. 2.3 Sep. 07

t, SWITCHING TIMES

10A 20A 30A 40A 50A 60A

10ns

100ns

1000ns

td(on)

td(off)

t, SWITCHING TIMES

0Ω10Ω20Ω30Ω40Ω

10ns

100ns

1000ns

td(on)

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 11Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 30A,

Dynamic test circuit in Figure E)

t, SWITCHING TIMES

0°C 50°C 100°C 150°C

10ns

100ns

1000ns

td(on)

td(off)

VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

-50°C 0°C 50°C 100°C 150°C

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

5.5V

typ.

min.

max.

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 30A, RG = 11Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.7mA)

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SGP30N60

SGW30N60

7 Rev. 2.3 Sep. 07

E, SWITCHING ENERGY LOSSES

10A 20A 30A 40A 50A 60A 70A

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

3.5mJ

4.0mJ

4.5mJ

5.0mJ

Eon*

Eoff

Ets*

E, SWITCHING ENERGY LOSSES

0Ω10Ω20Ω30Ω40Ω

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

3.5mJ

4.0mJ

Ets*

Eon*

Eoff

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 11Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 30A,

Dynamic test circuit in Figure E)

E, SWITCHING ENERGY LOSSES

0°C 50°C 100°C 150°C

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

Ets*

Eon*

Eoff

ZthJC, TRANSIENT THERMAL IMPEDANCE

1µs 10µs 100µs 1ms 10ms 100ms 1s

10-4K/W

10-3K/W

10-2K/W

10-1K/W

100K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 30A, RG = 11Ω,

Dynamic test circuit in Figure E)

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

C1=

1/R1

R1R2

C2=

2/R2

R,(1/W)

, (s)

0.3681 0.0555

0.0938 1.26*10-3

0.0380 1.49*10-4

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SGP30N60

SGW30N60

8 Rev. 2.3 Sep. 07

VGE, GATE-EMITTER VOLTAGE

0nC 50nC 100nC 150nC 200nC

10V

15V

20V

25V

480V

120V

C, CAPACITANCE

0V 10V 20V 30V

10pF

100pF

1nF

Crss

Coss

Ciss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC = 30A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

tsc, SHORT CIRCUIT WITHSTAND TIME

10V 11V 12V 13V 14V 15V

0µs

5µs

10µs

15µs

20µs

IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

10V 12V 14V 16V 18V 20V

50A

100A

150A

200A

250A

300A

350A

400A

450A

500A

VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

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SGP30N60

SGW30N60

9 Rev. 2.3 Sep. 07

PG-TO-220-3-1

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SGP30N60

SGW30N60

10 Rev. 2.3 Sep. 07

PG-TO247-3-21

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SGP30N60

SGW30N60

11 Rev. 2.3 Sep. 07

Figure A. Definition of switching times

Figure B. Definition of switching losses

p(t)

12 n

T(t)

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L

=180nH

and Stray capacity Cσ =900pF.

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SGP30N60

SGW30N60

12 Rev. 2.3 Sep. 07

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

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