For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
1
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
General Description
Features
Functional Diagram
Differential SPDT Functionality
Low Insertion Loss: 0.8 dB
High IP3: +50 dBm
High Input P1dB: +35 dBm
Positive Control: 0/+3V to 0/+5V
24 Lead 4x4 mm QFN Package: 16 mm²
Electrical Specications,
TA = +25° C, Vctl = 0/+3 Vdc (Unless Otherwise Stated), 50 Ohm System
Typical Applications
The HMC922LP4E is ideal for:
• Test & Measurement Equipment
• Antenna Diversity & Selector Selection
• Broadband Switch Matrices
• Military, EW & ECM
• SATCOM & Space
The HMC922LP4E is a DC to 4 GHz high isolation
GaAs MMIC non-reective Differential SPDT switch
in a low cost leadless surface mount package. The
switch is ideal for antenna diversity & selector selec-
tion, broadband switch matrices, test & measurement
equipment, military and space applications yielding
up to 60 dB isolation, low 0.8 dB insertion loss and
+50 dBm input IP3. Power handling is excellent with
the switch offering a P1dB compression point of
+35 dBm. On-chip circuitry allows two positive voltage
controls of 0/+3V to 0/+5V at very low DC currents.
Parameter Frequency Min. Typ. Max. Units
Insertion Loss DC - 2.0 GHz
2.0 - 4.0 GHz
0.8
1.2
1.2
1.5
dB
dB
Isolation: State 1: RFCN-RF2P, RFCN-RF2N, RFCP-RF2N, RFCP-RF2P
State 2: RFCN-RF1P, RFCN-RF1N, RFCP-RF1N, RFCP-RF1P
DC - 2.0 GHz
2.0 - 4.0 GHz
45
40
60
45
dB
dB
Isolation State 1: RFCN-RF1P, RFCP-RF1N
State 2: RFCN-RF2P, RFCP-RF2N
DC - 2.0 GHz
2.0 - 4.0 GHz
30
20
40
30
dB
dB
Return Loss (On State, Any Port) DC - 2.0 GHz
2.0 - 4.0 GHz
20
15
dB
dB
Input Power for 1 dB Compression Vctl= 0/+3V
Vctl= 0/+5V 0.5 - 4.0 GHz 30
35
dBm
dBm
Input Power for 0.1 dB Compression Vctl= 0/+3V
Vctl= 0/+5V 0.5 - 4.0 GHz 27
32
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
Vctl= 0/+3V
Vctl= 0/+5V 0.5 - 4.0 GHz 50
50
dBm
dBm
Switching Characteristics
tRISE / tFALL (10/90% RF)
tON / tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
15
40
ns
ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
2
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
Return Loss RFC
Insertion Loss
Isolation State 1
Return Loss RF1, 2
Isolation State 2
Insertion Loss vs. Temperature
-4
-3
-2
-1
0
0123456
RFCN - RF1N
RFCP - RF1P RFCP - RF2P
RFCN - RF2N
INSERTION LOSS (dB)
FREQUENCY (GHz)
-4
-3
-2
-1
0
0123456
+25C
+85C
-40C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
10
0123456
RFCN - RF2P
RFCN - RF2N
RFCP - RF2N
RFCP - RF2P
RFCN - RF1P
RFCP - RF1N
ISOLATION (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
10
0123456
RFCN - RF1P
RFCN - RF1N
RFCP - RF1N
RFCP - RF1P
RFCN - RF2P
RFCP - RF2N
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
RFCN State 1
RFCP State 1
RFCP State 2
RFCN State 2
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0123456
RF1N State 1
RF1P State 1
RF2P State 2
RF2N State 2
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
3
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
Off State Return Loss Input IP3* @ 3V
Input IP3 * @ 5V
Input 0.1dB & 1 dB
Compression Point @ 3V
Input 0.1 dB & 1 dB Compression
Point @ 5V
Input 0.1dB Compression Point
vs. Temperature @ 3V
* Two-tone input power = +7 dBm each tone, 1 MHz spacing.
-40
-30
-20
-10
0
0123456
RF2N State 1
RF2P State 1
RF1P State 2
RF1N State 2
RETURN LOSS (dB)
FREQUENCY (GHz)
20
30
40
50
60
70
012345
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
20
25
30
35
01234
P0.1dB
P1dB
P0.1dB & P1dB (dBm)
FREQUENCY (GHz)
25
30
35
40
01234
P0.1dB
P1dB
P0.1dB & P1dB (dBm)
FREQUENCY (GHz)
20
25
30
35
01234
+25C
+85C
-40C
P0.1dB (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
012345
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
4
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
Control Voltages
Insertion Loss Amplitude Mismatch
State Bias Condition
Low 0 to +0.5 Vdc @ < 1 µA Typ.
High +3.0 to +5.5 Vdc @ 20 µA Typ.
Input 0.1 dB Compression
Point vs. Temperature @ 5V
Insertion Loss Phase Mismatch Group Delay Mismatch
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
25
30
35
40
01234
+25C
+85C
-40C
P0.1dB (dBm)
FREQUENCY (GHz)
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
0123456
IL(RFCP-RF1P) - IL(RFCN-RF1N)
IL(RFCP-RF2P) - IL(RFCN-RF2N)
AMPLITUDE DIFFERENCE (dB)
FREQUENCY (GHz)
-5
-4
-3
-2
-1
0
1
2
3
4
5
0123456
IL(RFCP-RF1P) - IL(RFCN-RF1N)
IL(RFCP-RF2P) - IL(RFCN-RF2N)
PHASE DIFFERENCE (degrees)
FREQUENCY (GHz)
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
0123456
IL(RFCP-RF1P) - IL(RFCN-RF1N)
IL(RFCP-RF2P) - IL(RFCN-RF2N)
GROUP DELAY DIFFERENCE (ns)
FREQUENCY (GHz)
Control Voltage (A, B) -0.5V to 8V DC
RF Input Power
Through Path 3V/5V
Termination Path 3V/5V
32 / 34 dBm
26 dBm
Channel Temperature 150 °C
Thermal Resistance
(channel to package ground paddle)
Through Path
Termination Path
30 °C/W
79 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Truth Table
Control Input Signal Path State
A B RFCP to: RFCN to:
State 1 High Low RF1P RF1N
State 2 Low High RF2P RF2N
Do not operate continuously at RF power input greater
than 1 dB compression and do not hot switch power
levels grater than +27 dBm for control = 0/+3 Vdc, or
+30 dBm for control = 0/+5 Vdc.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
5
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
Pin Descriptions
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15 mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05 mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC922LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H922
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
Pin Number Function Description Interface Schematic
3, 4, 9, 10, 21, 22 RFCP, RFCN, RF1N,
RF1P, RF2N, RF2P
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
1, 6, 7, 12, 13,
18, 19, 24 N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected
to RF/DC ground externally.
2, 5, 8, 11, 14,
17, 20, 23 GND Package bottom has exposed metal paddle that must be
connected to PCB RF ground as well.
16 A See truth and control voltage tables.
15 B See truth and control voltage tables.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SMT
6
HMC922LP4E
v02.0213
GaAs MMIC NON-REFLECTIVE
DIFFERENTIAL SPDT SWITCH, DC - 4 GHz
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown
above. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation circuit board shown above
is available from Hittite upon request.
List of Materials for Evaluation PCB 129570 [1]
Item Description
J1 - J6 PCB Mount SMA RF Connector
J7 - J9 DC Pin
C1 - C6 330 pF Capacitor, 0402 Pkg.
U1 HMC922LP4E SPDT Switch
PCB [2] 129568 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
