MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Ju nction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7044 Rev - 10-2002 Value Unit 0.75 C/W 110 55 4.0 10 233 +200 -65 to +150 V V V A W C C MS1007 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Test Conditions IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0 mA IE = 0mA IC = 1.4A Min. Value Typ. Max. Unit 110 110 55 4.0 ----18 --------------- --------5 5 43.5 V V V V mA mA --- DYNAMIC Symbol POUT Test Conditions Min. Value Typ. Max. Unit f = 30 MHz VCE = 50V ICQ = 100mA 150 --- --- WPEP GP POUT = 150WPEP VCE = 50V ICQ = 100mA 14 --- --- dB IMD POUT = 150WPEP VCE = 50V ICQ = 100mA --- -30 dBc C POUT = 150WPEP VCE = 50V ICQ = 100mA 37 --- --- % f = 1 MHz VCB = 50 V --- --- 220 pf f1 = 30.000MHz f2 = 30.001MHz COB Conditions 053-7044 Rev - 10-2002 MS1007 TYPICAL PERFORMANCE 053-7044 Rev - 10-2002 MS1007 PACKAGE MECHANICAL DATA DATA 053-7044 Rev - 10-2002