Product Specification PE42427 UltraCMOS(R) SPDT RF Switch 5-6000 MHz Product Description Features The PE42427 is a HaRPTM technology-enhanced SPDT RF switch designed to cover a broad range of applications from 5-6000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface and requires no external components. Symmetric SPDT reflective switch pSemi's HaRP technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS(R) process, providing performance superior to GaAs with the economy and integration of conventional CMOS. Low insertion loss 0.23 dB typical @ 100 MHz 0.25 dB typical @ 1000 MHz 0.40 dB typical @ 3000 MHz 0.65 dB typical @ 5000 MHz 0.90 dB typical @ 6000 MHz Low spurious performance of Figure 1. Functional Diagram -163 dBm/Hz Wide supply range of 2.3-5.5V Excellent linearity IIP2 of 105 dBm @ 17 MHz IIP3 of 81 dBm @ 17 MHz High ESD tolerance 4 kV HBM on RF pins to GND 1 kV on all other pins Logic Select (LS) pin provides maximum flexibility of control logic 12-lead 2 x 2 mm QFN package Figure 2. Package Type 12-lead 2 x 2 x 0.55 mm QFN 71-0068 Document No. DOC-81523-2 | www.psemi.com (c)2017, 2019 pSemi Corp. All rights reserved. Page 1 of 16 PE42427 Product Specification Table 1. Electrical Specifications @ +25 C1, VDD = 2.3-5.5V (ZS = ZL = 50 ), unless otherwise specified Parameter Path Condition Min Operational frequency Insertion loss 2 5 RFX-RFC Return loss 2 2nd harmonic 3rd harmonic IMD3 RFX-RFC RFX-RFC RFX-RFC RF-RFC (c)2017 , 2019 pSemi Corp. All rights reserved. Page 2 of 16 MHz 0.25 0.35 dB 1000-2000 MHz 0.30 0.40 dB 2000-3000 MHz 0.40 0.50 dB 3000-4000 MHz 0.50 0.70 dB 0.65 2 dB 2 dB 0.90 dB 0.90 1.25 68 dB 100-1000 MHz 42 44 dB 1000-2000 MHz 33 35 dB 2000-3000 MHz 27 29 dB 3000-4000 MHz 22 24 dB 4000-5000 MHz 18 20 dB 5000-6000 MHz 15 17 dB 5-100 MHz RFX-RFX 6000 100-1000 MHz 5-100 MHz Isolation Unit 0.23 5000-6000 MHz RFX-RFC Max 5-100 MHz 4000-5000 MHz Isolation Typ 61 dB 100-1000 MHz 40 41 dB 1000-2000 MHz 32 33 dB 2000-3000 MHz 26 28 dB 3000-4000 MHz 22 24 dB 4000-5000 MHz 18 20 dB 5000-6000 MHz 15 16 dB 5-100 MHz 33 dB 100-1000 MHz 28 dB 1000-2000 MHz 21 dB 2000-3000 MHz 20 dB 3000-4000 MHz 18 dB 4000-5000 MHz 2 dB 2 16 5000-6000 MHz 13 dB +18 dBm input power, 17-204 MHz -92 dBc +32 dBm output power, 850 / 900 MHz -99 dBc +32 dBm output power, 1800 / 1900 MHz -101 dBc +18 dBm input power, 17-204 MHz -125 dBc +32 dBm output power, 850 / 900 MHz -93 dBc +32 dBm output power, 1800 / 1900 MHz -87 dBc Bands I, II, V, VIII +17 dBm CW @ TX freq at RFC, -15 dBm CW @ 2Tx-Rx at RFC, 50 -115 dBm Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Table 1. Electrical Specifications @ +25 C1, VDD = 2.3-5.5V (ZS = ZL = 50 ), unless otherwise specified Parameter Path Condition Min Typ Max Unit IIP2 RFX 5 MHz 17 MHz 100-6000 MHz IIP3 RFX 5 MHz 17 MHz 100-6000 MHz 75 81 75 dBm dBm dBm RFX or RFC 5-100 MHz 100-6000 MHz 33 34 dBm dBm 50% CTRL to (10%-90%) or (90%-10%) RF 2 Input 0.1dB compression point3 Switching time Notes: 96 105 115 dBm dBm dBm 4 s 1. Typical performance over temperature and VDD shown in Figure 5 through Figure 21. 2. High frequency performance can be improved by external matching (see Figure 22 through Figure 27 and Figure 30). 3. The input P0.1dB compression point is a linearity figure of merit. Refer to Table 5 for the operating RF input power. Switching Frequency Thermal Data The PE42427 has a maximum 25 kHz switching frequency. Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reached 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. Psi-JT ( JT), junction top-of-package, is a thermal metric to estimate junction temperature of a device on the customer application PCB (JEDEC JESD51 -2). JT = (TJ - TT)/P where Spurious Performance The PE42427 spur fundamental occurs around 13 MHz. Its typical performance is -163 dBm/Hz, with 200 kHz bandwidth. The performance is ideally suited for cable broadband applications. Pin 4 should also be left unconnected for optimal spurious performance. Document No. DOC-81523-2 | www.psemi.com JT = junction-to-top of package characterization parameter, C/W TJ = die junction temperature, C TT = package temperature (top surface, in the center), C P = power dissipated by device, Watts Table 2. Thermal Data for PE42427 Parameter Typ Unit YJT 48 C/W QJA junction-to-ambient thermal resistance 145 C/W (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 16 PE42427 Product Specification Figure 3. Pin Configuration (Top View) Pin 1 dot marking VDD LS V1 12 11 10 Table 5. Operating Ranges Parameter VDD Supply voltage Min Typ Max Unit 2.3 3.3 5.5 V 180 300 A Fig. 4 dBm IDD Power supply current GND 1 RF2 2 GND 3 Exposed Ground Pad 4 5 9 DGND 8 RF1 7 GND Pin Name 1 GND 2 1 RF2 RF port 2 3 GND Ground 4 GND/NC2 Description Ground 3.3 V Control voltage low 0 0 0.5 V -40 +25 +95 C Operating temperature range Max Unit 33 34 dBm dBm ESD voltage HBM2 RF pins to GND All other pins 4000 1000 V V ESD voltage MM, all pins3 200 V +150 C Notes: RF common 6 GND Ground 7 GND Ground 8 1 RF1 9 DGND 10 V1 Switch control input, CMOS logic level 11 LS Logic Select, CMOS logic level 12 VDD Supply Pad GND Min 1 TST Storage temperature Ground or no connect RFC1 -65 1. VDD within operating range specified in Table 5. 2. Human Body Model (MIL_STD 883 Method 3015.7). 3. Machine Model (JEDEC JESD22-A115-A). Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. RF port 1 Digital Ground Exposed pad: ground for proper operation 1. RF pins 2, 5 and 8 must be at 0 VDC. The RF pins do not required DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2. Pin 4 can be grounded or left unconnected externally. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Table 4. Truth Table Path V1 LS RFC-RF2 1 1 RFC-RF1 0 1 RFC-RF1 1 0 RFC-RF2 0 0 (c)2017 , 2019 pSemi Corp. All rights reserved. Page 4 of 16 1.5 RF input power, 50 5-100 MHz 100-6000 MHz 5 Notes: 1.2 Parameter/Condition GND Table 3. Pin Descriptions Pin No. Control voltage high Table 6. Absolute Maximum Ratings 6 GND/NC RFC RFX-RFC input power Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42427 in the 12-lead 2 x 2 x 0.55 mm QFN package is MSL1. Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Figure 4. Power De-rating Curve for 5-6000 MHz Typ. Input P1dB (-40 to +95C, 50 ohm) Max. RF Input power (-40 to +95C, 50 ohm) Typ. Input P1dB (-40 to +95C, 75 ohm) Max. RF Input power (-40 to +95C, 75 ohm) 40 39 38 Input Power (dBm) 37 36 36 dBm 35 34.24 dBm 34 33 32 31 31 dBm 30 29.24 dBm 29 28 27 26 25 5 Document No. DOC-81523-2 | 50 www.psemi.com Frequency (MHz) 500 5000 (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 16 Product Specification PE42427 Typical Performance Data @ +25 C and VDD = 3.3V, unless otherwise specified Figure 5. Insertion Loss RFX* Figure 6. Insertion Loss vs Temp (RF1-RFC)* Figure 8. Insertion Loss vs VDD (RF1-RFC)* Figure 7. Insertion Loss vs Temp (RF2-RFC)* Figure 9. Insertion Loss vs VDD (RF2-RFC)* Note: * High frequency performance can be improved by external matching (see Figure 22 through Figure 27 and Figure 30). (c)2017 , 2019 pSemi Corp. All rights reserved. Page 6 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Typical Performance Data @ +25 C and VDD = 3.3V, unless otherwise specified (cont.) Figure 10. RFX-RFX Isolation vs Temp Figure 12. RFX-RFX Isolation vs VDD Figure 11. RFC-RFX Isolation vs Temp Figure 13. RFC-RFX Isolation vs VDD Document No. DOC-81523-2 | www.psemi.com (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 16 Product Specification PE42427 Typical Performance Data @ +25 C and VDD = 3.3V, unless otherwise specified (cont.) Figure 14. RFC Port Return Loss vs Temp (RF1 Active)* Figure 16. RFC Port Return Loss vs VDD (RF1 Active)* Figure 15. RFC Port Return Loss vs Temp (RF2 Active)* Figure 17. RFC Port Return Loss vs VDD (RF2 Active)* Note: * High frequency performance can be improved by external matching (see Figure 22 through Figure 27 and Figure 30). (c)2017 , 2019 pSemi Corp. All rights reserved. Page 8 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Typical Performance Data @ +25 C and VDD = 3.3V, unless otherwise specified (cont.) Figure 18. Active Port Return Loss vs Temp (RF1 Active)* Figure 20. Active Port Return Loss vs VDD (RF1 Active)* Figure 19. Active Port Return Loss vs Temp (RF2 Active)* Figure 21. Active Port Return Loss vs VDD (RF2 Active)* Note: * High frequency performance can be improved by external matching (see Figure 22 through Figure 27 and Figure 30). Document No. DOC-81523-2 | www.psemi.com (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 16 Product Specification PE42427 Performance Comparison @ +25 C and VDD = 3.3V, with or without matching Figure 22. Insertion Loss RF1* Figure 25. Insertion Loss RF2* Figure 23. Active Port Return Loss (RF1 Active)* Figure 26. Active Port Return Loss (RF2 Active)* Figure 24. RFC Port Return Loss (RF1 Active)* Figure 27. RFC Port Return Loss (RF2 Active)* Note: * High frequency performance can be improved by external matching (see Figure 22 through Figure 27 and Figure 30). (c)2017 , 2019 pSemi Corp. All rights reserved. Page 10 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Evaluation Board Figure 28. Evaluation Board Layout The SPDT switch evaluation board was designed to ease customer evaluation of pSemi's PE42427. The RF common port is connected through a 50 transmission line via the top SMA connector, J2. RF1 and RF2 ports are connected through 50 transmission lines via SMA connectors J1 and J3, respectively. A through 50 transmission is available via SMA connectors J4 and J5. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. J8 provides DC and digital inputs to the device. The board is constructed of a four metal layer material with a total thickness of 62 mils. The top and bottom RF layers are Rogers RO4350 material with a 10 mil RF core. The middle layers provide ground for the transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 22 mils, trace gaps of 7 mils, and metal thickness of 2.1 mils. PRT-29005 Document No. DOC-81523-2 | www.psemi.com (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 11 of 16 Product Specification PE42427 Figure 29. Evaluation Board Schematic (c)2017 , 2019 pSemi Corp. All rights reserved. Page 12 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Figure 30. Evaluation Board Schematic with Matching Document No. DOC-81523-2 | www.psemi.com (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 13 of 16 Product Specification PE42427 Figure 31. Package Drawing 12-lead 2 x 2 x 0.55 mm QFN 12L_2x2x0-55_QFN_DOC-01882-3 (c)2017 , 2019 pSemi Corp. All rights reserved. Page 14 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions PE42427 Product Specification Figure 32. Top Marking Specifications PPZZ YYWW Marking Spec Symbol Package Marking PP EL ZZ 00-99 Last two digits of lot code YY 00-99 Last two digits of assembly year (Ex: 15 for 2015) WW 01-53 Work week Definition Part number marking for PE42427 DOC-66046 Document No. DOC-81523-2 | www.psemi.com (c)2017 , 2019 Peregrine Semiconductor Corp. All rights reserved. Page 15 of 16 Product Specification PE42427 Figure 33. Tape and Reel Specifications 12-lead 2 x 2 x 0.55 mm QFN Tape Feed Direction Nominal Tolerance Ao 2.20 0.1 Bo 2.20 0.1 Ko 0.75 0.1 F 3.50 0.05 P1 4.00 0.1 W 8.00 0.3 Pin 1 Top of Device Device Orientation in Tape Table 6. Ordering Information Order Code Description Package Shipping Method PE42427A-Z PE42427 SPDT RF switch Green 12-lead 2 x 2mm QFN 3000 units T/R EK42427-01 PE42427 Evaluation board Evaluation kit 1/Box Sales Contact and Information For sales and contact information please visit www.psemi.com. (c)2017 , 2019 pSemi Corp. All rights reserved. Page 16 of 16 Document No. DOC-81523-2 | UltraCMOS(R) RFIC Solutions