SAMSUNG ELECTRONICS INC B7E D MM 796442 0017299 5235 MSMNGK IRF730/731/732/733 N-CHANNEL IRFP330/331/332/333 POWER MOSFETS FEATURES ono Lower Ros (on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability IRF730/731/732/733 TO-3P PRODUCT SUMMARY Part Number Vps__| Rosjon) lo IRF7 30/IRFP330 400V 1.00 5.54 IRF731/RFP331 Vv 1.00 . | 3 350 9 5.5A IRFP330/331 /332/333 lnF7a2nAFP3s2 400V 1.52 4.54 |RF7sonRFPSSs 350V 1.52 4.54 MAXIMUM RATINGS IRF730 IRF731 IRF732 IRF733 Characteristics Symbol | ipeps3o | IRFP331 | IRFP332 | IRFP333 | Unit Drain-Source Voltage (1) Voss 400 350 400 350 Vde Drain-Gate Voltage (Ras=1.0M0)(1) Voce 400 350 400 350 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ib 6.5 5.5 4.5 4.56 Adc Continuous Drain Current Tc= 100C Ib 3.5 3.5 3.0 3.0 Adc Drain CurrentPulsed (3) lpm 32 32 18 18 Adc Gate CurrentPulsed Iam 1.65 Adc Single Pulsed Avalanche Energy (4) Eas 290 mJ Avalanche Current tas 5.5 A Total Power Dissipation @ Tc =25C Pp 75 Watts Derate above 25C 0.6 W/C Operating and Storage _ Junction to Case Ty, Tstg 55 to 150 G Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Tt $00 c Notes: (1) Tu=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature (4) L=17 mH, Vag=50V, Re=250, Starting T= 25C & SAMSUNG 192IRF730/731/732/733 IRFP330/331/332/333 SAMSUNG ELECTRONICS INC ELECTRICAL CHARACTERISTICS (1-=25 unless otherwise specified) b?E D N-CHANNEL POWER MOSFETS Me 7964142 0017300 O75 MSMGK Symbol Characteristic Min| Typ | Max /|Units Test Conditions Drain-Source Breakdown Voltage BV IRF730/IRFP330 400) - V_ | Vas=0V OSS | IRF732/IRFP332 Ip=250uA IRF731/IRFP331 IRF733/IRFP333 360) | | Vesith) | Gate Threshold Voltage 2.0| | 4.0 V_ | Vps=Ves, Ip=250pA lass | Gate-Source Leakage Forward | | 100 | nA | Ves=20V T lass | Gate-Source Leakage Reverse | |-100] nA | Ves=-20V pss | Ze" Gate Voltage | | 250 | uA | Vos=Max. Rating, Vas=OV Drain Current | [1000] pA | Vps=Max. RatingX0.8, Ves=OV, To= 125C On-State Drain-Source Current (2) (RF730/IRFP330 6.5| _ A I 28.2V, Vas=10V Dien) | RE731/IRFP331 Vos? 8s IRF7SZ2/ARFP3S2 45| _ A IRF733/IRFP333 Static Drain-Source On-State Resistance (2) Rpswon) | IRF730ARFP330 |0.8]| 1.0 2 | Ves=10V, Ip=3.0A IRF731/IRFP331 IRF732/IRFP332 lrol 165 2 IRF733ARFP333 ts Forward Transconductance (2) 2.9/4.4) UD | Vos250V, Ip=3.0A Ciss Input Capacitance |780| pF Coss | Output Capacitance | 99 pF | Vas=OV, Vos=25V, f=1.0MHz Crss_| Reverse Transfer Capacitance | 43 _- pF t Turn-On Delay Time |11 17 ns don) y Vop=0.5BVnss, Ip=5.5A, Zo=120 tr Rise Time | 19] 29 | nS | (MOSFET switching times are essentially tary | Turn-Off Delay Time | 371 56 ns_ | independent of operating temperature) tt Fall Time | 16 24 ns Total Gate Charge |1 30 iC Qq (Gate-Source Plus Gate-Drain} 8 n Vas=10V, ip=5.5A, Vos=0.8 Max. Rating Qgs_ | Gate-Source Charge |ao|] nc (Gate charge is essentially independent of operating temperature.} Qga_ | Gate-Drain (Miller) Charge | 14 - nc THERMAL RESISTANCE Symbol Characteristic IRF730-3 IRFP330-3 Unit Rinuc Junction-to-Case MAX 1.67 1.67 K/W . Mounting surface flat, -to-Sink TYP 0.50 24 K/W Rines Case-to-Sin 9 smooth, and greased Rthua Junction-to-Ambient MAX 80 40 K/W Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycie<2% (3) Repetitive rating: Puise width limited by max. junction temperature SAMSUNG 193IRF730/731/732/733 N-CHANNEL IRFP330/331/332/333 POWER MOSFETS SAMSUNG ELECTRONICS INC b7E D MM 796442 0017301 TOL MSMGK SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max (Units Test Conditions Continuous Source Current (Body Diode) Is IRF7 30/ARFP330 //] 65 A IRF731/IRFP334 IRF732/IRFP332 IRF733/IRFP333 Modified MOSFET symbol & G showing the integral Pulse Source Current(Body Diode)(3) : , os reverse P-N junction rectifier Isa IRF7 30/IRFP330/IRF330 -|i- 22 A IRF7 31 ARFP331/IRF331 IRF732/IRFP332 IRF733/IRFP333 Diode Forward Voltage (2) Vsp_ | IRF730/IRFP330 -|- |] 1.8 v Tc=25C, Is=5.5A, Vag=OV IRF731/ARFP331 IRF732/IRFP332 IRF7 33/IRFP333 ter Reverse Recovery Time |310| 660 | ns T)=25C, t-=5.5A, dlp/dt=100A/uS Notes: (1) T)=25C to 150C (2) Pulse test: Pulse width<300yus, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature |!161] V | Te=25C, Is=4.5A, Veg=0V 80ys Pulse Test Vas logan Reson) mas wu g x x w 7] 2 a 2 = = < z 5 w iw x x z a 2 > a z z z Zz 4 i 3 3 50 100 150 200 250 300 0 1 2 3 4 8 6 7 Vos, ORAIN-TO-SOUACE VOLTAGE (VOLTS) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics & SANISUNG 194 ElectronicsIRF730/731/732/733 IRFP330/331/332/333 SAMSUNG ELECTRONICS INC 10 80us Pulse Test Ves=10 Ves = 6V Ves=5.5V Ip, DRAIN CURRENT (AMPERES) Ves=4V 0 2 4 Vos, DRAIN-TO-SOURCE VOLTAGE {VOLTS} Typical Saturation Characteristics 0.1 THERMAL THERMAL IMPEOANCE (PER UNIT) a a.02 ZinsctWRthuc, NORMALIZED EFFECTIVE TRANSIENT 10 5 10 2 5 2 b?E 10 D Ip, ORAIN CURRENT (AMPERES) 5 107 N-CHANNEL POWER MOSFETS Mm 7564142 O01730e 146 MESNGK 107 OPERATION IN THIS AREA IS LIMITED BY 1.0 5 c=25C T= 180C MAX Pino = 1.67 KAW 2 SINGLE PULSE o4 10 2 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOUARCE VOLTAGE (VOLTS) Maximum Safe Operating Area 1 Duty Factor. B=. te 2 Per Unit Base=Reyc= 1.67 Deg. CW =3. TuweTc= Pom Zinc (th 2 5 107 2 5 1 2 5 11. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration 80us Pulse Test Vas #1 ron % Resyony max gts, TRANSCONDUCTANCE (SIEMENS) 8 2 4 6 Ip, DRAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current lpr, REVERSE DRAIN CURRENT (AMPERES) 0.1 0 1 2 Vsp, SOURCE-TO-ORAIN VOLTAGE (VOLTS} Typical SourceDrain Diode Forward Voltage SAMSUNG 195IRF730/731/732/733 IRFP330/331/332/333 SAMSUNG ELECTRONICS INC 1.25 wy o < e 5 So 115 > z 2 2 2B 105 ae a5 Bg Ea 0.96 Bz } e z g = 0.85 d ao > oO 0.75 -40 0 4c 80 120 160 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 2000 Vos=0 1600 : Ciss=Cas+Cad Cds Crss=Cgd J | c Coss = Cds +298Ca4_ ic Cgs+Cqd 2 =Cds+Cod wt Oo z << e 3 < a < 3 1 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Fess 2 Oys DURATION. INITIAL T,=25C (HEATING EFFECT OF 2 Ops PULSE IS MINIMAL) Rpsjon), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) Q 5 10 1 25 Ip, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Rosjon), ORAIN-TO-SOUACE ON RESISTANCE Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) (NORMALIZED) Ip, DRAIN CURRENT {AMPERES} N-CHANNEL POWER MOSFETS b7E D MM 7964142 0017303 684 MBSNGK 25 2.0 on -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature 40 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 7.5 6.0 4.8 3.0 9 25 50 78 100 4125 150 Tc, CASE TEMPERATURE C) Maximum Drain Current Vs. Case 1emperature & SAMSUNG 196IRF730/731/732/733 N-CHANNEL IRFP330/331/332/333 POWER MOSFETS SAMSUNG ELECTRONICS INC b?7E D MM 7964142 0017304 710 MESNGK 80 70 Pp, POWER DISSIPATION (WATTS) 10 9 20 To. CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve & SAMSUNG 197