October 2011 Doc ID 15210 Rev 4 1/20
20
STF16N65M5, STI16N65M5
STP16N65M5,STU16N65M5,STW16N65M5
N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET
in TO-220FP, I²PAK, TO-220, IPAK, TO-247
Features
■Worldwide best RDS(on)
■Higher VDSS rating
■High dv/dt capability
■Excellent switching performance
■Easy to drive
■100% avalanche tested
Applications
■Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Type VDSS @
TJmax
RDS(on)
max ID
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
710 V < 0.279 Ω12 A
123
123
12
3
TO-247
TO-220FP TO-220
3
2
1
IPAK
123
I²PAK
TAB TA B
TAB
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Table 1. Device summary
Order codes Marking Package Packaging
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
16N65M5
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Tu b e
www.st.com
Contents STF/I/P/U/W16N65M5
2/20 Doc ID 15210 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
STF/I/P/U/W16N65M5 Electrical ratings
Doc ID 15210 Rev 4 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220FP TO-220, I²PAK,
IPAK, TO-247
VDS Drain-source voltage (VGS = 0) 650 V
VGS Gate-source voltage ± 25 V
IDDrain current (continuous) at TC = 25 °C 12 (1)
1. Limited by maximum junction temperature
12 A
IDDrain current (continuous) at TC = 100 °C 7.3 (1) 7.3 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 48 (1) 48 A
PTOT Total dissipation at TC = 25 °C 90 25 W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max) 4A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ
dv/dt (3)
3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500 V
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220FP I²PAK TO-220 IPAK TO-247
Rthj-case
Thermal resistance junction-case
max 51.38°C/W
Rthj-amb
Thermal resistance junction-
ambient max 62.5 100 50 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Electrical characteristics STF/I/P/U/W16N65M5
4/20 Doc ID 15210 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA 650 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 6 A 0.230 0.279 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 -
1250
30
3
-
pF
pF
pF
Co(tr)(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related VDS = 0 to 520 V, VGS = 0
-100-pF
Co(er)(2)
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-30-pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 2 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 6 A,
VGS = 10 V
(see Figure 20)
-
31
8
12
-
nC
nC
nC
STF/I/P/U/W16N65M5 Electrical characteristics
Doc ID 15210 Rev 4 5/20
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
(see Figure 24)
-
25
7
6
8
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -12
48
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 12 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)-
300
3.5
23
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 24)
-
350
4
24
ns
µC
A
Electrical characteristics STF/I/P/U/W16N65M5
6/20 Doc ID 15210 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
Figure 4. Safe operating area for TO-220,
I²PAK, TO-247
Figure 5. Thermal impedance for TO-220,
I²PAK, TO-247
Figure 6. Safe operating area for IPAK Figure 7. Thermal impedance for IPAK
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM08611v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM08610v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM08609v1
STF/I/P/U/W16N65M5 Electrical characteristics
Doc ID 15210 Rev 4 7/20
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance
Figure 12. Output capacitance stored energy Figure 13. Capacitance variations
ID
15
10
5
0
35VGS(V)
(A)
467
20
VDS=10V
89
AM03179v1
BV
DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
I
D
=1mA
AM03187v1
Eoss
6
4
2
0
0100 VDS(V)
(µJ)
400
200 300 500 600
1
3
5
7
AM03312v1
C
1000
100
10
1
0.1 10 VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
AM03183v1
Electrical characteristics STF/I/P/U/W16N65M5
8/20 Doc ID 15210 Rev 4
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized gate threshold voltage
vs temperature
Figure 17. Source-drain diode forward
characteristics
Figure 18. Switching losses vs gate resistance
(1)
1. Eon including reverse recovery of a SiC diode
R
DS(on)
1.7
1.5
1.3
0.5
-50 0T
J
(°C)
(norm)
50 100
0.7
0.9
1.1
2.1
1.9
V
GS
=10V
I
D
=6.5V
AM03185v1
VGS(th)
1.00
0.90
0.80
0.70
-50 0TJ(°C)
(norm)
1.10
50 100
ID=250µA
AM03184v1
V
SD
05I
SD
(A)
(V)
10
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=25°C T
J
=150°C
T
J
=-25°C
AM03186v1
E
60
40
20
0
020 RG(Ω)
(μJ)
10 30
80
100
40
Eon
Eoff
AM10359v1
STF/I/P/U/W16N65M5 Test circuits
Doc ID 15210 Rev 4 9/20
3 Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM05540v1
Id
Vgs
Vds
90%Vds
10%Id
90%Vgson
Tdelay-off
Tfall
Trise
Tcross -over
10%Vds
90%Id
Vgs(I(t))
on
-off
Tfall
Trise
-
))
Concept waveform for Inductive Load Turn-off
Package mechanical data STF/I/P/U/W16N65M5
10/20 Doc ID 15210 Rev 4
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STF/I/P/U/W16N65M5 Package mechanical data
Doc ID 15210 Rev 4 11/20
Figure 25. TO-220FP drawing
Table 8. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STF/I/P/U/W16N65M5
12/20 Doc ID 15210 Rev 4
Figure 26. I²PAK (TO-262) drawing
Table 9. I²PAK (TO-262) mechanical data
DIM.
mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E 10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
0004982_Rev_H
STF/I/P/U/W16N65M5 Package mechanical data
Doc ID 15210 Rev 4 13/20
Table 10. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
Package mechanical data STF/I/P/U/W16N65M5
14/20 Doc ID 15210 Rev 4
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
STF/I/P/U/W16N65M5 Package mechanical data
Doc ID 15210 Rev 4 15/20
Table 11. IPAK (TO-251) mechanical data
DIM.
mm.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.3
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10 o
Package mechanical data STF/I/P/U/W16N65M5
16/20 Doc ID 15210 Rev 4
Figure 28. IPAK (TO-251) drawing
0068771_H AM09214V1
STF/I/P/U/W16N65M5 Package mechanical data
Doc ID 15210 Rev 4 17/20
Table 12. TO-247 mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S5.50
Package mechanical data STF/I/P/U/W16N65M5
18/20 Doc ID 15210 Rev 4
Figure 29. TO-247 drawing
0075325_F
STF/I/P/U/W16N65M5 Revision history
Doc ID 15210 Rev 4 19/20
5 Revision history
Table 13. Document revision history
Date Revision Changes
12-Feb-2009 1 First release.
21-Oct-2010 2
– Document status promoted from preliminary data to datasheet.
– Added new package, mechanical data: I²PAK.
– Removed DPAK, D²PAK packages and mechanical data.
10-Feb-2011 3 Modified RDS(on) value (see Ta bl e 4 and Figure 11).
13-Oct-2011 4
Modified Section 2.1: Electrical characteristics (curves):
–Figure 8, Figure 9, Figure 10, Figure 11, Figure 15 and Figure 16
– Added Figure 18
Updated RDS(on) value in Ta b l e 4
Updated values in Tabl e 6
Minor text changes.
STF/I/P/U/W16N65M5
20/20 Doc ID 15210 Rev 4
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