FAIRCHILD SEMICONDUCTOR ay DE Payesn74 ooezyaa o ff 3469674 FAIRCHILD SEMICONDUCTOR 84D 27488 1N4009/FDLL4009 Ultra High Speed Diodes T.0 3-04 ert pincer FAIRCHILD ereenmen-eur-emenase A Schlumberger Company ; try... .2 ne (MAX) PACKAGES BV, ..35 V (MIN) @ 5 pA 1N4009 DO-35 FDLL4009 LL-34 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures : If you need this device in the Storage Temperature Range 65C to +200C SOT package, an electical Maximum Junction Operating Temperature +176C equivalent is available. See Lead Temperature +260C FDS01200 family Power Dissipation (Note 2) i Maximum Total Power Dissipation at 26C Ambient 500 mW > Linear Power Derating Factor 3.33 mW/C Maximum Voltage and Current WIV Working Inverse Voltage 25V lo Average Rectified Current 100 mA IF Continuous Forward Current 300 mA ig Peak Repetitive Forward Current 400 mA if (surge) Peak Forward Surge Current Pulse Width = 1s T.OA Pulse Width = 1 us 40A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS VE Forward Voltage 1.0 Vv lp = 30 mA Ir Reverse Current 0.1 BA VR = 25 V 100 BA VR = 25V, Ta = 150C BY Breakdown Voltage - 35 Vv IR = 5.0yHA ter Reverse Recovery Time 4.0 ns It = Sp = 10 mA (Note 3) 2.0 ns ip = 10 mA, Vy = BOY, Ry = 1002 Cc Capacitance 4.0 pF VR = 0.f = 1.0 MHz NOTES: 1. These ratings are limiting values above which the servicsability of the diode may be impaired. 2. These are steady state limits The factory should be consulted on applications involving pulsed or tow duty-cycle operation. 3. Recovery lo 1.0 mA. 4. For product tamily characteristic curves, refer to Chapter 4, 04 a 3-208 -FAIRCHILD SEMICONDUCTOR ft t in FAIRCHILD BEE A Schlumberger Company a4 DE Bauesu74 ooz74as 2 ff. 3469674 FAIRCHILD SEMICONDUCTOR 84D 27489 Dy -N/FDLL4151/4152 1N/FDLL4153/4154 - High Speed Diodes ToO3-% C...4 pF (MAX) : try... 2 nS (MAX) @ 10 mA, 6 V, 100 2. ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range { Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor Maximum Voltage and Currents Working Inverse Voltage WIV lo IF if Average Rectified Current 65C to +200C +175C +260C 1N4151 50 V 1N4152 30 V Continuous Forward Current Peak Repetitive Forward Current if (surge) Peak Forward Surge Current Pulse Width = 18 Pulse Width = 1 ys 500 mW 3.383 mW/C 1N4153 60 V 1N4154 25 V 100 mA 300 mA 400 mA 1.0A 404A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) PACKAGES 1N4157 DO-35 1N4152 DO-35 1N4153 DO-35 1N4154 DO-35 FDLL4151 LL-34 FDLL4152 LL-34 FDLL4153 LL-34 FDLL4154 LL-34 If you need this device in the SOT package, an electical equivalent is available. See FDSO1200 family. SYMBOL CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS Ve Forward Voltage 1N4154 1.0 Vv If = 30 mA 1N4151 1.0 v tp = 50 mA 1N4152 &1N4153 0.49 0.66 v Ip = 0.1 mA 0.53 0.59 v IF = 0.25 mA 0.59 | 0.67 v Ip = 1.0mA 0.62 | 0.70 Vv Ip = 2.0 mA 0.70 0.81 v ip = 10mA 0.74 0.88 Vv Ip = 20mA Ir Reverse Current 1N4154 0.1 BA VR = 26V 100 BA VR = 25 V, Ta = 160C 1N4153 _ Wateet 0.05 pA VR = 50V 50 HA Vp = 50V, Ta = 150C 1N4 152 0.05 nA VR = 30V 50 pA | VR =30V,Ta = 180C BV Breakdown Voltage 1N4154 35 v IR = 6.0 nA 1N4183 _ atest 75 v Iq = 5.0 pA 1N4162 40 Vv In = 5.0 pA tre Reverse Recovery Time 4.0 ns Ip = 10 mA, Ir = 10 mA (Note 3) 2.0 ns Ip = 10mA Vr = 6.0 V, RL = 1002 Cc Capacitance 4.0 pF VR = 0, f = 1.0 MRz NOTES. 4. The maximum ratings are limiting valuea above which satisfactory partormance may be Impaired. 2. These are steady state limita. The factory should be consulted in applications invotving pulsed or low duty cycta operation. 3. Recovery to 1.0 mA. 4. For product family characteristic curves, refer to Chapter 4, 04. a 3-209| FAIRCHILD SEMICONDUCTOR =~ 84 pe ff ayese74 ooazyaa o 9 1 3469674 FAIRCHILD SEMICONDUCTOR 84D 27491 Dy FAIRCHILD 1N4728 through 1N4752 a Sa 1 W Silicon Zener Diodes T--3 A Schlumberger Company { ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES All Devices DOo-41 Temperatures Storage Temperature Range 65C to +200C Maximum Junction Operating Temperature +200C Lead Temperature +260C Power Dissipation (Note 2) Maximum Total Dissipation at 50C Ambient iW Linear Power Derating Factor (from 50C) 6.67 mW/G Maximum Surge Power (Note 8) 10W ELECTRICAL CHARACTERISTICS (25C Ambient) SYMBOL Vz 2z {27 27K lzK IR VRT 12M iz (surge) | Nominal | Maximum Test Maximum Test Maximum Test Maximum Maximum Zener Zener Current | Zener Knee | Current Reverse Voltage Zener Zener Characteristic Voltage | Impedance Impedance Current Current Surge (Note 4) | (Note 5) (Note 5) @VRT (Note 6) Current @!2T @lzT @lzK (Note 3) UNIT Vv a mA Q mA HA Vv mA mA i IN4728 3.3 10.0 76.0 400 1.0 100 1.0 276 1380 IN4729 3.6 10.0 69.0 400 1.0 100 1.0 262 1260 IN4730 3.9 9.0 64.0 400 1.0 50 1.0 234 1190 IN4731 43 9.0 8.0 400 1.0 10 1.0 217 1070 IN4732 4.7 8.0 53.0 500 1.0 10 1.0 193 970 IN4733 5.1 7.0 49.0 550 1.0 10 1.0 178 890 IN4734 5.6 5.0 45.0 600 1.0 10 2.0 162 810 IN4735 6.2 2.0 41.0 700 1.0 10 3.0 146 730 {N4736 6.8 3.5 37.0 700 1.0 10 4.0 133 660 IN4737 7.6 4.0 34.0 700 0.6 10 .0 121 605 IN4738 8.2 4.56 31.0 700 0.6 10 6.0 110 550 IN4739 9.1 5.0 28.0 700 0.5 10 7.0 100 500 IN4740 10.0 7.0 25.0 700 0.25 10 7.6 91 454 NOTES 1. These ratings are limiting values above which the serviceabilily of the diode may be impaired. 2. These ara ateady state limits. The factory should be consulted on applicationa involving pulsed or law duly-cycle operation 3. Non-recurrent square wave, PW = &.3 ma, suprimposed on Zener test current, lay. 4. Type numbers without suffix have + 10% folerance on nominal Vz. Type numbers with suffix A have +5% tolerance on nominal V2. 5. The Zener impedances Zz and Z27, are danved by superimposing a 60 Hz signal on test currents Izy and Izy, having an RMS value of 10% of ihe d.c. value of ly and Iz, respectively. Maximum Zener Current (17,4) 1a based on the maximum Zener voltage of a 10% tolerance unit. Ve = 1.2 V (max) @ Ip = 200 mA for all types. Non-racurrent square wave, PW = 8.3 ms, Ta = 55C. Non-recurrent aquara wave. PW = 6.3 ma, Ta = 55C For product family characteristic curves. refer to Chapter 4, 014. PareFAIRCHILD SEMICONDUCTOR ay De s4eae74 ooe7us2 2 3469674 FAIRCHILD SEMICONDUCTOR 84D 27492 Dm 1N4728 through 1N4752 Ty -13 ELECTRICAL CHARACTERISTICS (25C Ambient) SYMBOL Vz Zz I2T 22K I2K lp Vat IZM iz (surge) Nominal Maximum Test Maximum Test Maximum Test Maximum Maximum Zener Zener Current | Zener Knee | Current Reverse Voltage Zener Zener Characteristic Voltage | Impedance impedance Current Current Surge (Note 4) (Note 5) (Note 5) @VRT (Note 6) Current @'zT @lzt @'zk (Note 3) UNIT Vv 2 mA 2 mA uA Vv mA mA . IN4741 11.0 8.0 23.0 700 0.25 5.0 8.4 83 414 IN4742 12.0 9.0 21.0 700 0.25 5.0 9.1 76 380 IN4743 13.0 10.0 19.0 700 0.25 5.0 9.9 69 344 IN4744 15.0 14.0 17.0 700 0.25 5.0 11.4 61 304 IN4745 16.0 16.0 16.6 700 0.25 5.0 12.2 57 285 IN4746 18.0 20.0 14.0 750 0.25 5.0 13.7 50 250 IN4747 20.0 22.0 12.6 750 0.25 5.0 16.2 45 225 IN4748 22.0 23.0 11.6 750 0.25 5.0 16.7 41 205 IN4749 24.0 25.0 10.5 750 0.25 5.0 18.2 38 190 IN4750 27.0 45.0 9.5 750 0.25 5.0 20.6 34 170 IN4754 30.0 40.0 8.5 1000 0.26 5.0 22.8 30 160 IN4752 33.0 45.0 7.5 4000 0.25 5.0 25.1 27 135 oeFAIRCHILD SEMICONDUCTOR r ce BY oe emanate | ay Def suese74 ooe74sa y 3469674 FAIRCHILD SEMICONDUCTOR 84D 27493 D am 1N5226 through 1N5257 500 mW Silicon Zener. Diodes J~ Wei A Schlumberger Company ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES Temperatures All Devices DO-35 Storage Temperature Range 65C to +200C Maximum Junction Operating Temperature +200S Lead Temperature +260C Power Dissipation (Note 2) Maximum Total Power Dissipation at 75C Ambient 500 mW Linear Power Derating Factor (from 75C) 4.0 mW/C Maximum Surge Power (Note 3) 10 W ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL Vz 2z \zT 22K IR VRT TC Nominal | Maximum] Test Maximum Maximum Reverse Teast Voltage Maximum Characteristic | Zener Zener | Current | Zener Knee Current @ VRT Temperature Voltage [Impedance Impedance Coefficient (Note 4)| (Note 5) (Note 5) @ +20% 10, 5,2, 1%} +20, 10% +5, 2, 1% of Vz @lzT @lzT IzK = 0.25 mA| VzTolerance | VzTolerance | VzTolerance |VzTolerance | (Note 6) UNIT Vv 2 mA 2 BA BA Vv Vv %1C IN5226 3.3 28 20 1600 400 25 0.956 10 -0,070 IN5227 3.6 24 20 1700 100 15 0.95 1.0 ~0.065 IN5228 3.9 23 20 1900 75 10 0.95 1.0 0.060 IN5229 4.3 22 20 2000 50 5.0 0.95 1.0 +0,055 IN5230 47 13 20 1800 50 5.0 1.9 2.0 +0.030 IN5231 5.1 17 20 1600 50 6.0 1.9 2.0 0,030 IN5232 5.6 WW 20 1600 50 6.0 2.9 3.0 +0.038 IN5233 6.0 7.0 20 1600 50 5.0 3.3 3.5 +0.038 iN65234 6.2 7.0 20 1000 60 5.0 3.8 4.0 +0.045 IN5235 6.8 5.0 20 750 30 3.0 4.8 5.0 +0,050 IN5236 7.6 6.0 20 500 30 3.0 .7 6.0 +0.058 IN6237 8.2 8.0 20 500 30 3.0 6.2 6.6 +0.062 IN5238 8.7 8.0 20 600 30 3.0 6.2 6.6 +0.065 iN65239 9.4 10 20 600 30 3.0 6.7 7.0 +0.068 IN5240 10.0 17 20 600 30 3.0 7.6 8.0 +0.075 IN5241 11.0 22 20 6c0 30 2.0 8.0 8.4 +0.076 NOTES: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are ateady state fimits. The factory should be consulted on applications involving pulsed or low duty-cycle Operation, 3. Non-recurrent square wave, PW = 8.9 ma. Tg = 65C. 4, Type aumbers without suffix hava + 20% tolerance on nominal V2. Type numbers with suffix A have + 10% tolerance on nominal Vz- Type numbers with suffix B have + 5% toterance on nominal V2- Type numbers wilh sulfix C have + 2% tolerance on nominal Vz. Type numbers with suffix D have = 1% tolerance on nominal Vz. - The Zener impedances Z7 and Z7, are derived by superimposing @ 60 Hy signal on test currents Iz7 and IzK: having an AMS value of 10% of the d.c. value of Iz7 and I2% respectively, . - Maximum lemperature coefficients apply to 10, 5, 2 and 1% tolerance types only and are measurad under the following conditions: iN5226A, B, C, D through IN5242A, B, C, D; Iz = 7.5 mA, T, = 25C, T, = 125C, INS242A, B, C, D through IN5257A, B, C, Dz Iz = Izq, T, = 25C, T, = 125C. 7. Ve = 1.1V (maximum) @ fr 200 mA for all types. 8. For product family characteristic curvas, refer to Chapter 4, D13. ao aAir FAIRCHILD SEMICONDUCTOR a4 pe ssese74 ooazyay o 3469674 FAIRCHILD SEMICONDUCTOR 84D 27434 D 1N5226 through 1N5257 i i ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL ~Vz Zz \2T 27K IR VRT Tc Nominal | Maximum | Test Maximum Maximum Reverse Test Voltage Maximum Characteristic | Zener Zener | Current | Zener Knee Current @ VRT Temperature Voltage |Impedance| tmpedance Coefficient {Note 4)| (Note 5) (Note 5) @ + 20% +10, 5, 2, 1%) +20, 10% +5, 2, 1% of Vz @lzt @lzt IzK = 0.26 mA | VzTolerance | VzTolerance | VzTolerance | VzTolerance | (Note 6) UNIT Vv Q mA Q pA BA v v %/C { IN5242 12.0 30 20 600 10 1.0 8.7 9.1 +0.077 IN5243 13.0 13 9.6 600 10 0.6 9.4 9.9 +0.079 IN5244 14.0 16 9.0 600 10 0.1 3.5 10.0 +0.082 IN5245 15.0 16 8.5 600 40 0.1 10.5 11.0 +0.082 IN5246 16.0 17 7.8 600 10 0.1 11.4 12.0 +0.083 IN5247 17.0 19 7.4 600 10 0.1 12.4 13.0 +0,084 IN5248 18.0 21 7.0 600 10 0.1 13.3 14.0 +0.085 IN5249 19.0 23 6.6 600 10 0.4 13.3 14.0 +0.086 IN5250 20.0 25 6.2 600 10 0.1 14.3 15.0 +0,086 IN5251 22.0 23 5.6 800 10 0.1 16.2 17.0 +0.087 IN5252 24.0 33 5.2 600 10 0.1 17.1 18.0 +0.088 IN5253 26.0 35 5.0 600 10 0.1 18.1 19.0 +0.089 INS5254 27.0 41 4.6 600 10 0.1 20.0 21.0 +0.090 IN5255 28.0 44 46 600 10 0.1 20.0 21.0 +0.091 INS5256 30.0 49 4.2 600 10 0.1 22.0 23.0 +0.091 IN5257 33.0 58 3.8 700 10 0.1 24.0 25.0 +0.092FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 1N5282 ace cee epee FAIRCHILD prs re A Schlumberger Company High Conductance Ultra Fast Diodes ay pe Bp sucsezy ooa7uis a | 84D 27495 Dt TOF OF BV...80 V (MIN) @ S.0 ZA C...2.5 pF @ V_ = OV,f = 1.0 MHz : trr...4.0 ns @ It = Ip = 10 mA to 200 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range ee cern Maximum Junction Operating Temperature +175C Lead Temperature +260C Power Dissipation (Note 2) Maximum Totai Dissipation at 25 Ambient 500 mW Linear Derating Factor (from 25C) 3.33 mW/C Maximum Voltage and Currents WIV Working inverse Voltage 55 V lo Average Rectified Current 200 mA IF Continuous Forward Current 300 mA if(surge) Peak Forward Surge Current Pulse Width = 1.08 100A Pulse Width = 1.0 us 4.0A -65C to +200C PACKAGES 1N5282 DO-35 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS Ve Forward Voltage 1.05 1.30 v IF = 500 mA 0.92 1.10 Vv ip = 300 mA 0.80 0.90 v ip = 100 mA 0.67 0.725 v (IF = 10mA 0.55 0.60 Vv Ip = 1.0mA 0.45 0.49 Vv ip = 0.1 mA IR Reverse Current 100 nA VR = 55V 100 BA VR = 55 V, Ta = 150C BV Breakdown Voltage 80 v IR = 5.0 nA ter Reverse Recovery Time (Note 3) 4.0 ns tf = |, = 10 mA to 200 mA Ri = 1009 ter Reverse Recovery Time 2.0 ns if = 10 mA, V, = 6.0 V ter Forward Recovery Time 10 ns ig = 200 mA (Note 4) Vpk Peak Forward Voltage 2.0 Vv le = 500 mA (Note 5) Cc Capacitance 2.5 pF VR = 0.f = 1.0 MHz NOTES. Racovery to 0.1 |. f, = 0.4 ns, Vip = 10 V, pulse width = 100 ns; duty cycle < 1%. t, = 80 ns, pulse width = 1.0 ys; duty cycle < t%. For produc: family characteriatics curves, refer to Chapter 4, 04. anson- The maximum fatings are liriting values above which life or satisfactory partormance may be impaired. . These ara steady-state limits. The factory should be consulted on applications involving pulsed or low duty-ycle operation, a er rr, 3-215_-_-_ FAIRCHILD SEMICONDUCTOR eee FAIRCHILD A Schlumberger Company ay DEB 3469674 oo27500 8 i " 18920/921/922/923 FDLL920/921/922/923 General Purpose Diodes T21-0% Ve... 1.2 (MAX) @ 200 mA IR... 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 26C) Maximum Voltage and Currents 18920 WIV Working Inverse Voitage 50 V (-65C to + 100C) lo Average Forward Current 200 mA ' if Recurent Peak Forward Current 600 mA i If(surge) Peak Forward Surge Current I Pulse Width = 1s 1.0A ' Pulse Width = 1 ys 4.0A 18921 100 V 200 mA 600 mA 10A 4.0A 65C to 3.33 18922 150 V 200 mA 600 mA 1.0A 4.04 +200G +175C +260C 500 mW mW/C 18923 200 V 200 mA 600 mA 1.0A 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature uniess otherwise noted) 1 seretreremmeanmaneepintimreres hin fae 6 PACKAGES 18920 DO-35 18921 DO-35 18922 DO-35 18923 DO-35 FDLL920 LL-34 FDLL921 LL-34 FDLL922 LL-34 FDLL923 LL-34 If you need this device in the SOT package, an electical equivalent is available. See FDSO1400 family. SYMBOL CHARACTERISTIC MIN MAX |" UNITS TEST CONDITIONS Ir Inverse Current 100 nA ~ VR = rated WIV 10 LA Vp = rated WIV, Ta = 100C VE Forward Voltage 1.2 V Ip = OO mA Cc Capacitance 6.5 pF VR = 0,f = 1 MHz Qs Stored Charge 12 nc IF = 10 mA, VR = 10 V NOTES: 1. These ratings are limiting valuea above which the serviceability of any indwiduat semiconductor device may be impairad, 2. These are sleady state limita. The factory should be consulted on epplications involving pulsed or low duty-cycle operation. 3, For product family characterialic curves, refer to Chapter 4, D1.FAIRCHILD SEMICONDUCTOR ay DE Sub aee4 o02750e2 1 J. 3469674 FAIRCHILD SEMICONDUCTOR 84D 27502 Da 2N/MPS/FTSO706 7 3% 23 MPS/FTSO706A NPN High Speed Logic Switches ee ee FAIRCHILD A Schlumberger Company i PACKAGE | Veer ... 20 V (Min) @ 10 mA fire ... 20 (Min) @10mA 2N706 TO-118A 7s... 60 ns (Max) 2N/MPS/FTSO706), 25 ns (Max) MPS706 TO-92 (MPS/FTSO706A) MPS706A TO-92 } : e Complements ... MPS3640 (TO-92) FTSO706 TO-236AA/AB . . FTSO706A TO-236AA/AB i ABSOLUTE MAXIMUM RATINGS (Note 1) i Temperatures 2N MPS/FTSO Storage Temperature ~65 C to 175C -55C to 150C Operating Junction Temperature 175C 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N MPS FTSO 25 C Ambient Temperature 0.3 mW 0,625 W 0.350 W* 25C Case Temperature 1.0 W 1.0W Voltages & Currents 706 706A Vepo Collector to Base Voltage 25V 25V Vcer Collector to Emitter Voltage 20 V 20V (Ree < 10 9) (Note 4) Veso Emitter to Base Voltage 3.0 V 5.0V Electrical Characteristics (25 C Ambient Temperature unless otherwise noted) (Note 6) MPS706 706A SYMBOL |} CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown]| 15 15 Vv Ic = 10 mA, le = 0 Voltage BVcer Collector to Emitter Breakdown| 20 20 Vv Ic = 10 mA, Ree = 100 Voltage BVceo Collector to Base Breakdown 25 25 Vv lc = 10 pA, le =O Voltage leBo Emitter Cutoff Current 10 10 pA Ves = 3.0 V, Ile =O lesbo Collector Cutoff Current 500 500 nA Vecp = 15 V, le = 0 Ree DC Current Gain (Note 5) 20 20 60 lo =10 MA, Voce = 1.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations 3 These ratings give a maximum junction temperature of 175C and junction-to-case thermal resistance of 150 C/W (derating factor of 6.7 mW/C) for 2N706. These ratings give a maximum junction temperature of 150 Cand (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/* C), junction-to-ambient thermal resistance of 200 CAW (derating factor of 5.0 mW/ C) for MPS706 and MPS706A; (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/ G). 4. Rating refers to a high current point where collector to emitter vaitage is lowest. 5. Pulse conditions: tengih < 12 ys; duty cycle = 1% for MPS706, MPS706A; length = 300us; duty cycle = 1% for 2N706. 6 For product tamily characteristtc curves. refer to Curve Set T132 for 2N706; T162 for MPS706 and MPS706A. * Package mounted on 99.5% alumina 86 mm x 8 mm x 0.6 mm.FAIRCHILD SEMICONDUCTOR J &Y DE 3465674 oOe7?503 3 3469674 FAIRCHILD SEMICONDUCTOR 2N/MPS/FTSO706 __ MPS/FTSO706A /-34-.23 84D 27503 OD, ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) MPS706 706A SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX } UNITS TEST CONDITIONS Veetsat Collector to Emitter Saturation 0.6 0.6 Vv lc = 10 mA, Ip = 1.0 mA Voltage (Note 5) Veetsan Base to Emitter Saturation 0.9 0.7 0.9 Vv lo = 10 mA, lp = 1.00mA Voltage (Note 5) Cob Output Capacitance 6.0 6.0 pF Vce = 10 V, le =0, f= 100 kHz te High Frequency Current Gain | 2.0 2.0 Ic = 10 mA, Vce = 15 V, f = 100 MHz ro Base Resistance 50 60 a le = 10 mA, Vce = 15 V, f = 300 MHz Ts Charge Storage Time Constant 60 25 ns Ic = 10 MA, Vcc = 10 V, (test circuit no. 3111) lai =tp2 = 10 mA ton Turn On Time 40 40 ns lo = 10 mA, ta: = 3.0 mA, {test circuit no. 589) Veco = 3.0 V toss Turn Off Time 75 75 ns lc = 10 mA, la; = 3.0 mA, (test circuit no. 589) la2 = 1.5 MA, Vee = 3.0 V 2N706 SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS BVcer Collector to Emitter Breakdown 20 Vv lo = 10 mA, Ree = 10 1 Voltage BVcs0 Collector to Base Breakdown 25 Vv lo = 10 wA, le = 0 Voltage Iceo Collector Cutoff Current 300 nA Vea = 15 V, le =O hee DC Current Gain (Note 5) 20 le = 10 MA, Vee = 1.0 V Vegitsan Collector to Emitter Saturation 0.6 Vv io = 10 mA, lp = 1.0 mA Voltage (Note 5) Veetsat Base to Emitter Saturation 0.6 Vv le = 10 mA, fp = 1.0 mA Voltage (Note 5) Cob Output Capacitance 6.0 pF Vos = 10 V, le = 0, f = 100 kHz Ne High Frequency Current Gain 2.0 Ic = 10 mA, Vce = 15 V, f = 100 MHz Ts Charge Storage Time Constant 60 ns Ic = 10 MA, Veco = 10 V, (test circuit no. 3111) le: = lb2e = 10 mA 3-223